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    C114 TRANSISTOR Search Results

    C114 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C114 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for PIC32MX7 Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful PIC32MX795F512L microcontroller. TO OUR VALUED CUSTOMERS I want to express my thanks to you for being interested in our products and for having


    Original     		PIC32MX7Â PIC32MX795F512L PIC32Â PIC32 PIC32MX7 PDF

    FRD070IF40-A

    Abstract: FRD070IF40-A-T C-118
    Text: V mikromedia 7 for STM32F4 Amazingly compact, all-on-single-pcb development board carring 7” TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM Cortex -M4 family To our valued customers I want to express my thanks to you for being interested in our products and for


    Original     		STM32F4 STM32F407ZG STM32F4 STM32, STM32F4 FRD070IF40-A FRD070IF40-A-T C-118 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 PDF

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114 PDF

    Untitled

    Abstract: No abstract text available
    Text: mikromedia+ for STM32 ARM Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful STM32F407ZG microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		STM32 STM32F407ZG STM32, PDF

    C134 transistor

    Abstract: No abstract text available
    Text: mikromedia+ for Stellaris ARM® Amazingly compact, all-on-single-pcb development board carring 4.3’’ TFT Touch Screen and lots of multimedia peripherals, all driven by powerful LM4F232H5QD microcontroller from ARM® Cortex -M4 family TO OUR VALUED CUSTOMERS


    Original     		LM4F232H5QD C134 transistor PDF

    2N7002DICT-ND

    Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
    Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3


    Original     		TPS5210EVM-116 TPS5210EVM-116 SLVP116DB SLVP116DB2 TPS5210 2N7002DICT-ND 16SP270M schematic main board J102 fet 4SP820M T TPS5210 ECSH1CD226R capacitor 4700 uF 50V X7R murata PDF

    transistor c114 diagram

    Abstract: SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505 STA50X
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


    Original     		AN1994 STA50X STA500, STA505, STA506, STA508 transistor c114 diagram SWITCHING TRANSISTOR C114 transistor c114 digital transistor c114 AN1994 diode d1n4148 STA508 AN1965 STA505 PDF

    500w car audio amplifier circuit diagram

    Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary


    Original     		RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram PDF

    SWITCHING TRANSISTOR C114

    Abstract: transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 STA50X 100nF 63V polyester capacitor
    Text: AN1994 APPLICATION NOTE STA50X DIGITAL POWER FAMILY This applicationnote is related to the STA50X series of DDX high efficiency output stages. 1 PIN DESCRIPTION Table 1. STA500, STA505, STA506, STA508 Pin N’ Pin Name 1 GND_sub 2 OUT2B Output Half Bridge 2B


    Original     		AN1994 STA50X STA500, STA505, STA506, STA508 SWITCHING TRANSISTOR C114 transistor c114 diagram transistor c114 transistor c114 diagrams AN1994 transistor c114 chip ESR C114 transistor STA508 100nF 63V polyester capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S PDF

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109 PDF

    30w subwoofer circuit diagram

    Abstract: subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


    Original     		MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram transistor subwoofer circuit diagram subwoofer amplifier circuit diagram ACTIVE SUBWOOFER WITH AMP Active subwoofer circuit 2.1 channel subwoofer amplifier circuit diagram subwoofer preamplifier circuit 12v subwoofer amp circuits bass control in stereo 12v active subwoofer IC PDF

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239 PDF

    transistor c118

    Abstract: C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124
    Text: PTMA080304M Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use in cellular amplifier applications in the 700 to 1000 MHz frequency


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 a080304 transistor c118 C124 transistor transisTOR C123 transistor c114 diagram for C114 transistor transistor c114 transistor c117 587-1352-1-ND PM820 transistor C124 PDF

    J103 transistor

    Abstract: transistor c223
    Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced


    Original     		PTFB072707FH PTFB072707FH b072707fh-gr1 J103 transistor transistor c223 PDF

    2.1 channel subwoofer amplifier circuit diagram

    Abstract: transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR
    Text: Maxim > App Notes > Audio Circuits Keywords: audio, class-d, classd, amplifier, power, active filter, mp3, active eq, woofer, subwoofer, tweeter, 2.1 channel, high pass filter, parametric eq, sallen-key filter, speaker, speakers Feb 27, 2009 APPLICATION NOTE 4320


    Original     		MAX9736 com/an4320 MAX9736A: MAX9736B: AN4320, APP4320, Appnote4320, 2.1 channel subwoofer amplifier circuit diagram transistor subwoofer circuit diagram 30w subwoofer circuit diagram subwoofer preamplifier circuit diagram active subwoofer circuit diagram subwoofer filter circuit diagram ACTIVE SUBWOOFER WITH AMP npn TRANSISTOR c105 subwoofer box diagram c105 TRANSISTOR PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145 PDF

    transistor c114

    Abstract: C114 Transistor transistor c114 chip transistor c114 NPN C114 E S W transistor for C114 transistor NPN C114 C-114 c114 2N3442
    Text: 8368602 SOL ITRON DEVICES INC TS 95D 02905 D DE |fl3t.flb02 ODDSIDS 3 • “ [ ^ p y © ? ©ATTAIL© _ Devices, Inc. MEDIUM VOLTAGE CHIP N U M BER NPN SINGLE DIFFUSED MESA TRANSISTOR CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


    OCR Scan     		flb02 2N3442, 2N4348 C-114 transistor c114 C114 Transistor transistor c114 chip transistor c114 NPN C114 E S W transistor for C114 transistor NPN C114 C-114 c114 2N3442 PDF

    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7 PDF

    Untitled

    Abstract: No abstract text available
    Text: hrtemational IM ] Rectifier P D - 9.1040 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		IRGPC30FD2 10kHz) O-247AC C-116 SS452 PDF

    SWITCHING TRANSISTOR C114

    Abstract: C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e
    Text: P D - 9.1040 International iorJRectifier IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to


    OCR Scan     		10kHz) IRGPC30FD2 C-115 O-247AC SWITCHING TRANSISTOR C114 C114 E S W transistor C114 transistor C114 dt for C114 transistor transistor c114 e PDF

    IRF0020

    Abstract: IH02 IRFD020 k 3525 MOSFET transistor 1gs 10C1 C-111 C-113 IRFD022 irf002
    Text: HE D I 4ÖS5452 000â3fci2 -f" - *4 | Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R IRFDOSO IRFDOSS HEXFET TRANSISTORS N-CHANNEL HEXDIP’" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		s5452 c-116 IRF0020 IH02 IRFD020 k 3525 MOSFET transistor 1gs 10C1 C-111 C-113 IRFD022 irf002 PDF