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    RFM10N15 Price and Stock

    Harris Semiconductor RFM10N15L

    10A, 150V, 0.3ohm, N-Channel, POWER MOSFET '
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    Rochester Electronics RFM10N15L 109 1
    • 1 $2.28
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    • 100 $2.14
    • 1000 $1.94
    • 10000 $1.94
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    RFM10N15 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFM10N15 Intersil 10.0A, 120V and 150V, 0.300 ?, N-Channel Power MOSFET FN1445.2 Original PDF
    RFM10N15 General Electric (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS Scan PDF
    RFM10N15 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Drain current RMS continuous 10A. Scan PDF
    RFM10N15 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N15 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM10N15 Intersil Obsolete Product Datasheet Scan PDF
    RFM10N15 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM10N15 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM10N15L General Electric N-channel logic level power field-effect transistor (LL FET). 150V, 10A. Scan PDF
    RFM10N15L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM10N15L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFM10N15 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036

    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


    Original     		PDF 100nm AN-7501 CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		PDF 100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet

    100 amp 1000 volt GTO

    Abstract: AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note Pageode Useutines DRAIN CURRENT ID (A) VG = 9(4.5)V The reduction in gate drive voltage is the result of halving the thickness of the gate insulator from the industry standard


    Original     		PDF 100nm 100 amp 1000 volt GTO AN-7501 CA3280 vertical JFET p channel depletion mosfet 2N4036 AN75 CA3240E RFM10N15 RFM10N15L

    F10N12L

    Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
    Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)


    OCR Scan     		PDF RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L 92CS-3374I RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N12L F10N15L 10N15L F10N12 RFP10N15L F10N15 10n15

    M339

    Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
    Text: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi


    OCR Scan     		PDF 3fl75Dfll RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* switchin5081" M339 transistor m339 ta9192

    F10N15L

    Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
    Text: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level


    OCR Scan     		PDF 3fl75Dfil RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L* F10N15L F10N12L RCA SOLID STATE F10N12L F10N12 F10N15 TA9530

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 TA09192. RFM10N12 T0-204AA RFM10N12 RFM10N15 TB334 RFP10N12 AN7254 RFP10N15 TB-334

    ta9192

    Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
    Text: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* ta9192 RFP10N15

    10n12

    Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
    Text: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V


    OCR Scan     		PDF RFM10N12, RFM10N15, RFP10N15 RFM10N12 RFM10N15 RFP10N12 RFP10N15* RFP10M12, 10n12 92CS-3780I ta9192 RFM1 RFP mosfets ta9212 A9212

    RFL10N15

    Abstract: 330 e57
    Text: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni


    OCR Scan     		PDF 0N15D Mii-Std-750, RFM10N15 RFP10N15 RFL10N15 PCF10N15W PCF10N15D 122x122 1-800-4-HARRIS RFL10N15 330 e57

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    10N15

    Abstract: 10N12 rfm10n rfp10n12
    Text: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF RFM10N12/10N15 RFP10N12/10N15 T0-204AA RFM10N12 RFM10N15 RFP10N12 RFP10N15 AN-7254 AN-7260 10N15 10N12 rfm10n

    RFM1

    Abstract: L92C
    Text: HARIRIS R FM 10N 12/10N 15 RFP10N12/1 ON 15 N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Packages Features • TO-204AA 10A, 1 2 0V and 1 5 0V • rD S on = 0 .3 ÎÏ • S O A is P ow er-D issip atlo n Lim ited • N anosecond S w itching S peeds


    OCR Scan     		PDF 12/10N RFP10N12/1 O-204AA RFM10N12 RFM10N15 RFP10N12 RFP10N15 RFM1 L92C

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    F12N10L

    Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
    Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF RFM10N12L/15L RFP10N12L/15L RFM10N12L RFM10N15L RFP10N12L RFP10N15L RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L F12N10L f12N08L f12n08 f12n10 RFM12N08L RFM12N10L

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    10N15L

    Abstract: No abstract text available
    Text: 4302271 QDS 4 7 5 5 T4 1 • HAS R FM 10 N 12L /15L R FP10N 12L /15L H a r r is N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • 10A, 120V and 150V • rDS(ON) = 0-3H SOURCE f • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF FP10N RFM10N12L RFM10N15L RFP10N12L 10N12L, 10N15L, RFP10N12L, RFP10N15L 92CS-376S4 AN7254 10N15L