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    C1206C103K1RACTU Price and Stock

    KEMET Corporation C1206C103K1RACTU

    CAP CER 10000PF 100V X7R 1206
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    DigiKey C1206C103K1RACTU Cut Tape 59,357 1
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    C1206C103K1RACTU Digi-Reel 59,357 1
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    C1206C103K1RACTU Reel 56,000 4,000
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    Avnet Americas C1206C103K1RACTU Reel 261,500 15 Weeks 2,500
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    C1206C103K1RACTU Reel 15 Weeks 2,500
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    C1206C103K1RACTU Reel 15 Weeks 2,500
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    Mouser Electronics C1206C103K1RACTU 158,047
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    Newark C1206C103K1RACTU Cut Tape 664 1
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    C1206C103K1RACTU Reel 4,000
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    RS C1206C103K1RACTU Bulk 4,000
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    C1206C103K1RACTU Bulk 4,000
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    Bristol Electronics C1206C103K1RACTU 12,824
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    C1206C103K1RACTU 4,696
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    Quest Components C1206C103K1RACTU 11,951
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    C1206C103K1RACTU 3,200
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    C1206C103K1RACTU 2,532
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    C1206C103K1RACTU 2,517
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    C1206C103K1RACTU 2,512
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    C1206C103K1RACTU 2,203
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    TME C1206C103K1RACTU 11,782 1
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    NexGen Digital C1206C103K1RACTU 155
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    Avnet Asia C1206C103K1RACTU 74 Weeks 1
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    C1206C103K1RACTU 48 Weeks 16,000
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    Chip-Germany GmbH C1206C103K1RACTU 648
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    KEMET Corporation C1206C103K1RAC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206C103K1RAC 35,579
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    KEMET Corporation C1206C103K1RAC7800

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 0.01uF X7R 1206 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics C1206C103K1RAC7800 1,266
    • 1 $0.11
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    TTI C1206C103K1RAC7800 Reel 170,000 2,500
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    C1206C103K1RACTU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C1206C103K1RACTU KEMET CAP 0.01UF 100V 10% X7R SMD-1206 TR-7-PL SN-NIBAR Original PDF
    C1206C103K1RACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 10000PF 100V X7R 1206 Original PDF

    C1206C103K1RACTU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1206C103K1RACTU C1206C103K1RAC7800 Capacitor, ceramic, 0.01 uF, +/-10% Tol, 100V, X7R, 1206 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


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    C1206C103K1RACTU C1206C103K1RAC7800) e4a96b6f-afa9-4044-ad7d-80943e2c3417 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE


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    PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    PDF

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 PDF

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


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    HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB PDF

    mode 5 IFF

    Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 PDF

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


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    T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd PDF

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


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    HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S PDF

    Untitled

    Abstract: No abstract text available
    Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com


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    HVV1011-300 HVV1011-300-EK 100B101JP500X J153-ND FXT000158 3-252510RS3394 P242393 SCAS-0440-08C ZSLW-004-M SCAS-0440-12M PDF

    C1210C104K5RACTU

    Abstract: C0603C105K8PACTU
    Text: 1805-2012.qxp:QuarkCatalogTempNew 9/18/12 2:52 PM Page 1805 21 Ceramic Chip Capacitors RoHS Stock No. X7R Stock No. Mfr.’s Type Cap. pF EACH Volt. Tol. (%) 1-49 50-99 10 10 10 10 10 10 10 10 10 10 10 .35 .27 10 .06 .04 10 .06 .02 10 .43 .36 10 .40 .38


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    7009ACTU/BKN C1210C106Z4VACTU/BKN C0603C104M3VACTU/BKN C0603C104Z3VACTU/BKN C0603C224Z3VACTU/BKN C0603C334Z3VACTU/BKN C0805C105Z3VACTU/BKN C0805C104Z5VACTU/BKN C0805F104K5RACTU C1206F105K5RACTU C1210C104K5RACTU C0603C105K8PACTU PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


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    T2G6001528-Q3 T2G6001528-Q3 TQGaN25 PDF

    GROUND BASED RADAR

    Abstract: transistor SMD R1D
    Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications


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    HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D PDF

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS PDF

    j152

    Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
    Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7 PDF

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


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    HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102 PDF

    18w transistor

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


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    T2G6001528-Q3 T2G6001528-Q3 TQGaN25 18w transistor PDF

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


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    000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR PDF

    Untitled

    Abstract: No abstract text available
    Text: EVALUATION KIT >LL' '*#'*&#;A RF Power Transistor Part Number: HVV1214-140 Evaluation Kit Part Number: HVV1214-140-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram


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    HVV1214-140 HVV1214-140--EK C1206C103K1RACTU PCE3479CT-ND PCE3483CT-ND ERJ8GEYJ100V ERJ8GEYJ102V 5919CC-TB-7 J151-ND J152-ND PDF

    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


    Original
    T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original
    T2G6001528-Q3 T2G6001528-Q3 TQGaN25 PDF