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    TL201 Search Results

    TL201 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SN74GTL2010PWR Texas Instruments 10-Bit Voltage Clamp 24-TSSOP -40 to 85 Visit Texas Instruments Buy
    SN74GTL2014PWR Texas Instruments 4-bits LVTTL to GTL Transceiver 14-TSSOP -40 to 85 Visit Texas Instruments Buy
    SN74GTL2010PW Texas Instruments 10-Bit Voltage Clamp 24-TSSOP -40 to 85 Visit Texas Instruments Buy
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    TL201 Price and Stock

    Diodes Incorporated PI4GTL2014LEX

    IC TRANSLATOR UNIDIR 14TSSOP
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    DigiKey PI4GTL2014LEX Cut Tape 7,378 1
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    PI4GTL2014LEX Digi-Reel 7,378 1
    • 1 $1.84
    • 10 $1.17
    • 100 $0.794
    • 1000 $0.58756
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    PI4GTL2014LEX Reel 5,000 2,500
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    Mouser Electronics PI4GTL2014LEX 2,383
    • 1 $1.19
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    Avnet Asia PI4GTL2014LEX 8 Weeks 2,500
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    Avnet Silica PI4GTL2014LEX 10 Weeks 2,500
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    TOKO Inc PTL2012-F1N8C

    FIXED IND 1.8NH 800MA 150 MOHM
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    DigiKey PTL2012-F1N8C Cut Tape 4,094 1
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    Bourns Inc PTL20-10O0-103B2

    SLIDE POT 10K OHM 0.05W TOP 20MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTL20-10O0-103B2 Tray 2,108 1
    • 1 $2.39
    • 10 $1.917
    • 100 $1.57038
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    Avnet Americas PTL20-10O0-103B2 Tray 16 Weeks 600
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    Newark PTL20-10O0-103B2 Bulk 600
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    TTI PTL20-10O0-103B2 Tray 600 120
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    Master Electronics PTL20-10O0-103B2
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    TOKO Inc PTL2012-F68NT

    FIXED IND 68NH 100MA 5 OHM SMD
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    DigiKey PTL2012-F68NT Cut Tape 1,024 1
    • 1 $0.15
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    Bourns Inc PTL20-10R1-203B2

    SLIDE POT 20K OHM 0.05W TOP 20MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTL20-10R1-203B2 Tray 600 1
    • 1 $2.39
    • 10 $1.917
    • 100 $1.57038
    • 1000 $1.29128
    • 10000 $1.10875
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    Avnet Americas PTL20-10R1-203B2 Tray 16 Weeks 600
    • 1 -
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    • 1000 $1.25954
    • 10000 $1.1531
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    Newark PTL20-10R1-203B2 Bulk 600
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    • 1000 $1.36
    • 10000 $1.22
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    Master Electronics PTL20-10R1-203B2
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    Find more TL201 price and stock on Findchips.com

    TL201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PDF PTVA030121EA PTVA030121EA H-36265-2 TL235

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


    Original     		PDF PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PDF PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    c102 TRANSISTOR

    Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
    Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency


    Original     		PDF PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217

    TL2044

    Abstract: VL2044A
    Text: ffÓ VL2044_ 16x16 PARALLEL MULTIPLIER-ACCUMULATOR FEATURES DESCRIPTION • 16 X 16 parallel multiplication and product accumulation The V L2044 is a 16 X 16 parallel multiplier-accumulator M AC fabricated using C M O S silicon-gate


    OCR Scan     		PDF VL2044_ 16x16 L2044-65 L2044-90 VL2044-90) L1010, TL2010, LMA1010, 64-pin Arra20 TL2044 VL2044A

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification 10-bit GTL Processor Voltage Clamp TL2010 PIN CONFIGURATION FEATURES • Direct interface with TTL level • 6.5£2 O N-state connection between port S n and Dn GND QT 24] G ref S R E F fj- 23] d ref 22] Di s ,[7


    OCR Scan     		PDF 10-bit GTL2010 GTL2010

    cd 1191 acb

    Abstract: crystal oscillator 8mhz ntk tl38a 82C356 SI-111J CS82310 387DX WK2C mip 2F3 82C351
    Text: PEAK/DM Data Book February 1991 Copyright Notio« Software Copyright ê 1991, CHIPS and Technologies, Inc. Manual Copyright 1991, CHIPS and Technologies, Inc. All Rights Reserved. P tizüed in U.S.A. Trademarks PEAK , PEAK/DM™ and PEAK/5X™ are trademarks ofCHIPS and Technologies,


    OCR Scan     		PDF CS82310 386DXâ 387DXâ 9513d -DB04 012004-0M cd 1191 acb crystal oscillator 8mhz ntk tl38a 82C356 SI-111J 387DX WK2C mip 2F3 82C351

    T-538

    Abstract: K1557 82c311 82C316 i80387 LG variable frequency drive is3 82C811 hp 1502 vga 82c315 82C81
    Text: CS8233 PEAK/386 AT CHIPSet PEAK/386 AT December 1990 P R E L I M I N A R Y v -ir i i r b Copyright Notice Software Copyright 1990, CHIPS and Technologies, Inc. Manual Copyright © 1990, CHIPS and Technologies, Inc. a 11 r t J .1 r v ig U L » d _ v 6U .


    OCR Scan     		PDF CS8233 PEAK/386 T-538 K1557 82c311 82C316 i80387 LG variable frequency drive is3 82C811 hp 1502 vga 82c315 82C81