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    C109 005 Search Results

    C109 005 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C1099-A Coilcraft Inc SMPS Transformer Visit Coilcraft Inc Buy
    C1099-ALB Coilcraft Inc SMPS Transformer, ROHS COMPLIANT Visit Coilcraft Inc Buy
    C1099-AL Coilcraft Inc SMPS Transformer, 8.3W Visit Coilcraft Inc
    C1099- Coilcraft Inc PoE transformer, for MAX5941A, SMT, RoHS Visit Coilcraft Inc
    C1099-ALD Coilcraft Inc SMPS Transformer, ROHS COMPLIANT Visit Coilcraft Inc Buy
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    C109 005 Price and Stock

    Io Audio Technologies IO-IC109005-T2MCH-2R

    CABLE CHR/GOLD 90 CONN MONO 5'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IO-IC109005-T2MCH-2R Bulk 21 1
    • 1 $21.82
    • 10 $16.813
    • 100 $13.1632
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    Mouser Electronics IO-IC109005-T2MCH-2R
    • 1 $19.4
    • 10 $16.81
    • 100 $13.86
    • 1000 $12.65
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    Newark IO-IC109005-T2MCH-2R Bulk 19 1
    • 1 $9.5
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    RS IO-IC109005-T2MCH-2R Bulk 2 1
    • 1 $22.04
    • 10 $20.72
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    TestEquity LLC IO-IC109005-T2MCH-2R
    • 1 $15.25
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    Io Audio Technologies IO-IC109005-M2MBL

    CABLE SHARK BLUE CONN MONO 5'
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    DigiKey IO-IC109005-M2MBL Bulk 12 1
    • 1 $18.18
    • 10 $13.992
    • 100 $10.9389
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    Mouser Electronics IO-IC109005-M2MBL
    • 1 $15.65
    • 10 $13.88
    • 100 $12.1
    • 1000 $10.32
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    RS IO-IC109005-M2MBL Bulk 2 1
    • 1 $15.83
    • 10 $14.88
    • 100 $13.69
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    TestEquity LLC IO-IC109005-M2MBL
    • 1 $11.75
    • 10 $11.75
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    Io Audio Technologies IO-IC109005-T2MBK

    CABLE BLACK/GOLD CONN MONO 5'
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    DigiKey IO-IC109005-T2MBK Bulk 10 1
    • 1 $22.29
    • 10 $17.172
    • 100 $13.4477
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    Mouser Electronics IO-IC109005-T2MBK
    • 1 $18.76
    • 10 $16.26
    • 100 $13.4
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    Newark IO-IC109005-T2MBK Bulk 13 1
    • 1 $10.42
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    RS IO-IC109005-T2MBK Bulk 1 1
    • 1 $22.74
    • 10 $21.14
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    TestEquity LLC IO-IC109005-T2MBK
    • 1 $14.75
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    Io Audio Technologies IO-IC109005-T2MCH-R

    CABLE CHR/GOLD 90 CONN MONO 5'
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    DigiKey IO-IC109005-T2MCH-R Bulk 4 1
    • 1 $18.53
    • 10 $14.26
    • 100 $11.15
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    Mouser Electronics IO-IC109005-T2MCH-R
    • 1 $15.99
    • 10 $14.17
    • 100 $12.36
    • 1000 $10.54
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    Newark IO-IC109005-T2MCH-R Bulk 4 1
    • 1 $8.47
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    RS IO-IC109005-T2MCH-R Bulk 2 1
    • 1 $16.16
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    TestEquity LLC IO-IC109005-T2MCH-R
    • 1 $12
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    Io Audio Technologies IO-IC109005-T2MCH

    CABLE CHR/GOLD STR CONN MONO 5'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IO-IC109005-T2MCH Bulk 2 1
    • 1 $18.18
    • 10 $13.992
    • 100 $10.9389
    • 1000 $8.8125
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    Mouser Electronics IO-IC109005-T2MCH
    • 1 $15.65
    • 10 $13.88
    • 100 $12.1
    • 1000 $10.32
    • 10000 $10.32
    		Get Quote
    Newark IO-IC109005-T2MCH Bulk 1
    • 1 $12.41
    • 10 $11.64
    • 100 $9.73
    • 1000 $9.52
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    RS IO-IC109005-T2MCH Bulk 7 1
    • 1 $18.54
    • 10 $17.25
    • 100 $15.58
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    TestEquity LLC IO-IC109005-T2MCH
    • 1 $11.75
    • 10 $11.75
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    C109 005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c109

    Abstract: c109 005
    Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-005 8224-7VRT/C109/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package


    Original     		PDF CDT2-822-005 8224-7VRT/C109/TR2-24 8224-7VRT/C109 30min transistor c109 c109 005

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147

    Untitled

    Abstract: No abstract text available
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4

    ATC100B4R3CW500X

    Abstract: PTVA035002EV V1
    Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA035002EV PTVA035002EV a035002 ATC100B4R3CW500X PTVA035002EV V1

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    TL244

    Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL235

    Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
    Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz


    Original     		PDF PTFB091507FH PTFB091507FH H-34288-4/2 16ubstances. TL235 LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081

    Untitled

    Abstract: No abstract text available
    Text: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features


    Original     		PDF PTAC210802FC PTAC210802FC 80-watt H-37248-4 c210802fc-gc

    Untitled

    Abstract: No abstract text available
    Text: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power ampliier applications in the 2110 to 2170 MHz frequency band. Features


    Original     		PDF PTAC210802FC PTAC210802FC 80-watt H-37248-4 c21080us

    Untitled

    Abstract: No abstract text available
    Text: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features


    Original     		PDF PTAC210802FC PTAC210802FC 80-watt H-37248-4 c210802fc-gc

    TL239

    Abstract: TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-34275-6/2 TL239 TL140 TL230 Tl141 TL249 TL142 TL235 TL-141 tl144 tl241

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    4871I

    Abstract: No abstract text available
    Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I

    ATC100B6R2CT500X

    Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt PTFB213208FV H-34275G-6/2 ATC100B6R2CT500X TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126

    Untitled

    Abstract: No abstract text available
    Text: PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. Its asymmetric and dual-path


    Original     		PDF PXAC201602FC PXAC201602FC 140-watt H-37248-4 10ubstances.

    Untitled

    Abstract: No abstract text available
    Text: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,


    Original     		PDF PTVA093002TC PTVA093002TC 300-watt 50-ohm

    br cornell dubilier

    Abstract: No abstract text available
    Text: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA104501EH PTVA104501EH H-33288-2 br cornell dubilier

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2