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    C 3421 TRANSISTOR Search Results

    C 3421 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 3421 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6770 JANTXV

    Abstract: 2N6764 JANTX 2N6764 2N6766 2N6768 2N6770 JANTXVHCA2N6766
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2001. MIL-PRF-19500/543F 7 September 2001 SUPERSEDING MIL-PRF-19500/543E 5 August 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON


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    MIL-PRF-19500/543F MIL-PRF-19500/543E 2N6764, 2N6766, 2N6768, 2N6770, 2N6770 JANTXV 2N6764 JANTX 2N6764 2N6766 2N6768 2N6770 JANTXVHCA2N6766 PDF

    2N7383

    Abstract: 2n7382 615C
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 June 2007. MIL-PRF-19500/615D 14 March 2007 SUPERSEDING MIL-PRF-19500/615C 6 October 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,


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    MIL-PRF-19500/615D MIL-PRF-19500/615C 2N7382 2N7383, MIL-PRF-19500. 2N7383 615C PDF

    transistors 547C

    Abstract: 2N6660 JANTX 2N6660 2N6661 Transistor 547c
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2009. MIL-PRF-19500/547C 24 June 2009 SUPERSEDING MIL-PRF-19500/547B 30 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


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    MIL-PRF-19500/547C MIL-PRF-19500/547B 2N6660 2N6661, MIL-PRF-19500. transistors 547C 2N6660 JANTX 2N6661 Transistor 547c PDF

    TRANSISTOR J 5804

    Abstract: j 5804 transistor j 5804 8205 A mosfet transistor 5910 6811 brushless pwm ac chopper 8205 dual mosfet BIT 3195 TMIS-3185/480/3P
    Text: TABLE OF CONTENTS General Information . page 2 Product Selection Guides • ■ ■ ■ ■ ■ ■ ■ Power Sink Drivers . 3


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    PDF

    2N7291

    Abstract: 2N7295 c 3421 transistor 2N7293 FRK150 frk450
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 October 2004. MIL-PRF-19500/606B 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY


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    MIL-PRF-19500/606B MIL-PRF-19500/606A 2N7291, 2N7293, 2N7295, 2N7297, MIL-PRF-19500. 2N7291 2N7295 c 3421 transistor 2N7293 FRK150 frk450 PDF

    2N6660 JANTX

    Abstract: 2N6660 2N6661 MIL-PRF19500
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/547B 30 July 1999 SUPERSEDING MIL-S-19500/547A 20 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


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    MIL-PRF-19500/547B MIL-S-19500/547A 2N6660 2N6661 2N6660 JANTX 2N6661 MIL-PRF19500 PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: 2N7336 IRFG6110 MO-036AB
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/598B 5 November 2003 SUPERSEDING MIL-PRF-19500/598A 24 November 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR,


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    MIL-PRF-19500/598B MIL-PRF-19500/598A 2N7336, MIL-PRF-19500R MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2N7336 IRFG6110 MO-036AB PDF

    2N7422

    Abstract: 2N7423 2N7422U 662C IRHM9150 2N7422 2N7423U 2n742
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 January 2009. MIL-PRF-19500/662C 22 October 2008 SUPERSEDING MIL-PRF-19500/662B 16 January 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED


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    MIL-PRF-19500/662C MIL-PRF-19500/662B 2N7422, 2N7422U, 2N7423, 2N7423U, MIL-PRF-19500. 2N7422 2N7423 2N7422U 662C IRHM9150 2N7422 2N7423U 2n742 PDF

    2N7389

    Abstract: 2N7390 2N7390U 2N7389U 2N7389 DATASHEET c 3421 transistor
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 March 2008. MIL-PRF-19500/630E 19 December 2007 SUPERSEDING MIL-PRF-19500/630D 30 March 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON,


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    MIL-PRF-19500/630E MIL-PRF-19500/630D 2N7389, 2N7390, 2N7389U, 2N7390U, MIL-PRF-19500. 2N7389 2N7390 2N7390U 2N7389U 2N7389 DATASHEET c 3421 transistor PDF

    2N6804

    Abstract: 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 November 2010. MIL-PRF-19500/562E 26 August 2010 SUPERSEDING MIL-PRF-19500/562D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON,


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    MIL-PRF-19500/562E MIL-PRF-19500/562D 2N6804 2N6806 MIL-PRF-19500. 2N6806 IRF9130 IRF9131 IRF9132 IRF9133 2n6806 jantx MIL-PRF-19500/558D PDF

    2N6782U

    Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


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    MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U PDF

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


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    MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K PDF

    2N7380

    Abstract: 2N7381 T0-257AA
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2002. INCH-POUND MIL-PRF-19500/614B 22 February 2002 SUPERSEDING MIL-PRF-19500/614A 3 May 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR,


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    MIL-PRF-19500/614B MIL-PRF-19500/614A 2N7380 2N7381 2N7381 T0-257AA PDF

    2N6760 equivalent

    Abstract: 2N6758 equivalent 2N6756 2N6758 2N6760 2N6762 IRF130 IRF230 Transistor irf230 104-2 substitution
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2010. MIL-PRF-19500/542H 26 April 2010 SUPERSEDING MIL-PRF-19500/542G 8 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,


