MOC1005
Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •
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E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE110b,
IEC204/
VDE0113,
VDE0160,
VDE0832,
VDE0833,
MOC1005
MOC1006
VQE 24 led
VDE0113
VDE0160
VDE0832
VDE0833
transistor J5X
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ic 1006
Abstract: RN1003 RN1001 RN1002 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design
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RN1001RN1006
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN2001RN2006
RN1001
RN1002
ic 1006
RN1003
RN1006
RN2001
RN2006
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RN1001
Abstract: RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design
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RN1001RN1006
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN2001RN2006
RN1001
RN1002
RN1003
RN1006
RN2001
RN2006
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Untitled
Abstract: No abstract text available
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design
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RN1001RN1006
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN2001
RN2006
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Untitled
Abstract: No abstract text available
Text: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
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CGD1042L
OT115AE
2002/95/EC,
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transistor A 1006
Abstract: TRANSISTOR 100-6 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design
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RN1001
RN1006
RN1002
RN1003
RN1004
RN1005
RN2001
RN2006
transistor A 1006
TRANSISTOR 100-6
RN1003
RN1006
RN2006
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TRANSISTOR 100-6
Abstract: transistor A 1006 RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design
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RN1001RN1006
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN2001
RN2006
RN1001
TRANSISTOR 100-6
transistor A 1006
RN1003
RN1006
RN2006
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transistor A 1006
Abstract: RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN2001 RN2006 22 1006
Text: RN1001~RN1006 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1001,RN1002,RN1003 RN1004,RN1005,RN1006 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design
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RN1001RN1006
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
RN2001
RN2006
RN1001
transistor A 1006
RN1003
RN1006
RN2006
22 1006
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TPC8204
Abstract: No abstract text available
Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8. Low Drain-Source ON Resistance : RßS (ON) = 16
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TPC8204
TPC8204
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sod87 Melf
Abstract: SOD882 1N5817 MELF 1PS74SB43 1PS59SB10 1n5819 melf 1PS76SB62 1PS76SB21 BAS70 MELF SOD532
Text: Schottky diodes Selection guide With over 13% market share in terms of quantity, Philips is among the top five worldwide suppliers of small signal diodes and transistors.We offer a very broad portfolio – from conventional leaded products to the latest ultra-small lead-free
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPCS8102
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HN1L03FU
Abstract: No abstract text available
Text: TOSHIBA HN1L03FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE H N 1 L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Q l, Q2 COMMON • Low Threshold Voltage Q l : V th = 0 .8 -2 .5 V 1.25 ± 0.1 6 P
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HN1L03FU
N1L03FU
HN1L03FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSH T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPCS8101
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : RßS (ON) = 27 mH (Typ.)
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TPC8303
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HN4K03JU
Abstract: S-25
Text: TOSHIBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package
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HN4K03JU
961001EAA1
HN4K03JU
S-25
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tpc8101
Abstract: TPCS8101 tpc81
Text: TOSHIBA TPCS8101 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 01 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TSSOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPCS8101
tpc8101
TPCS8101
tpc81
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Untitled
Abstract: No abstract text available
Text: HN1L03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANAROG SWITCH APPLICATIONS Q l, Q2 COMMON • Low Threshold Voltage Q l : Vth = 0 .8 -2 .5 V Q2 : Vth = - 0 . 5 ~ - l . 5 V
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HN1L03FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance
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TPC8204
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2sd1008
Abstract: 2SD 388 A
Text: SILICON TRANSISTORS 2SD1 006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1006 and 2SD1007 are designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FEATURES • W orld Standard M iniatu re Package : SO T —89
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2SD1007
2SD1007
2SD1007)
2SB805
2SB806
2sd1008
2SD 388 A
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2ssm
Abstract: TPCS8102
Text: TOSHIBA TPCS8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U -M O SÏÏ T P C S 8 1 02 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS
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TPCS8102
2ssm
TPCS8102
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HN1K03FU
Abstract: N1K03
Text: HN1K03FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N 1 K03FU HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. U nit in mm 2.1 ± 0.1 1.25 ± 0.1 • High Input Impedance 6 P • Low Gate Threshold Voltage Vth = 0 .5 - 1 .5 V
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HN1K03FU
N1K03FU
HN1K03FU
N1K03
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Untitled
Abstract: No abstract text available
Text: EC3H07B NPN Epitaxial Planar Type Silicon Transistor For VHF band low-noise Amp and Oscillation Preliminary specifications TENTATIVE Features and applications • Low noise : NF=1.5dB typ f=2GHz • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V)
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EC3H07B
10GHz
000214TM2fXHD
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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