TMD1414-2C
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD1414-2C M I C R O W A V E SEMICONDUCTOR TECHNICAL DATA FEATURES n n Suitable for Ku-band VSAT HIGH POWER P1dB=34.0dBm TYP. n HIGH POWER ADDED EFFICIENCY ηadd=29% (TYP.) n HIGH GAIN G1dB=24.0dB (TYP.) n BROADBAND OPERATION
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TMD1414-2C
TMD1414-2C
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ka-band amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGFC5110
GFC5110
100pF
ka-band amplifier
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
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MGFC5212
MGFC5212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High
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MGFC5213
MGFC5213
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LNA ka-band
Abstract: MITSUBISHI CAPACITOR
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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MGFC5109
MGFC5109
LNA ka-band
MITSUBISHI CAPACITOR
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vD1A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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MGFC5108
MGFC5108
100pF
vD1A
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Untitled
Abstract: No abstract text available
Text: E èÎËQGÇS AKD2806 Ku-Band DBS MMIC Downconverter A D V A N C E D PR O D U C T IN FO R M A TIO N REV 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated M onolithic D ow nconverter C overs both FSS & DBS Bands Band Sw itching C apability
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AKD2806
AKD2806,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially
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MGFC5218
MGFC5218
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip
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MGFC5107
MGFC5107
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip
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MGFC5107
MGFC5107
100pF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5108 is a GaAs MMIC chip
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MGFC5108
MGFC5108
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip
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MGFC5109
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Untitled
Abstract: No abstract text available
Text: S O N Y _ SP5T GSM TRIPLE-BAND ANTENNA SWITCH CXG1092N Overview Sheet TENTATIVE DATA 6.4 M M k Cl C □ □ □ = (= (= c c c . c: □ □ □ □ □ □ (= 5.0 M M □ SSO P-20P-L03 Description • This 5V SP5T + logic is a high power antenna MMIC switch
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CXG1092N
P-20P-L03
GSM900)
-36dBm
SSOP-20pin.
GSM900/DCS1800/PCS1900
CXG1092D120P
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Untitled
Abstract: No abstract text available
Text: Tem ic S858TA3 S e m i c o n d u c t o r s Cascadable Silicon Bipolar MMIC Amplifier Electrostatic sensitive device. Observe precautions for handling A Applications General purpose 50 Q gain block for narrow and broad band IF and RF amplifiers in commercial and industrial
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S858TA3
09-Apr-97
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t918
Abstract: 10000 uf ovam 40
Text: E èÎËQGÇS AWT918 TX POWER MMIC Your GaAs IC Source Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC D ES C R IP TIO N : T he A W T918 is a m onolithic GaAs Pow er Am plifier. It can be used in the follow ing dual band handset
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AWT918
900/D
900/G
AWT918
t918
10000 uf
ovam 40
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x-band mmic
Abstract: No abstract text available
Text: M / A - CO M ADV S E M I C O N D U C T O R 57E D 5fc>M21fl3 O G O D É1 Ô fi r-5/// MA4GM261 and MA4GM262 GaAs MMIC 8-12 GHz X-Band] SPST and SPOT Switch Chips Features • HIGHER ISOLATION THAN BROADBAND SWITCHES ■ LOWER LOSS THAN BROADBAND SWITCHES .
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M21fl3
MA4GM261
MA4GM262
MA4GM262
DC-12
Sk421fl3
MA4QM261
x-band mmic
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Untitled
Abstract: No abstract text available
Text: DBS - Downconverter AKD2705 Ku-Band DBS MMIC Downconverter Advanced Product Information Rev. 2 F U N C T IO N A L B L O C K D IA G R A M FEATURES Integrated Monolithic Downconverter Surface Mount Package 7 dB Noise Figure 35 dB Conversion Gain Single + 6 Volt Supply
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AKD2705
AKD2705
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TRANSISTOR 0835
Abstract: Silicon Bipolar Transistor 35 MICRO-X 0/PJA 0836
Text: | j g | H e w le tt* WLkM P A C K A R D Cascadable Silicon Bipolar MMIC A m plifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this fre quency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial
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MSA-0835,
TRANSISTOR 0835
Silicon Bipolar Transistor 35 MICRO-X
0/PJA 0836
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56ti
Abstract: No abstract text available
Text: Data Sheet [ I k M h D I G I C AWT0902X TX POWER MMIC S Your GaAs 1C Source Advanced Product Information Rev 3 900 MHz Band AMPS GaAs Power Amplifier 1C DESCRIPTION The AWT0902X is a monolithic Power Amplifier suited for AMPS cellular telephone applications.
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AWT0902X
ANADS018
47tiF
56tiH
8/7/95-AWT0902
56ti
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Untitled
Abstract: No abstract text available
Text: HMC196C12 MICROWAVE CORPORATION GaAs MMIC SMT QPSK MODULATOR 2.4 GHz FE B R U A R Y 1998 Features General Description EXCELLENT AM PLITUDE AND PHASE BALANCE The H M C 1 9 6 C 1 2 Q P S K Modulator is designed to phase-modulate a RF signal into quadrature D IREC T M ODULATION IN THE 2.4 G Hz ISM BAND
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HMC196C12
T0G4125
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Untitled
Abstract: No abstract text available
Text: M/A-COH/MELEC D IV-, LO WELL S2E D 5L>421fl3 0000522 hh3 « N A C O "V-~l i4-l'2>^C Bulletin No. 5604A MAAM 28010 Wide Band GaAs MMIC Amplifier 2 -8 GHz • 17 dB Typical Gain • ±0.5 dB Typical Broadband Gain Flatness • Single Bias Supply • On-Chip Bias Supply
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421fl3
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Untitled
Abstract: No abstract text available
Text: ri/A-COM/MELEC D I V -,LOülELL 52E J> • 5b 4 2 1 f l3 □000520 û^O « M A C O Bulletin No. 5603A MAAM28000 Wide Band GaAs MMIC Amplifier 2 -8 GHz . • • . . 17 dB Typical Gain ±0.5 dB typical Broadband Gain Flatness Single Bias Supply On-Chip Bias Network
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MAAM28000
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SES N 3220
Abstract: SSM 3220 TIC 2460
Text: ITA-12300, ITA-12318 MagIC Silicon Bipolar MMIC 0.8 Gb/s Transimpedance Amplifier W hol H E W L E T T w !H M P A C K A R D 180 m il Package Features • High Transim pedance Gain: Az = 420012 72.5 dB • High Data Rates: 0.8 Gb/s NRZ • Wide Band w idth: 900 MHz (Chip)
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ITA-12300,
ITA-12318
SES N 3220
SSM 3220
TIC 2460
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