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    MIL-PRF-19500/542H MIL-PRF-19500/542G 2N6756, 2N6758, 2N6760, 2N6762, MIL-PRF-19500. 2N6760 equivalent 2N6758 equivalent 2N6756 2N6758 2N6760 2N6762 IRF130 IRF230 Transistor irf230 104-2 substitution PDF

    BIT 3195 G

    Abstract: TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ
    Text: Allegro MicroSystems Fax-on-Demand: 1-888-286-9288 Outside North America: 1-202-216-1827 ICs and PMCMs PRODUCT INDEX in NUMERICAL ORDER Part Number* Description 8932-A 8958 Motor Drivers Quad, 1.8 A, 50 V Darlington Power Driver Quad, 1.8 A, 50 V Darlington Power Driver


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    932-A BIT 3195 G TRANSISTOR 5804 transistor 5910 2878 transistor ma 8920 regulator darlington array 2804 BIT 3195 8205 A mosfet 8205 mosfet 5810-FQ PDF

    2n7513

    Abstract: 2N7512 MOS 6888 MIL-PRF19500 ON MARKING 3161
    Text: INCH-POUND MIL-PRF-19500/689 28 February 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R This specification is approved for use by all Departments


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    MIL-PRF-19500/689 2N7512, 2N7513, 2N7514 MIL-PRF-19500. 2n7513 2N7512 MOS 6888 MIL-PRF19500 ON MARKING 3161 PDF

    2N6804

    Abstract: 2N6806 MIL-PRF19500 562C
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 October 1999 INCH-POUND MIL-PRF-19500/562C 30 July 1999 SUPERSEDING MIL-S-19500/562B 7 January 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON


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    MIL-PRF-19500/562C MIL-S-19500/562B 2N6804 2N6806 2N6806 MIL-PRF19500 562C PDF

    2N6756

    Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 August 1998 INCH-POUND MIL-PRF-19500/542F 20 April 1998 SUPERSEDING MIL-S-19500/542E 17 August 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,


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    MIL-PRF-19500/542F MIL-S-19500/542E 2N6756, 2N6758, 2N6760, 2N6762, 2N6756 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230 PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. INCH-POUND MIL-PRF-19500/663F 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS,


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    MIL-PRF-19500/663F MIL-PRF-19500/663E 2N7431, 2N7432, 2N7433, MIL-PRF-19500. PDF

    9307 7 segment decoder DTL

    Abstract: bcd to seven segment circuit diagram Fairchild 9307 Fairchild bcd to decimal 10 pins dual seven segment display 9307 ScansUX985
    Text: TTL/MSI 9307 SEVEN SEGMENT DECODER D E S C R IP T IO N — The 9 3 0 7 is a Seven Segment Decoder designed to accept four inputs in 3421 BCD code and provide the appropriate outputs to drive a seven segment numerical display. The decoder can be used w ith seven segment incandescent lamp, neon, electro-lum inescent, or C R T num eric displays.


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    16-LEAD 9307 7 segment decoder DTL bcd to seven segment circuit diagram Fairchild 9307 Fairchild bcd to decimal 10 pins dual seven segment display 9307 ScansUX985 PDF

    2N3419

    Abstract: 2N3420 2N3421 2N3418 Unitrode transistors data To5 2N3416 JANTXV2N3418 JANTXV2N3419 2n3418-2n3421 N3421
    Text: POWER TRANSISTORS JAN, JANTX, JAN, JANTX, JAN, JANTX, JAN, JANTX, 3 Amp, 80V, Planar NPN & JANTXV 2N3418 & JANTXV 2N3419 & JANTXV 2N3420 & JANTXV 2N3421 FEATURES DESCRIPTION • M e e t s M IL -S -1 9 5 0 0 / 3 9 3 U n it r o d e p o w e r t r a n s is t o r s p r o v id e a u n iq u e


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    JANTXV2N3418 JANTXV2N3419 2N3420 2N3421 MIL-S-19500/393 861-654D 2N3419 2N3421 2N3418 Unitrode transistors data To5 2N3416 2n3418-2n3421 N3421 PDF

    BU125S

    Abstract: BFX34 BSS44 BSW68 to39
    Text: POWER TRANSISTORS D E S C R IP T IO N P O L A R IT Y > o 00 o :> A 0 3 3 A TYPE Planar for switching applications < _u an d e E L/ LL J= <s > X to < _o M 3: S E > tu LÜ O CJ o ir? evi II o H@ § Q a. PACKAGE (continued) BFX34 NPN General purpose 120 60


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    BFX34 BSS44 BSW68 BU125S O-39l 3440S to39 PDF

    c 3421 transistor

    Abstract: d 3421 transistor J802
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS


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    100-Watts MJ4502 c 3421 transistor d 3421 transistor J802 PDF

    c 3421 transistor

    Abstract: GSRU20040 2n6924 gsru200 2N2891
    Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .


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    MIL-STD-750, MIL-STD-883C, c 3421 transistor GSRU20040 2n6924 gsru200 2N2891 PDF