003A
Abstract: 2SC4603 2SC4603R
Text: X SPECI F 1CAT 1ON DEVICE NAME : TYPE NAME : SPEC. No. : BIPOLAR TRANSISTOR 2 S C 4 6 0 3 R DATE Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DA TE DRAW N NAME APPROVED Fuji Electric CoJLtd CHECKED Y 0257-R-004a Ratings
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0257-R-004a
2SC4603F*
025T-R-003a
2SC4603R
0257-R-003a
003A
2SC4603
2SC4603R
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D00373
Abstract: GDG3737 A138
Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN
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05DM33Ã
GDG3737
T-91-01
D00373
A138
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transistor 15c
Abstract: No abstract text available
Text: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE T O -220 • Complement to KSA1010 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 1 50 1 00 7 7 15 3 .5 40 1.5 1 50 —5 5 ~ 1 50 V V V A A A W W °C “C Symbol Collector-Base Voltage
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KSC2334
KSA1010
C0LLEC70
transistor 15c
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