MTD3302
Abstract: CS5323 SC1205 D518 VCC74 0.01U 74 c23
Text: 19 13 L1 300N C13 540U 33 34 RCORE 1K X_U1 SC1205 DRN Gate1 R1 10 V5IN Resr1 1.5M X_Q1 MTD3302 Resr0 0.04 14 V12IN 22 C4 1.0U D1 C5 1.0U V_BUS 19 44 1 1 PGND TG BST BG VS CO EN 23 L2 850N Vcc 15 COMP 4 4 R10 8K C11 2N R6 7.5K C14 0.1U IC = 2.2 5 Gate2 ROSC
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SC1205
MTD3302
V12IN
CS5323
MTD3302
CS5323
SC1205
D518
VCC74
0.01U
74 c23
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TRANSISTOR 58050
Abstract: 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor LXF Series REGULATOR IC V17 specifications of 24 volt stepdown transformer LXF CAPACITORS dc-dc stepdown converter 12 to 5v 3a
Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION
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L4985
L4985D
TRANSISTOR 58050
58050
3 pin TRANSISTOR 58050
58050 3 pin transistor
58050 transistor
LXF Series
REGULATOR IC V17
specifications of 24 volt stepdown transformer
LXF CAPACITORS
dc-dc stepdown converter 12 to 5v 3a
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TRANSISTOR 58050
Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
Text: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION
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L4985
L4985D
TRANSISTOR 58050
3 pin TRANSISTOR 58050
58050 3 pin transistor
58050 transistor
byv 32 diode
BYV 88 800
ByV schottky
L4985
L4985D
SO20
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Hitachi DSA002779
Abstract: 2SK410
Text: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry
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2SK410
D-85622
Hitachi DSA002779
2SK410
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DIODE GOC 63
Abstract: g85 wafer diode S334 db3 x044 s217 diode dB06 diode TFT 65K colors 128 x 160 pixels diode s199 s394 54175
Text: ST Sitronix ST7712 262K Color Single-Chip TFT Controller/Driver 1. Introduction The ST7712 is a single-chip which generates 396 Source lines and 132 gate lines controller/driver for 262K color TFT dot graphic display. ST7712 support 18-bit high-speed bus interface and Serial Peripheral Interface SPI , thus it can perform
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ST7712
ST7712
18-bit
132x396x6
DIODE GOC 63
g85 wafer
diode S334
db3 x044
s217 diode
dB06 diode
TFT 65K colors 128 x 160 pixels
diode s199
s394
54175
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toshiba lcd power board schematic
Abstract: C1608X7R2A102K 24v charge regulator C1N27 DC to DC regulator with 24v ,10A output regulator C1608X5R0J106M C1608X7R1H104K MAX8753 MAX8753EVKIT UMK107BJ104KA
Text: 19-0503; Rev 0; 3/06 MAX8753 Evaluation Kit The MAX8753 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that generates the voltages required for active-matrix, thin-film transistor (TFT) liquid-crystal displays (LCDs). The EV kit contains a pulse-width-modulated (PWM) step-up switching regulator (VMAIN), positive and negative chargepump regulators (OUTP and OUTN) for the TFT gate
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MAX8753
160mA
MAX8753
toshiba lcd power board schematic
C1608X7R2A102K
24v charge regulator
C1N27
DC to DC regulator with 24v ,10A output regulator
C1608X5R0J106M
C1608X7R1H104K
MAX8753EVKIT
UMK107BJ104KA
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HD66775
Abstract: No abstract text available
