C17 DUAL MOS Search Results

C17 DUAL MOS Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL

C17 DUAL MOS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull	Original	MRF177/D MRF177 MRF177M 400part. MRF177 MRF177/D*	PDF
9601 TO 220 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 9601 TO 220	PDF
350 pf variable capacitor Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1) 350 pf variable capacitor	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)	PDF
MRF9060MB Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060MR1 MRF9060MBR1 MRF9060MB 93F2975 A04T-5 a113 bolt c17 dual mos 95F786	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1	PDF
MRF9060MR1 Abstract: 93F2975 Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9060MR1 MRF9060MBR1 93F2975	PDF
945 mosfet n Abstract: 93F2975 c17 dual mos 9450 transistor 52169 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it	Original	MRF9060MBR1 945 mosfet n 93F2975 c17 dual mos 9450 transistor 52169	PDF
MRF9045MBR1 Abstract: MRF9045MR1 6020G Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G	PDF
RF3-50 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1/D RF3-50	PDF
12v to 3.7v converter 2a Abstract: TI5001C TL5001 TL5001A ESR220M0K1516 576802B04000 HIP5011 HIP5016 1000uF 63v Text: The Intersil SynchroFET Dual Converter Using the HIP5016 Application Note May 1996 AN9613 Author: David Hamo Introduction TOP The most recent upgrade microprocessors require separate supplies for the processor core and the I/O logic. Development of the Intersil SynchroFET dual converter	Original	HIP5016 AN9613 12v to 3.7v converter 2a TI5001C TL5001 TL5001A ESR220M0K1516 576802B04000 HIP5011 HIP5016 1000uF 63v	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1	PDF
A113 Abstract: MRF9045MBR1 MRF9045MR1 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9045MR1 MRF9045MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MR1 A113 MRF9045MBR1	PDF
44F3360 Abstract: 93F2975 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9045MR1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	MRF9045MR1 MRF9045NR1 MRF9045NBR1 MRF9045MBR1	PDF
A113 Abstract: MRF9060MBR1 MRF9060MR1 95F786 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 A113 MRF9060MBR1 95F786	PDF
93F2975 Abstract: transistor WB1 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D 93F2975 transistor WB1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D	PDF
Dale R015F resistor Abstract: dale r025f WSL-2512-R015-F Dale R015F MIC4452BM r020f B130 transistors lm4040cim3-1.2 liteon inverter 16v 150uF tantalum capacitor Text: MIC2182 C D G IRCUIT ESIGN UIDE The World’s Most Versatile Synchronous Buck Converter Features Micrel’s MIC2182 synchronous buck regulator offers high efficiency dc/dc conversion suitable for multitude of applications. With its all n-channel synchronous	Original	MIC2182 MIC2182 015-F MIC2182BM MIC4452BM M-0283 Dale R015F resistor dale r025f WSL-2512-R015-F Dale R015F MIC4452BM r020f B130 transistors lm4040cim3-1.2 liteon inverter 16v 150uF tantalum capacitor	PDF
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D	PDF
A113 Abstract: MRF9060MBR1 MRF9060MR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1	PDF
2272 t4 Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent	PDF

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C17 DUAL MOS Search Results

C17 DUAL MOS Result Highlights (5)

C17 DUAL MOS Datasheets Context Search

Untitled

9601 TO 220

350 pf variable capacitor

Untitled

MRF9060MB

Untitled

MRF9060MR1

945 mosfet n

MRF9045MBR1

RF3-50

12v to 3.7v converter 2a

Untitled

A113

44F3360

Untitled

A113

93F2975

Untitled

Untitled

Dale R015F resistor

RF-35-0300

Untitled

A113

2272 t4