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    C BAND MMIC M/A COM Search Results

    C BAND MMIC M/A COM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    F5806-B Coilcraft Inc Common mode choke, not RoHS Visit Coilcraft Inc

    C BAND MMIC M/A COM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMD1414-2C

    Abstract: No abstract text available
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1414-2C M I C R O W A V E SEMICONDUCTOR TECHNICAL DATA FEATURES n n Suitable for Ku-band VSAT HIGH POWER P1dB=34.0dBm TYP. n HIGH POWER ADDED EFFICIENCY ηadd=29% (TYP.) n HIGH GAIN G1dB=24.0dB (TYP.) n BROADBAND OPERATION


    Original     		PDF TMD1414-2C TMD1414-2C

    ka-band amplifier

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band


    OCR Scan     		PDF MGFC5110 GFC5110 100pF ka-band amplifier

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High


    OCR Scan     		PDF MGFC5212 MGFC5212

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High


    OCR Scan     		PDF MGFC5211 MGFC5211

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High


    OCR Scan     		PDF MGFC5213 MGFC5213

    LNA ka-band

    Abstract: MITSUBISHI CAPACITOR
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band


    OCR Scan     		PDF MGFC5109 MGFC5109 LNA ka-band MITSUBISHI CAPACITOR

    vD1A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band


    OCR Scan     		PDF MGFC5108 MGFC5108 100pF vD1A

    Untitled

    Abstract: No abstract text available
    Text: E èÎËQGÇS AKD2806 Ku-Band DBS MMIC Downconverter A D V A N C E D PR O D U C T IN FO R M A TIO N REV 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated M onolithic D ow nconverter C overs both FSS & DBS Bands Band Sw itching C apability


    OCR Scan     		PDF AKD2806 AKD2806,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially


    OCR Scan     		PDF MGFC5218 MGFC5218

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip


    OCR Scan     		PDF MGFC5107 MGFC5107

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip


    OCR Scan     		PDF MGFC5107 MGFC5107 100pF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip


    OCR Scan     		PDF MGFC5108 MGFC5108

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip


    OCR Scan     		PDF MGFC5109

    Untitled

    Abstract: No abstract text available
    Text: S O N Y _ SP5T GSM TRIPLE-BAND ANTENNA SWITCH CXG1092N Overview Sheet TENTATIVE DATA 6.4 M M k Cl C □ □ □ = (= (= c c c . c: □ □ □ □ □ □ (= 5.0 M M □ SSO P-20P-L03 Description • This 5V SP5T + logic is a high power antenna MMIC switch


    OCR Scan     		PDF CXG1092N P-20P-L03 GSM900) -36dBm SSOP-20pin. GSM900/DCS1800/PCS1900 CXG1092D120P

    Untitled

    Abstract: No abstract text available
    Text: Tem ic S858TA3 S e m i c o n d u c t o r s Cascadable Silicon Bipolar MMIC Amplifier Electrostatic sensitive device. Observe precautions for handling A Applications General purpose 50 Q gain block for narrow and broad band IF and RF amplifiers in commercial and industrial


    OCR Scan     		PDF S858TA3 09-Apr-97

    t918

    Abstract: 10000 uf ovam 40
    Text: E èÎËQGÇS AWT918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset


    OCR Scan     		PDF AWT918 900/D 900/G AWT918 t918 10000 uf ovam 40

    x-band mmic

    Abstract: No abstract text available
    Text: M / A - CO M ADV S E M I C O N D U C T O R 57E D 5fc>M21fl3 O G O D É1 Ô fi r-5/// MA4GM261 and MA4GM262 GaAs MMIC 8-12 GHz X-Band] SPST and SPOT Switch Chips Features • HIGHER ISOLATION THAN BROADBAND SWITCHES ■ LOWER LOSS THAN BROADBAND SWITCHES .


    OCR Scan     		PDF M21fl3 MA4GM261 MA4GM262 MA4GM262 DC-12 Sk421fl3 MA4QM261 x-band mmic

    Untitled

    Abstract: No abstract text available
    Text: DBS - Downconverter AKD2705 Ku-Band DBS MMIC Downconverter Advanced Product Information Rev. 2 F U N C T IO N A L B L O C K D IA G R A M FEATURES Integrated Monolithic Downconverter Surface Mount Package 7 dB Noise Figure 35 dB Conversion Gain Single + 6 Volt Supply


    OCR Scan     		PDF AKD2705 AKD2705

    TRANSISTOR 0835

    Abstract: Silicon Bipolar Transistor 35 MICRO-X 0/PJA 0836
    Text: | j g | H e w le tt* WLkM P A C K A R D Cascadable Silicon Bipolar MMIC A m plifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this fre­ quency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial


    OCR Scan     		PDF MSA-0835, TRANSISTOR 0835 Silicon Bipolar Transistor 35 MICRO-X 0/PJA 0836

    56ti

    Abstract: No abstract text available
    Text: Data Sheet [ I k M h D I G I C AWT0902X TX POWER MMIC S Your GaAs 1C Source Advanced Product Information Rev 3 900 MHz Band AMPS GaAs Power Amplifier 1C DESCRIPTION The AWT0902X is a monolithic Power Amplifier suited for AMPS cellular telephone applications.


    OCR Scan     		PDF AWT0902X ANADS018 47tiF 56tiH 8/7/95-AWT0902 56ti

    Untitled

    Abstract: No abstract text available
    Text: HMC196C12 MICROWAVE CORPORATION GaAs MMIC SMT QPSK MODULATOR 2.4 GHz FE B R U A R Y 1998 Features General Description EXCELLENT AM PLITUDE AND PHASE BALANCE The H M C 1 9 6 C 1 2 Q P S K Modulator is designed to phase-modulate a RF signal into quadrature D IREC T M ODULATION IN THE 2.4 G Hz ISM BAND


    OCR Scan     		PDF HMC196C12 T0G4125

    Untitled

    Abstract: No abstract text available
    Text: M/A-COH/MELEC D IV-, LO WELL S2E D 5L>421fl3 0000522 hh3 « N A C O "V-~l i4-l'2>^C Bulletin No. 5604A MAAM 28010 Wide Band GaAs MMIC Amplifier 2 -8 GHz • 17 dB Typical Gain • ±0.5 dB Typical Broadband Gain Flatness • Single Bias Supply • On-Chip Bias Supply


    OCR Scan     		PDF 421fl3

    Untitled

    Abstract: No abstract text available
    Text: ri/A-COM/MELEC D I V -,LOülELL 52E J> • 5b 4 2 1 f l3 □000520 û^O « M A C O Bulletin No. 5603A MAAM28000 Wide Band GaAs MMIC Amplifier 2 -8 GHz . • • . . 17 dB Typical Gain ±0.5 dB typical Broadband Gain Flatness Single Bias Supply On-Chip Bias Network


    OCR Scan     		PDF MAAM28000

    SES N 3220

    Abstract: SSM 3220 TIC 2460
    Text: ITA-12300, ITA-12318 MagIC Silicon Bipolar MMIC 0.8 Gb/s Transimpedance Amplifier W hol H E W L E T T w !H M P A C K A R D 180 m il Package Features • High Transim pedance Gain: Az = 420012 72.5 dB • High Data Rates: 0.8 Gb/s NRZ • Wide Band w idth: 900 MHz (Chip)


    OCR Scan     		PDF ITA-12300, ITA-12318 SES N 3220 SSM 3220 TIC 2460