Text: —PRELIMINARY— HD66775 120-Channel Gate Driver for Color-TFT Liquid Crystal Displays Rev.0.3 September 2001 Description HD66775 is a gate-driver IC for systems with color-TFT-liquid-crystal dot-matrix graphic displays. It incorporates a circuit for driving 120 channels of TFT gate lines, and realizes the liquid crystal
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HD66775
120-Channel
HD66775
HD66775s
HD66770
396-channel
HD667P00
HD66772
528-channel
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PRTR5VOU4D
Abstract: loop powered galvanic isolator "Digital Comparators" 106V ltc6802 LTC6802-1 P0544NL transistor npn 500v LTC6801 NC7WZ17
Text: LTC6801 Independent Multicell Battery Stack Fault Monitor Features Description n n n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and
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LTC6801
12-bit
LTC6801
LTC6802-1
LTC6802-1
LTC6802-2
LTC6802-1:
LTC6802-2
6801f
PRTR5VOU4D
loop powered galvanic isolator
"Digital Comparators"
106V
ltc6802
P0544NL
transistor npn 500v
NC7WZ17
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LTC6801G
Abstract: PRTR5VOU4D 106V CMHD457 P0544NL LTC6802-1 LT6003 LTC6801 LTC6802 LTC6802-2
Text: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES DESCRIPTION n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and
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LTC6801
12-bit
LTC6801
LTC6802-1
LTC6802-1
LTC6802-2
LTC6802-1:
LTC6802-2
6801fb
LTC6801G
PRTR5VOU4D
106V
CMHD457
P0544NL
LT6003
LTC6802
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LTC6801G
Abstract: LTC6802-2 LT6003 LTC6801 LTC6802 zener diode ltc 4211 G13 LTC6802-1
Text: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES DESCRIPTION n The LTC 6801 is a multicell battery monitoring IC incorporating a 12-bit ADC, a precision voltage reference, sampled comparator, and a high voltage input multiplexer. The LTC6801 can monitor as many as 12 series connected battery cells for overvoltage, undervoltage, and
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LTC6801
12-bit
LTC6801
LTC6802-1
LTC6802-1
LTC6802-2
LTC6802-1:
LTC6802-2
6801fa
LTC6801G
LT6003
LTC6802
zener diode ltc 4211 G13
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LTC6802-2
Abstract: LTC6802-1
Text: LTC6801 Independent Multicell Battery Stack Fault Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Monitors Up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables > 1000V Systems 1% Maximum Overvoltage Detection Level Error Adjustable Overvoltage and Undervoltage
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LTC6801
36-Lead
LTC6802-1
LTC6802-1
LTC6802-2
LTC6802-1:
LTC6802-2
6801fb
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180uf 200 v capacitor
Abstract: ADP1821 CRCW06033001F 680uF 4v IRFR3711Z M200 MMBT2222 20SP180M BAT54 BZX84C5V6
Text: Evaluation Board for 20 A Step-Down DC-to-DC Controller EVAL-ADP1821 clock at any frequency between 300 kHz and 1.2 MHz. The internal gate drivers control an all N-channel power stage to regulate a converter output voltage as low as 0.6 V with up to 20 A load current.
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EVAL-ADP1821
ADP1821
VJ0603Y223KXXA
VJ0603Y104MXQ
VJ0603Y2R2KXXA
VJ0603Y102KXXA
VJ0603Y182KXXA
VJ0603Y180KXXA
BZX84C5V6
180uf 200 v capacitor
CRCW06033001F
680uF 4v
IRFR3711Z
M200
MMBT2222
20SP180M
BAT54
BZX84C5V6
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dv4 mosfets
Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its
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AN7254
RFM10N15
RFM10N15L.
