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    C17 DUAL MOS Search Results

    C17 DUAL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    C17 DUAL MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull


    Original     		PDF MRF177/D MRF177 MRF177M 400part. MRF177 MRF177/D*

    9601 TO 220

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 9601 TO 220

    350 pf variable capacitor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 350 pf variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    MRF9060MB

    Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060MR1 MRF9060MBR1 MRF9060MB 93F2975 A04T-5 a113 bolt c17 dual mos 95F786

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1

    MRF9060MR1

    Abstract: 93F2975
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060MR1 MRF9060MBR1 93F2975

    945 mosfet n

    Abstract: 93F2975 c17 dual mos 9450 transistor 52169
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it


    Original     		PDF MRF9060MBR1 945 mosfet n 93F2975 c17 dual mos 9450 transistor 52169

    MRF9045MBR1

    Abstract: MRF9045MR1 6020G
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G

    RF3-50

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1/D RF3-50

    12v to 3.7v converter 2a

    Abstract: TI5001C TL5001 TL5001A ESR220M0K1516 576802B04000 HIP5011 HIP5016 1000uF 63v
    Text: The Intersil SynchroFET Dual Converter Using the HIP5016 Application Note May 1996 AN9613 Author: David Hamo Introduction TOP The most recent upgrade microprocessors require separate supplies for the processor core and the I/O logic. Development of the Intersil SynchroFET dual converter


    Original     		PDF HIP5016 AN9613 12v to 3.7v converter 2a TI5001C TL5001 TL5001A ESR220M0K1516 576802B04000 HIP5011 HIP5016 1000uF 63v

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1

    A113

    Abstract: MRF9045MBR1 MRF9045MR1
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.


    Original     		PDF MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1

    44F3360

    Abstract: 93F2975
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1

    A113

    Abstract: MRF9060MBR1 MRF9060MR1 95F786
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 A113 MRF9060MBR1 95F786

    93F2975

    Abstract: transistor WB1
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    Dale R015F resistor

    Abstract: dale r025f WSL-2512-R015-F Dale R015F MIC4452BM r020f B130 transistors lm4040cim3-1.2 liteon inverter 16v 150uF tantalum capacitor
    Text: MIC2182 C D G IRCUIT ESIGN UIDE The World’s Most Versatile Synchronous Buck Converter Features Micrel’s MIC2182 synchronous buck regulator offers high efficiency dc/dc conversion suitable for multitude of applications. With its all n-channel synchronous


    Original     		PDF MIC2182 MIC2182 015-F MIC2182BM MIC4452BM M-0283 Dale R015F resistor dale r025f WSL-2512-R015-F Dale R015F MIC4452BM r020f B130 transistors lm4040cim3-1.2 liteon inverter 16v 150uF tantalum capacitor

    RF-35-0300

    Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D

    A113

    Abstract: MRF9060MBR1 MRF9060MR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1

    2272 t4

    Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent