J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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J161 mosfet transistor
Abstract: MOSFET J161 100B6R8JW
Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS03-070RFPP
DS02-276RFPP)
J161 mosfet transistor
MOSFET J161
100B6R8JW
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mosfet 1412
Abstract: No abstract text available
Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
DS03-202RFPP
mosfet 1412
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-007RFPP
DS03-059RFPP)
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AGR21045EF
Abstract: AGR21045XF JESD22-C101A
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
DS04-241RFPP
DS04-178RFPP)
AGR21045XF
JESD22-C101A
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100B100JW500X
Abstract: AGR09090EF JESD22-C101A
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
AGR09090EF
DS04-058RFPP
DS04-029RFPP)
100B100JW500X
JESD22-C101A
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SBR2U30P1
Abstract: No abstract text available
Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a
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AL8806
AL8806
DS35144
SBR2U30P1
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AGR21030EF
Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A
Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21030EF
AGR21030EF
1030EF
AGR21030XF
21045F
12-digit
2.4 ghz mosfet
AGR21030XF
JESD22-C101A
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"RF Power Transistor"
Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
AGR18030EF
21045F
"RF Power Transistor"
JESD22-C101A
transistor equivalent table 557
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Untitled
Abstract: No abstract text available
Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Pin Assignments Description MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a
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AL8806
AL8806
DS35144
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J964
Abstract: AGR21045EF AGR21045XF JESD22-C101A
Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
CGR21045EF
AGR21045XF
21045F
12-digit
J964
AGR21045XF
JESD22-C101A
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C20 CT
Abstract: 100B220 sprague CT series
Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
C20 CT
100B220
sprague CT series
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12v transformer
Abstract: 0R089 capacitor 470uf 25v diode 51X 25ZLH470M NPIS64 AL8806MP8-13 capacitor 470uF SBR2U30P1
Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a
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AL8806
AL8806
DS35144
12v transformer
0R089
capacitor 470uf 25v
diode 51X
25ZLH470M
NPIS64
AL8806MP8-13
capacitor 470uF
SBR2U30P1
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ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP
Abstract: 25ZLH470M
Text: AL8806 HIGH EFFICIENCY 36V 1.5A BUCK LED DRIVER Description Pin Assignments MSOP-8EP SET GND GND CTRL Maximum output current of AL8806 is set via an external resistor connected between the VIN and SET input pins. Dimming is achieved by applying either a DC voltage or a
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AL8806
AL8806
DS35144
ELECTRONIC TRANSFORMER FOR A 12V HALOGEN LAMP
25ZLH470M
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sm 4500
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless
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AGR21125E
AGR21125EU
AGR21125EF
DS03-037RFPP
DS03-012RFPP)
sm 4500
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045EU
AGR21045EF
DS02-380RFPP
DS02-276RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution
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AGR09090EF
Hz--960
DS04-134RFPP
DS04-068RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS04-018RFPP
DS03-070RFPP)
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR18090E
Characteristic10-12,
DS04-033RFPP
DS02-326RFPP)
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J299
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS04-059RFPP
DS04-018RFPP)
J299
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PDF
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Johanson Technology
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09090EF
Hz--960
DS04-029RFPP
DS04-005RFPP)
Johanson Technology
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926 sprague
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-057RFPP
DS04-027RFPP)
926 sprague
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced
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AGR09070EF
Hz--960
AGR09070EF
DS04-027RFPP
DS04-007RFPP)
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AL8806
Abstract: PowerDI-123 electronic transformer halogen 12v capacitor 470uf 25v NMC1206X7R104K50TRPF 0R082 B140 B240 DFLS230LH 0R089
Text: AL8806 HIGH EFFICIENCY 30V 1.5A BUCK LED DRIVER Pin Assignments The AL8806 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in series from a voltage source of 6V to 30V. The AL8806
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AL8806
AL8806
DS35144
PowerDI-123
electronic transformer halogen 12v
capacitor 470uf 25v
NMC1206X7R104K50TRPF
0R082
B140
B240
DFLS230LH
0R089
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