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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3

    MRF9030MBR1

    Abstract: MRF9030MR1 100B7R5JP
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP

    RF-35-0300

    Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors


    Original     		PDF MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1

    rf push pull mosfet power amplifier

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier

    RF-35-0300

    Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9060 MRF6S9060NR1/NBR1. MRF6S9060MR1 MRF6S9060MBR1 MRF6S9060MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D

    93F2975

    Abstract: Motorola 305
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H

    MRF9060

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 MRF9060 MRF9060LSR1 MRF9060S 9600MHz

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    rf push pull mosfet power amplifier

    Abstract: MRF9120 MRF9120LR3 marking WB4
    Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 rf push pull mosfet power amplifier MRF9120 MRF9120LR3 marking WB4

    MRF6S9045MR1

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1

    KME63VB471M12x25LL

    Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3

    MRF9060

    Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE


    Original     		PDF

    A113

    Abstract: MRF9060NBR1 MRF9060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060N MRF9060NR1 MRF9060NBR1 MRF9060NR1 A113 MRF9060NBR1

    MRF9120

    Abstract: MRF9120LR3
    Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3

    MRF9030MBR1

    Abstract: MRF9030MR1
    Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 DEVICEMRF9030M/D MRF9030MBR1

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120S

    44F3360

    Abstract: 93F2975
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975

    MRF9135LSR3

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9135L Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135L MRF9135LR3 MRF9135LSR3 MRF9135LSR3