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    C 1906 TRANSISTOR Search Results

    C 1906 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 1906 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C 1906 transistor

    Abstract: No abstract text available
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 C 1906 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 PDF

    1906

    Abstract: IC 1904 RN1901 RN1902 RN1903 RN1904 RN1905 RN1906 RN2901 RN2906
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 1906 IC 1904 RN1903 RN1906 RN2906 PDF

    RN1901

    Abstract: RN1902 RN1903 RN1904 RN1905 RN1906 RN2901 RN2906
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 RN1903 RN1906 RN2906 PDF

    rn1904 marking

    Abstract: RN1901 RN1902 RN1903 RN1904 RN1905 RN1906 RN2901 RN2906
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 rn1904 marking RN1903 RN1906 RN2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901, RN1902, RN1903 RN1904, RN1905, RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra-super-mini-type with six (6) leads)


    Original     		RN1901 RN1906 RN1901, RN1902, RN1903 RN1904, RN1905, RN2901 RN2906 PDF

    RN1901

    Abstract: RN1902 RN1903 RN1904 RN1905 RN1906 RN2901 RN2906
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 RN1903 RN1906 RN2906 PDF

    RN1901

    Abstract: RN1902 RN1903 RN1904 RN1905 RN1906 RN2901 RN2906
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 RN1903 RN1906 RN2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1901, RN1902, RN1903 RN1904, RN1905, RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1901, RN1902, RN1903 RN1904, RN1905, RN2901 RN2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads)


    Original     		RN1901 RN1906 RN1902 RN1903 RN1904 RN1905 RN2901 RN2906 PDF

    Untitled

    Abstract: No abstract text available
    Text: B07D932BZ2-0354 Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . 6 7 8 9 [10] . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product


    Original     		B07D932BZ2-0354 B07D932BZ2-0354 M5757 M5757/23-038 PDF

    B07D932BZ2-0358

    Abstract: No abstract text available
    Text: B07D932BZ2-0358 Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . [11] 12 13 14 15 . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product


    Original     		B07D932BZ2-0358 B07D932BZ2-0358 M5757 M5757/23-042 PDF

    m5757 relay

    Abstract: No abstract text available
    Text: B07D034BZ2-0357 Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . 16 17 [18] 19 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product


    Original     		B07D034BZ2-0357 B07D034BZ2-0357 M5757 M5757/23-041 m5757 relay PDF

    Untitled

    Abstract: No abstract text available
    Text: Skip to content | | | Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products


    Original     		M5757 M5757/23-042 PDF

    "MARKING TE" US6

    Abstract: No abstract text available
    Text: TO SHIBA RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ±0.1. TYPE No. RI (kfì) R2 (kO)


    OCR Scan     		RN1901 RN1906 RN1901, RN1902, RN1903, RN1904, RN1905, RN2901 RN2906 "MARKING TE" US6 PDF

    1amx

    Abstract: transistor marking 1am RN1903 marking 1am
    Text: TOSHIBA RN1901-RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 .1 ± 0.1 , L 2 5 ± Q .l Including Two Devices in US6


    OCR Scan     		RN1901-RN1906 RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 RN2901-RN2906 RN1901 RN1902 1amx transistor marking 1am RN1903 marking 1am PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 Including Two Devices in US6


    OCR Scan     		RN1901 RN1906 RN1901, RN1902, RN1903, RN1904, RN1905, RN2901 RN2906 PDF

    T 402 transistor

    Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
    Text: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP


    OCR Scan     		ALA401/402 PR352A21 PR352A2 NR151A01 NR151 005002b T 402 transistor 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array PDF

    a 1757 transistor

    Abstract: A 1952 transistors a 1757 transistor 2SA 2SC5103 transistors 2SA rohm 2sa 1757 EM 5103
    Text: 2S A 1 952 / 2 S A 1 906 / 2S A 1 757 Transistors I 2 S C 5 1 03 / 2 S C 45 96 High-speed Switching Transistor 2 S A 1 952 / 2 S A 1 906 / 2 S A 1 757 •A b s o lu te maximum ratings Ta—2813 •F e a tu re s 1) 2) 3) 4) High speed sw itching (tf ! Typ. 0 A 5 ^ s at l c = —3A )


    OCR Scan     		2SA1952 2SA1906 2SA1757 2SC5103 2SC4596 Ta--2813) 5103/2S O-220, 0Dlb713 O-220FN a 1757 transistor A 1952 transistors a 1757 transistor 2SA transistors 2SA rohm 2sa 1757 EM 5103 PDF

    transistor gt 322

    Abstract: transistor gt 322 b1 service-mitteilungen Kombinat VEB A 301 luxomat halbleiterwerk Halbleiterwerk Frankfurt d 1708 Servicemitteilungen BF173
    Text: SERVICE-MITTEILUNGEN -television V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N ÉÉitttvi r a d i o AUSGABE: 3/72 DATUM: liai 1972 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt 1. Neue Fernsehgeräte Neu im Produktionsprogramm 1971 sind die Standardklasse II-Geräte


    OCR Scan     		PDF

    D1906

    Abstract: 2SB1270 2SD1906 777T
    Text: Ordering num ber: EN 2266A SAMYO i N 0.2266A F 2 S B 1 2 7 0 / 2 S D 1 9 0 6 PNP/NPN Epitaxial Planar Type Silicon Transistors r H i g h -C u r r e n t S w i t c h i n g A p p l i c a t i o n s Applications . Suitable for relay drivers, high-speed inverters, converters, and other


    OCR Scan     		2266a 2SB1270 D1906 2SD1906 777T PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b S 3 ^31 0055^55 577 M IN AMER PHILIPS/DISCRETE APX Product specification b 7 E l - NPN general purpose transistor FEATURES PMSS3904 PIN CONFIGURATION • S-mini package. DESCRIPTION NPN transistor in a plastic SOT323


    OCR Scan     		PMSS3904 OT323 MAM062 bbS3R31 PDF

    2sa925

    Abstract: 2SC1901 2SA905 138B 309B
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		200/unit 2sa925 2SC1901 2SA905 138B 309B PDF

    PMSS3904 Philips SOT323

    Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
    Text: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3


    OCR Scan     		bbS3T31 25CJ2E PMSS3904 OT323 MAM062 bbS3T31 PMSS3904 Philips SOT323 transistor p04 p04 transistor PMSS3904 MARKING CODE D4t PDF