Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Transistor MPS4250 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO -40 Vdc Collector-Emitter Voltage VCES -40 Vdc Collector-Base Voltage VCBO ^0 Vdc Emitter-Base Voltage
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MPS4250
1334b
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D 2578 equivalent
Abstract: MRF1090MA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1090M A M R F1090M B The RF Line M ic ro w av e Pulse P o w er Transistors . . . designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc
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F1090M
MRF1090MA
MRF1090MB
MRF1090M
D 2578 equivalent
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C 2577 transistor
Abstract: TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor
Text: TELEFUNKEN ELECTRONIC 17E » • fl^ OCnb QOGTMB^ 0 1 BF 885 S miHNIMCSlIM electronic Crtttn* T«cbnotoö*s Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages In TV receivers Features: • High reverse voltage • No frFE-drift dependent of temperature
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T0126
15A3DIN
C 2577 transistor
TRANSISTOR C 2577
marking EB 202 transistor
BF885S
transistor MARKING CODE RJ
TRANSISTOR Bf 264
transistor bf 885
12A3
T0126
BF transistor
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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ECG2559
Abstract: ECG2560 ECG2561 ECG2562 ECG2563 ECG2564 ECG2565 T0-220J ECG2569 ECG2567
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b v CEO Base to Emitter Volts BVEBO Max. Collector Current l£ Amps Max. Device Diss. Pn
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ECG2559
ECG2560)
T48-3
ECG2560
ECG2559)
ECG2561
O-220
ECG2562
ECG2563)
ECG2563
ECG2564
ECG2565
T0-220J
ECG2569
ECG2567
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pc 2581 v
Abstract: 2SA1094 2SA1095 2sa1094 transistor AC/micro pc 2581 2sc2562 138B 2SA1012 S211
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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/-500N
2SA1110
7c-25
2SA1111
pc 2581 v
2SA1094
2SA1095
2sa1094 transistor
AC/micro pc 2581
2sc2562
138B
2SA1012
S211
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PDF
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MG1200V1us51
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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MG1200V1US51/
MG1800V1US51
MG1200V1us51
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STR 6307
Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.
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500V-1000A
J22587
STR 6307
str 6307 datasheet
STR 6307 POWER
str 1096
toshiba gto
ic str 6307
data sheet str 6307
equivalent transistor D 908
STR S 6307
TOSHIBA str module
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sem 5025
Abstract: lm317 8pin ic IC LM317 8pin AN-33 national
Text: April 1998 S e m i c o n d u c t o r Precision S e c o n d a ry R e g u la to r/D riv e r General Description The LM3411 circuitry includes an internally com pensated op amp, a bandgap relerence, NPN output transistor, and v o lt age setting resistors. B ecause o1 its sm all die size, one ot the available packages
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LM3411
LM3411
sem 5025
lm317 8pin ic
IC LM317 8pin
AN-33 national
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PDF
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Untitled
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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MG1200V1US51/
MG1800V1US51
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Untitled
Abstract: No abstract text available
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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ST1200FXF21
500-V,
000-A
300-V,
200-A
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str 6307
Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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ST1200FXF21
500-V,
000-A
300-V,
200-A
str 6307
str 6307 datasheet
STR 6307 POWER
sg6105dz
Toshiba IGBT 1200A 3300V
toshiba gto
TOSHIBA IGBT snubber
STR S 6307
toledo
TOSHIBA str module
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150 watt hf transistor 12 volt
Abstract: ferroxcube wideband hf choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and com m ercial FM equipment operating in the range of 8 5 0 -9 6 0 MHz. • Motorola Advanced Amplifier Concept Package
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Tac0-960
MRF898
150 watt hf transistor 12 volt
ferroxcube wideband hf choke
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PDF
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S-AU80
Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Text: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors
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10PEP
20PEP
60PEP
2SC2290
100PEP
2SC2879
150PEP
2SC2510*
2SC2782
S-AU80
TOSHIBA RF Power Module S-AV17
toshiba s-au80
quality FM TRANSMITTER
S-AV17
toshiba 2sc2879
