sn1027
Abstract: c 1027 transistor LT1798 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290
Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs
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LT1027
16-bit
LT1027
LT1021-5,
REF-02,
LT1236
LT1460
10ppm/
OT-23
LT1461
sn1027
c 1027 transistor
LT1798
LT1021-5
LT1027ACH-5
LT1027BCH-5
LT1027CCH-5
LT1027DCH-5
LTC1290
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lt 864
Abstract: LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290 REF-02 h8 diode zener
Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs
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Original
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LT1027
16-bit
LT1027
LT1021-5,
REF-02,
LT1236
LT1460
10ppm/
OT-23
LT1461
lt 864
LT1021-5
LT1027ACH-5
LT1027BCH-5
LT1027CCH-5
LT1027DCH-5
LTC1290
REF-02
h8 diode zener
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1027c5
Abstract: LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5
Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs
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Original
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LT1027
16-bit
LT1027
LT1021-5,
REF-02,
LT1236
LT1460
10ppm/
OT-23
LT1461
1027c5
LT1798
1027E5
LT1027BCN8-5
LT1021-5
LT1027ACH-5
LT1027BCH-5
LT1027CCH-5
LT1027DCH-5
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Untitled
Abstract: No abstract text available
Text: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs
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Original
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LT1027
16-bit
LT1027
LT1021-5,
REF-02,
LT1236
LT1460
10ppm/Â
OT-23
LT1461
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PDF
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LT1021-5
Abstract: LT1027 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5
Text: LT1027 Precision 5V Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1027 is a precision reference with extra-low drift, superior accuracy, excellent line and load regulation and low output impedance at high frequency. This device is intended for use in 12- to 16-bit A-to-D and D-to-A
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Original
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LT1027
16-bit
LT1027
LT1021-5,
REF-02,
LT1021
LT1236
LT1460
10ppm/
OT-23
LT1021-5
LT1027ACH-5
LT1027BCH-5
LT1027C
LT1027M
LTC1290
REF-02
1027E5
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2N6193U3
Abstract: 2N5339 2N6193 MIL-PRF19500 JANTX 2n6193
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 3 April 2001 INCH-POUND MIL-PRF-19500/561D 3 January 2001 SUPERSEDING MIL-PRF-19500/561C 28 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/561D
MIL-PRF-19500/561C
2N6193
2N6193U3
MIL-PRF-19500
2N5339
MIL-PRF19500
JANTX 2n6193
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PDF
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TRANSISTOR SMD MARKING CODE 451
Abstract: 2N6193 2N5339
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
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MIL-PRF-19500/560E
MIL-PRF-19500/560D
2N5339
2N5339U3
MIL-PRF-19500
TRANSISTOR SMD MARKING CODE 451
2N6193
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PDF
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2N7575
Abstract: diode cc 3053 operation50 2N7576
Text: INCH-POUND MIL-PRF-19500/738 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments
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MIL-PRF-19500/738
2N7575,
2N7576,
2N7577,
MIL-PRF-19500.
O-254AA)
2N7575
diode cc 3053
operation50
2N7576
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PDF
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2N7569
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/734 16 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571 JAN, JANTX, JANTXV AND JANS. This specification is approved for use by all Departments
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MIL-PRF-19500/734
2N7569,
2N7570,
2N7571
MIL-PRF-19500.
2N7569
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PDF
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diode cc 3053
Abstract: JANTX 2N6341 BUT 509D 2N6338 2N6341 2N6437 2N6438 C-48U 509D cc 3053
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 9 January 2009. INCH-POUND MIL-PRF-19500/509D 9 October 2009 SUPERSEDING MIL-PRF-19500/509C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/509D
MIL-PRF-19500/509C
2N6338
2N6341,
MIL-PRF-19500.
diode cc 3053
JANTX 2N6341
BUT 509D
2N6341
2N6437
2N6438
C-48U
509D
cc 3053
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PDF
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diode cc 3053
Abstract: 2N6341 C-48U 2N6338 MIL-PRF19500 3041 v cc 3053
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999. INCH-POUND MIL-PRF-19500/509C 25 July 1999 SUPERSEDING MIL-S-19500/509B 25 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
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Original
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MIL-PRF-19500/509C
MIL-S-19500/509B
2N6338
2N6341
MIL-PRF-19500.
