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    C 4242 TRANSISTOR Search Results

    C 4242 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 4242 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C 4242

    Abstract: D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 transistor C 4242 D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G

    D 4242

    Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 D 4242 transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242

    4269g

    Abstract: IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b
    Text: Adjustable LED Driver TLE 4242 G Target Data Features • • • • • • • • Adjustable constant current up to 500mA ±5% Wide input voltage range up to 42V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF 500mA P-TO263-7-1 P-TO-263-7-1 4269g IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b

    D 4242

    Abstract: transistor C 4242 datasheet C 4242 FON QFN marking lt 1173 c4242 0023u
    Text: LTC4242 Dual Slot Hot Swap Controller for PCI Express U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Allows Live Insertion into PCI Express Backplane Controls Two Independent PCI Express Slots Independent Control of Main and Auxiliary Supplies


    Original     		PDF LTC4242 38-Lead 36-Lead LTC4215 LTC4216 LTC4221 LTC4241 4242f D 4242 transistor C 4242 datasheet C 4242 FON QFN marking lt 1173 c4242 0023u

    pc diagnostic card

    Abstract: No abstract text available
    Text: LTC4242 Dual Slot Hot Swap Controller for PCI Express U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Allows Live Insertion into PCI Express Backplane Controls Two Independent PCI Express Slots Independent Control of Main and Auxiliary Supplies


    Original     		PDF LTC4242 38-Lead 36-Lead OT-23 4242f Si2306DS pc diagnostic card

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


    Original     		PDF HE6739 HSC4242 HSC4242 O-220 183oC 217oC 260oC

    D496

    Abstract: RE40 adc900
    Text: BCM ArrayTM BC384R120T060VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 600 Watt 900 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 50 A K = 1/32 Rout = 10.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T060VM-00 BC384R120T060VM-00 D496 RE40 adc900

    RL400

    Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
    Text: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new


    Original     		PDF D-34123 RL400 RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301

    D496

    Abstract: RE40 4242 transistor
    Text: BCM ArrayTM BC384R120T030VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 25 A K = 1/32 Rout = 20.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T030VM-00 BC384R120T030VM-00 D496 RE40 4242 transistor

    D496

    Abstract: RE40
    Text: BCM ArrayTM BC384R120T030VM-00 Features • 384 V to 12 V VI BRICK BCM Array • 300 Watt 450 Watt for 1 ms Vin = 360 – 400 V Vout = 11.3 – 12.5 V Iout = 25 A K = 1/32 Rout = 20.0 mΩ max • Vertical mount package reduces footprint • Integrated heat sink simplifies


    Original     		PDF BC384R120T030VM-00 BC384R120T030VM-00 D496 RE40

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC352R440T033VM-00 Features • 352 Vdc – 44 Vdc 325 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC352R440T033VM-00 sac 187 217F D496 D505

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC384R480T065VM-00 Features • 384 Vdc – 48 Vdc 650 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC384R480T065VM-00 sac 187 217F D496 D505

    sac 187

    Abstract: 217F D496 D505
    Text: BCM ArrayTM BC384R480T033VM-00 Features • 384 Vdc – 48 Vdc 325 W VI BRICK BCM Array • Integrated heatsink simplifies TM thermal management • Vertical mount package reduces footprint • High efficiency >95% reduces system Size: 3.54 x 0.56 x 1.13 in


    Original     		PDF BC384R480T033VM-00 sac 187 217F D496 D505

    TRANSISTOR BC 384

    Abstract: transistor BC 945 D496 D505
    Text: BCM TM Bus Converter Features Size: 1.91 x 1.09 x 0.37 in 48,6 x 27,7 x 9,5 mm • 100°C baseplate operation • Typical efficiency 95% • 384 V to 12 V Bus Converter • <1 µs transient response • 300 Watt 450 Watt for 1 ms • >3.5 million hours MTBF


    Original     		PDF BC384A120T030FP TRANSISTOR BC 384 transistor BC 945 D496 D505

    MM8001

    Abstract: M8-001 MM8000 M8000
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­


    OCR Scan     		PDF b3b7554 MM8000 MM8001 M8001) 240ohm MM8001 M8-001 M8000

    D 4242 transistor

    Abstract: IEC-664 insulation distances ST T4 1060 H 4242 transistor 4242 transistor
    Text: Optocouplers P lastic O ptocouplers P ut an end to erroneous data, false control signals, and damaged circuits with HP’s line of high-performance plastic optocouplers. There are six basic families of optocoup­ lers to choose from: high-speed logic gate, high-speed


    OCR Scan     		PDF

    D 4242 transistor

    Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
    Text: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


    OCR Scan     		PDF B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six Independent gates each of which performs an Inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368

    Untitled

    Abstract: No abstract text available
    Text: co <o « CTI National ÉSà Semiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368

    6573

    Abstract: DM54368 DM54368J DM54368W J16A W16A
    Text: 368 CTl National ÉSASemiconductor DM54368 Hex TRI-STATE Inverting Buffers General Description This device contains six independent gates each of which performs an inverting buffer function. The outputs have the TRI-STATE feature. When enabled, the outputs exhibit the


    OCR Scan     		PDF DM54368 6573 DM54368J DM54368W J16A W16A