C104 TRANSISTOR Search Results

C104 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

C104 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
HC49 MEGATEC Abstract: c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet c103 TRANSISTOR equivalent 0805B104K500CT Text: DEMO9RS08KA2 Schematic and Bill of Material DC01098 SW102 RESET SW101 SW0 VDD GND GND GND 470R R108 470R R106 470R Q103 BSS138 Q102 BSS138 Q101 BSS138 www.softecmicro.com HB YELLOW LED2 LD103 RED LED1 LD102 C104 100nF R104 GND GND C103 100nF R103 10K VDD RED	Original	DEMO9RS08KA2 DC01098 SW102 SW101 BSS138 LD103 LD102 100nF HC49 MEGATEC c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet c103 TRANSISTOR equivalent 0805B104K500CT	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M capacitor marking c106 NFM18Ps105 TL217 NFM18PS105R0J3 TL222 Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA	PDF
SMD r801 Abstract: TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	PTFA220041M PTFA220041M SMD r801 TL217 TL218 TL2082 TRANSISTOR c801 c803 R804 3224W-202ECT-ND transistor c803 TL223	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 TL113 tl201 TL217 w3 smd transistor transistor c111	PDF
Untitled Abstract: No abstract text available Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power ampliier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain,	Original	PTFA220041M PTFA220041M PG-SON-10	PDF
c102 TRANSISTOR Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M c102 TRANSISTOR tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR TL108 tl111	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Text: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	PTFA220081M PTFA220081M PG-SON-10 c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113	PDF
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217	PDF
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104	PDF
FR10300N0200J Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M Text: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This	Original	AN10953 BLF645 BLF645, FR10300N0200J UT-085 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M	PDF

LQ9P031 Abstract: TRANSISTOR c104 TRANSISTOR D640 C104 D640 DF9B-31S-1V TC-10 D639 TRANSISTOR 443-T Text: LQ9P031 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 8.4" The SHARP LQ9P031 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,	Original	LQ9P031 LQ9P031 12-bit Ang170 TRANSISTOR c104 TRANSISTOR D640 C104 D640 DF9B-31S-1V TC-10 D639 TRANSISTOR 443-T	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 transistor c735 ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103	PDF
C101-C104 Abstract: C101 C104 AG SMD TRANSISTOR Text: MMBTRC101SS . MMBTRC106SS MMBTRC101SS . MMBTRC106SS Surface Mount Bias Resistor Transistors SMD Transistoren mit Eingangsspannungsteiler NPN NPN Version 2011-02-10 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse	Original	MMBTRC101SS MMBTRC106SS OT-23 O-236) UL94V-0 C101-C104 C101 C104 AG SMD TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: bSM'ìflZt □ D lb c104 ^5fl • M I T E M ITSU B ISH I INTEGRATED CIRCUIT M64080GP I MITSUBISHI ELEK LINEAR 4 1 0 M H z 2 S Y S T E M 1CHIP P L L FREQUENCY S Y N T H E S IZ E R DESCRIPTION The M 6 4080 G P is a 4 1 0 M H z band 2 system 1 chip PLL fre	OCR Scan	M64080GP 20P2E 020-P	PDF
m54958 Abstract: M64072 DA 2822 M M64070 GDLB M64080GP M64030 M64080 2272I Text: L2E D bfiMTûZb □ D l b c104 =550 • M I T E M IT S U B IS H I IN T E G R A T E D C IR C U IT M 64080GP I MITSUBISHI ELEK LINEAR 410M H z 2SYS TEM DESCRIPTION The M 6 4080 G P is a 4 1 0 M H z band 2 system 1 chip PLL fre 1 C H IP P L L F R E Q U E N C Y S Y N T H E S IZ E R	OCR Scan	0Dlbc104 M64080GP 410MHz M64080GP 410MHz. 410MHz) 20P2E-A m54958 M64072 DA 2822 M M64070 GDLB M64030 M64080 2272I	PDF
transistor c37 Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11 Text: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22	OCR Scan	OT-23) OT-323) OT-89) 2N2925 2N3703 2N3704 2N3706 2N3711 2N3860 2N3903 transistor c37 a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11	PDF
npn TRANSISTOR c105 Abstract: TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322 Text: ^outran i?K i5 ty) STr ättm=©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 71) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	203mm) C-105 npn TRANSISTOR c105 TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322	PDF
c104 TRANSISTOR Abstract: TRANSISTOR c104 C104 "Die No." Text: DIE No. NPN Small Signal TRANSISTOR DIE No. •MAXIMUM RATINGS T a = 2 5 ° C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 20 V Collector-Base Voltage VcBO 30 V Emitter-Base Voltage V 3 V ■ DESCRIPTION Collector Current Continuous lc 25 mA	OCR Scan	C--104 BFS20 150mW c104 TRANSISTOR TRANSISTOR c104 C104 "Die No."	PDF
npn TRANSISTOR c105 Abstract: TRANSISTOR c105 TRANSISTOR c104 c104 TRANSISTOR c105 TRANSISTOR 2N4906 Text: -Jfclitron Devices. Inc. I F K ® y ¥ © Ä T T M ,® ® MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 71 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver“ also available)	OCR Scan	203mm) 2N3720, 2N4901 2N4906, SDT3322 SDT3329 C-104 C-105 npn TRANSISTOR c105 TRANSISTOR c105 TRANSISTOR c104 c104 TRANSISTOR c105 TRANSISTOR 2N4906	PDF
c103 TRANSISTOR equivalent Abstract: TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105 Text: 1 Introduction Increasingly power supplies used in applications such as home appliance, office automation,communications and industrial area need to operate on the main AC line 100V and 200V as products are manufactured for global markets. Traditionally power supplies have been designed to operate on either 100V	OCR Scan	200VAC 2606C 95-220V 200uA c103 TRANSISTOR equivalent TRANSISTOR c105 c105 TRANSISTOR MK1210 transistor c107 m c103 m TRANSISTOR C102 M transistor c107 TRANSISTOR equivalent c102 TRANSISTOR triac C105	PDF

C104 TRANSISTOR Search Results

C104 TRANSISTOR Result Highlights (5)

C104 TRANSISTOR Datasheets Context Search

HC49 MEGATEC

capacitor marking c106

SMD r801

TL113

Untitled

c102 TRANSISTOR

c102 TRANSISTOR

C801

c102 TRANSISTOR

TRANSISTOR C802

c102 TRANSISTOR

TL225

TRANSISTOR C802

FR10300N0200J

LQ9P031

transistor c735

C101-C104

Untitled

m54958

transistor c37

npn TRANSISTOR c105

c104 TRANSISTOR

npn TRANSISTOR c105

c103 TRANSISTOR equivalent