204AA
diode cc 3053
2N6341
C-48U
MIL-PRF19500
3041 v
cc 3053
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PDF
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2N3467
Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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Original
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MIL-PRF-19500/348E
MIL-S-19500/348D
2N3467,
2N3467L,
2N3468,
2N3468L,
MIL-PRF-19500.
2N3467
2N3467L
2N3468
2N3468L
2N3647
2N3648
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PDF
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ze 003 ic
Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
Text: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •
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2SB1018A
2SD1411A
ze 003 ic
c 1027 transistor
2SB1018A
2SD1411A
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
TV-2000
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PDF
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2SD1409A
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)
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2SD1409A
2SD1409A
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PDF
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2sC5200, 2SA1943
Abstract: 2SA1943 2sa1943 amplifier 2-21F1A 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor 2SC5200
Text: 2SA1943 TO SH IBA 2 S A 1 943 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP TRIPLE DIFFUSED TYPE h , • • Complementary to 2SC5200 Recommended for 100 W High Fidelity Audio Frequency Amplifier Output Stage. 20.5MAX. » 7T M A X IM U M RATINGS Ta = 25°C
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2SA1943
2SC5200
2-21F1A
000707EAA2'
2sC5200, 2SA1943
2SA1943
2sa1943 amplifier
power amplifier 2sc5200 2sa1943 TRANSISTOR
2sa1943 transistor 2SC5200
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PDF
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c 1027 transistor
Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Text: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS
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MAX2102
MAX2406
MAX2410
MAX2411A
OT23-5
MAX2632
MAX2633
OT23-6
MAX2662
MAX2690
c 1027 transistor
TRANSISTOR RF 1049
Power-Amplifier
R1075
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PDF
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BD 130 Y transistor
Abstract: No abstract text available
Text: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.
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1000pF
MM1027,
MM1081
5000/div
BD 130 Y transistor
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PDF
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KDS 8 MHZ cq crystal
Abstract: Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report
Text: RC288ACÌ Modem Designer’s Guide 1. INTRODUCTION 1.2. 1.1. SUMMARY • Data modem throughput up to 115.2 kbps - V.34, V.FC, V.32 bis, V.32, V.22 bis, V.22A/B, V.23. and V.21; Bell 212A and 103 - V.42 LAPM and MNP 2-4 error correction - V.42 bis and MNP 5 data compression
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RC288ACÌ
RC288ACi
42/MNP
J22198
KDS 8 MHZ cq crystal
Mcu-02 Ls
allen bradley CC series
xnxx
Non-Volatile RAM
accelerator rockwell modem
XNXXX
KDS crystal 12.000
4 MHz crystal KDS 2K
KDS technical report
|
PDF
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Y parameters of transistors
Abstract: SAMPLING PLAN
Text: Philips Semiconductors Product specification Microwave Transistors General BATCH RELEASE TESTS FOR GRADE “X” AND "Y” EQUIVALENTS Group B; note 1. INSPECTIONS MIL STD 750 METHOD CONDITIONS SAMPLING PLAN LTPD<2> SMALL LOT QUALITY CONFORMANCE INSPECTION
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PDF
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors Darlington Power Transistors ITO-220 TO-220 ITO-3P MTO-3P Bipolar transistors Absolute Maximum Ratings Electrica Characteristics VcEO VcBO VcEO V ebo lc Ib Pi Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [°C] [ ”C ] 2SD1022 100 100 1023
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ITO-220
O-220
2SD1022
2SB1282
|
PDF
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Untitled
Abstract: No abstract text available
Text: Darlington Transistors D a rlin g to n P o w e r T r a n s is to r s Bipolar transistors T ype No. E IA J Absolute Maximum Ratings Electrical Characteristics VCBO VOEO V ebo lo Ib Pt Tstg Tj sus (min) [V ] [V ] [V ] [A ] [A ] [W ] [•c] [•c] [V ] 100
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2SD1022
2SB1282
ITO-220
ITO-220
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PDF
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TH3L10
Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Text: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500
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2SD1022
2SB1282
O-220
TH3L10
3L10Z*
TK3L10
TH5P4
transistor d 1795
417 TRANSISTOR
zener diode 1283
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C
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Q62702-C2354
OT-23
E3SL05
6235b05
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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Q62702-F456
00b743fi
623SbD5
BFT66
flE35bOS
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PDF
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