JE4353
Abstract: 2U 34 mje4343 motorola MJE4340
Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE4340
MJE4341
MJE4342
MJE4343
MJE4351
MJE4352
MJE4353
JE4353
2U 34
mje4343 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC 6367254 IXSTRS/R FJ MOTOROLA SC T b CXSTRS/R F D f ~ | h 3 t 7 2 S 4 O O Ô 1 1 1 D D _ 96D 8 1 1 1 0 T - 3 3 MOTOROLA 1 5 PNP NPN MJ15001 Mi15002 SEMICONDUCTOR TECHNICAL DATA 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS
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MJ15001
Mi15002
J15001
J15002
BREAK00WN
C01LECT0REMITT6R
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Motorola D45
Abstract: 80880 d45e s45e
Text: MOTOROLA SC r 6367254 -CXSTRS/R F> MOTOROLA SC It CXSTRS/R ti| l,3 t7 a S 4 96D 808 80 F D DDBQâêü 7^. 3 3 - _ NPN D44E Series PNP D45E Series MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA COM PLEM ENTARY SILICO N POWER DARLINGTON TR A N SISTO R S
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3b72S4
V01TS)
Motorola D45
80880
d45e
s45e
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ED-96
Abstract: ed96 curvas transistor AN-415 MJ4200 MJ4201 MJ4210 MJ4211
Text: MJ4200, MJ4201, MJ4210, MJ4211 continued F IG U R E 4 - T H E R M A L R E S P O N S E 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t.TIME(ms) 20 50 F IG U R E 5 - A C T IV E -R E G IO N S A F E O P E R A T IN G A R E A 100 200 500 1000 2000 NOTE C om puting Peak Junction Temperature
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MJ4200,
MJ4201,
MJ4210,
MJ4211
200oC.
AN-415)
ED-96
ed96
curvas transistor
AN-415
MJ4200
MJ4201
MJ4210
MJ4211
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LT1817 transistor
Abstract: LT1817
Text: MO TO RO LA SC X ST RS /R F MbE D • b3fc>72S4 001450*5 fl ■ HOTt MOTOROLA T -3 ? r0 5 m S E M IC O N D U C T O R m— mm TECHNICAL DATA LT1817 The RF Line N P N S ilic o n H igh F re q u e n c y T ra n s is to r f j = 1000 MHz MIN HIGH FREQUENCY TRANSISTOR
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LT1817
14E1G
C01LECT0R-8ASE
LT1817 transistor
LT1817
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR ^ marktech STTÌbSS DOQGMIQ T 1ÖE D international MTD6140 SILICON NPN EPITAXIAL PLANAR TENTATIVE SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P TIC A L SW ITCH • TAPE, C A R D R E A D E R S • V E L O C IT Y S E N S O R
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MTD6140
MTE1080.
MTE1060
C01LECT0R
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bus97
Abstract: lsoa lb134
Text: M O T O R O L A SC { X S T R S / R F3- r 6367254 1b MOTOROLA SC XSTR S/R F D^jb3t,755M DDÖ07S3 96D 8 0 7 5 3 D T MOTOROLA 33 - BUS97 BUS97A SEMICONDUCTOR TECHNICAL DATA 18 AMPERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICO N POWER TRA N SISTO RS
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F36367254
BUS97
BUS97A
BUS97A
lsoa
lb134
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2N5430 MOTOROLA
Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
Text: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —
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2N5428
2N5430
O-213AA
C01LECT0R-EMITTER
2N5430 MOTOROLA
2443 MOTOROLA transistor
IC CD 3102
2N5430
2N5428
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MJE2011
Abstract: MJE2021 MJE2020 MJE-2020 MJE2010
Text: MJE2010, MJE2011 PNP SILICON MJE2020, MJE2021 NPN 5.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS 40-60 VOLTS 80 WATTS . . . designed for use in general-purpose amplifier and switching applications. • Low Collector-Emitter Saturation Voltage VcE(sat) ” 1-0 Vdc (Max) @ l c * 3.5 Ade
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MJE2010,
MJE2011
MJE2020,
MJE2021
MJE2010
MJE2020
MIE3021
MJE-2020
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MTD6140
Abstract: MTE1080 SOURCE-MTE1060 CI400
Text: PHOTO TRANSISTOR ^ 41-U marktech STTÌbSS DOQGMIQ T 1ÖE D international MTD6140 SILICON NPN EPITAXIAL PLANAR TENTATIVE SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P T IC A L S W IT C H • TAPE, C A R D R E A D E R S • V E L O C IT Y S E N S O R
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MTD6140
MTE1080.
Ta-25
SOURCE-MTE1060
RL-10II9|
Rl-1000.
MTD6140
MTE1080
SOURCE-MTE1060
CI400
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MPSU01
Abstract: MPS-U01 MPS-U51 MPS-U01A MPS-U51A 2sc 724 mpsu01A MPSU51A transistor mpsu01 mpsu-01
Text: MPS-UOl SILICON MPS-U01A NPN SILICON ANNULAR TRANSISTORS . . » designed for complementary symmetry audio circuits to 10 Watts output. • Excellent Current Gain Linearity — 1.0 mAdc to 1.0 Adc • Low Collector-Emitter Saturation Voltage — VcE(sat) = 0. 5Vdc (Max) @ lc = 1-0 Adc
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MPS-U51
MPS-U51A
MPSU01
MPS-U01
MPS-U01A
MPS-U51A
2sc 724
mpsu01A
MPSU51A
transistor mpsu01
mpsu-01
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4229P-L00-3C8
Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8
Text: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 | ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection
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t3b75sq
MJ12005D
C01LECT0
4229P-L00-3C8
20A400
MJ12005D
POT CORE 4229P-L00
Ferrox EC52-3C8
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1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
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BR-BR-0034-58
1n813 fairchild
2N3303
abb inverter manual acs 800
FD6666 diode
2N3137
UA703 equivalent
FD200 diode
2N2369 AVALANCHE PULSE GENERATOR
UA716
Fairchild dtl catalog
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