2sc2879 equivalent
2SK3075
S-AV6
5252 F ic
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OPCA-02
Abstract: ABB ACS350 ACS350 FMBA-01 9pin D-connector modbus ACS350 drives ACS350-03X-01A9-4 ACS350-01X-09A8-2 J400 acs-cp-a
Text: ABB general machinery drives ACS350, 0.37 to 7.5 kW / 0.5 to 10 hp Technical catalogue PROFILE INDUSTRIES PRODUCTS APPLICATIONS EXPERTISE PARTNERS SERVICES ACS350_EN_revC.indd 1 30.6.2006 9:40:15 Two ways to select your drive Choice 1: Simply contact your local ABB drives
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ACS350,
ACS350
ACS350
3AFE68596106
HANSAPRINT/SAL06
OPCA-02
ABB ACS350
FMBA-01
9pin D-connector modbus
ACS350 drives
ACS350-03X-01A9-4
ACS350-01X-09A8-2
J400
acs-cp-a
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PDF
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servo LM2575
Abstract: lm2577 with external transistor 2n2222 national semiconductor LM337 sot23-5 lm2574 constant current LM2574 SCHEMATIC DIAGRAM lm2575 adj led LM341 sot23-5 marking ha transformer LM2576
Text: tß Semiconductor LM3411 Precision Secondary Regulator/Driver General Description The LM 3411 is a low pow er fixed-voltage 3.3V or 5.0V pre cision shunt regulator designed specifically for driving an optoisola to r to provide feedback isolation in a sw itching regula
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LM3411
LM3411
servo LM2575
lm2577 with external transistor
2n2222 national semiconductor
LM337 sot23-5
lm2574 constant current
LM2574 SCHEMATIC DIAGRAM
lm2575 adj led
LM341
sot23-5 marking ha
transformer LM2576
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PDF
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TPC6801
Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh
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HA5190
Abstract: HA2-5190-2 HA-5190 5195-5 THERMALLOY 2268b
Text: Œ HA-5190, HA-5195 Wideband, Fast Settling Operational Amplifiers March1993 Features Description • Fast Settling Time 0 .1 % . 70ns • Very High Slew R a te . 200V/ns •
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h1993
HA-5190,
HA-5195
HA-5190/5195
150MHz
50ns/Div.
HA-5195
AMPLIFIER/75
HA5190
HA2-5190-2
HA-5190
5195-5
THERMALLOY 2268b
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance
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TPS820
TPS820
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c 5252 transistor
Abstract: No abstract text available
Text: New Product Guide Current Linear Output Photo-IC TPS820 Outline Optical and Electri The TPS820 is a linear output photo-IC current output type which incorporates a photodiode and a current amp circuit in a single chip. The sensitivity is superior to that of a phototransistor and its illuminance
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TPS820
TPS820
c 5252 transistor
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PDF
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AS150A
Abstract: No abstract text available
Text: h a r ris S E M I C O N D U C T O R Œ HA-5190, HA-5195 " * 7 Wideband, Fast Settling Operational Amplifiers March 1993 Features Description • Fast Settling Time 0 .1 % . 70ns HA-5190/5195 are monolithic operational amplifiers
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HA-5190,
HA-5195
HA-5190/5195
150MHz
100ns/Div.
50ns/Div.
AMPLIFIER/75Q
AS150A
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PDF
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bridge rectifier diode toshiba
Abstract: No abstract text available
Text: Photocouplers for DAA Circuits TLP270D/TLP270G 14-Pin SOP NEW PRODUCT GUIDE Toshiba's TLP270D and TLP270G represent a new type of photocoupler; they provide many required multi-functions in DAA circuits for communication modems and are conveniently integrated into one small 14-pin SOP (SOP16 package).
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TLP270D/TLP270G
14-Pin
TLP270D
TLP270G
TLP270D/TLP270G)
bridge rectifier diode toshiba
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PDF
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HARRIS 5195
Abstract: ha5195-5 HA2-5190-2 HA1-5195-5 HA5190 5195-5 2268B harris ha-5195 X1320
Text: HARRIS SEMICON] SECTOR blE » • 4302271 004L.743 10b « H A S HA-5190, HA-5195 33 Wideband, Fast Settling Operational Amplifiers March1993 Features • Description Fast Settling Tim * 0.1% ).70ns • Very High Slaw R a ta .200V/ns
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HA-5190,
HA-5195
00V/na
150MHz
HA-5190/5195
HGURE14.
50ns/Div.
M3QSE71
HARRIS 5195
ha5195-5
HA2-5190-2
HA1-5195-5
HA5190
5195-5
2268B
harris ha-5195
X1320
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PDF
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Toshiba thyristors
Abstract: bosch motorola 002X5 Flash 1987 delco radio Delco
Text: SGS-THOMSON Microelectronics pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY
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pre98whi
Toshiba thyristors
bosch motorola
002X5
Flash 1987
delco radio
Delco
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