dv4 mosfets
C12 IC GATE
CA3240E
DEPLETION MOSFET
Harris Semiconductor jfet
mos die
mosfet cross reference
n channel depletion MOSFET
2N4036
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AN-556
Abstract: 4N25 AN556 BYT11-1000 BZX85C20 L6353 STW20NA50
Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface
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AN556
L6353:
L6353
AN-556
4N25
AN556
BYT11-1000
BZX85C20
STW20NA50
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AN-556
Abstract: AN556 application note 100uf25v scr power control schematic TN197 L6353 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25
Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface
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AN556
L6353:
L6353
AN-556
AN556 application note
100uf25v
scr power control schematic
TN197
BRIDGE-RECTIFIER 8a
IGBT DRIVER SCHEMATIC chip
SCR Inverter datasheet
4N25
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transistor E101
Abstract: transistor c32
Text: MPT57216 192-CHANNEL COLOR TFT COLUMN SOURCE DRIVER SGLS092 – MARCH 1997 192 OUT0 OUT3 OUT13 OUT181 OUT183 OUT189 D D D D Clock-Control Circuit Conserves Power Consumption Power Supply Voltage of 5 V ±10% High-Voltage CMOS SI Gate Technology 231-Pin TAB (Tape Automated Bonding)
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MPT57216
192-CHANNEL
SGLS092
OUT13
OUT181
OUT183
OUT189
231-Pin
MPT57206
OUT11
transistor E101
transistor c32
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SMD 47UF/SN74AHC138
Abstract: No abstract text available
Text: Application Note 1826 Author: Richard Kroeger ISL9520EVAL1Z Evaluation Board Setup Procedure The ISL9520 is a highly integrated Narrow VDC regulator/battery charger controller for Li-ion/Li-ion polymer batteries. It has an SMBus interface and provides gate drive to
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ISL9520EVAL1Z
ISL9520
AN1826
SMD 47UF/SN74AHC138
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AN-7501
Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the
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100nm
AN-7501
CA3240E
dv4 mosfets
CA3280
RFM10N15
RFM10N15L
RFM15N15
2N4036
P-channel 200V mos fet
ca3240
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100 amp 1000 volt GTO
Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard
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100nm
100 amp 1000 volt GTO
AN-7501
CA3280
vertical JFET
p channel depletion mosfet
2N4036
AN75
CA3240E
RFM10N15
RFM10N15L
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laser diode spice model simulation
Abstract: Gigabit Logic
Text: TEKTRONIX INC/ TRI 2UINT 2bE 1 Bl ÖTObHlfl DDÜGSQ7 7 HITRÛ ' T - q ’i - l S [(È lB ÏL J G ig a B it L o g ic 16G020 Programmable Single Gate GaAs D-MESFET Array FEATURES • 11 single gate depletion MESFETs on each chip • f t = 22 GHz typical frequency response
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16G020
050P3
laser diode spice model simulation
Gigabit Logic
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI ÛUINT 2bE D B Ô^GbSlû G O D D S n 3 O T R Ö [ È S S I] G ig a B it L o g ic 16G021 Programmable Dual Gate GaAs D-MESFET Array FEATURES • • • • • • >Available with personalized interconnects in the package for design integration and improved
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16G021
050P3
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICO ND UCTOR INC 02 D E « 7 ^ 4 1 4 5 DDDSbSfl 3 I 558 KS5113 D ; CMOS DIGITAL INTEGRATED CIRCUIT 3 HAND LCD ANALOG WATCH The KS5113 Is asilicon-gate CMOS LSI for 3-HAND analog LCD display watch. It provides three functions HOUR, MINUTE, SECOND .
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KS5113
KS5113
768Hz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TMM411001C-10 TMM411001C-12 1 ,0 48 ,5 7 6 WORD X 1 BIT DYNAMIC RAM SILICO N MONOLITHIC N -C H A N N EL SILICO N GATE MOS PRELIMINARY DESCRIPTION bit densities and is co m p a tib le w ith w id e ly available a u to m ated te stin g and inse rtio n e q u ip m e n t. System
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TMM411001
TMM411001C-10
TMM411001C-12
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Diode KD 514
Abstract: D05022P-473 LM2670 LM2670S-12 LM2670S-ADJ 332C2 Yl38 yl-38 D05022P-683
Text: & Semiconductor LM2670 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator with Sync General Description Features The LM 2670 series of regulators are m onolithic integrated circuits which provide all of the active functions fo r a step-dow n buck sw itching regulator capable of driving up to
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LM2670
LM2670
Diode KD 514
D05022P-473
LM2670S-12
LM2670S-ADJ
332C2
Yl38
yl-38
D05022P-683
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