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    MRF9060 Price and Stock

    Rochester Electronics LLC MRF9060MR1

    RF MOSFET 26V TO270-2
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    DigiKey MRF9060MR1 Bulk 980 10
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    Rochester Electronics LLC MRF9060NR1

    RF MOSFET LDMOS 26V TO270-2
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    DigiKey MRF9060NR1 Bulk 247 9
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    NXP Semiconductors MRF9060LR1

    RF MOSFET LDMOS 26V NI360
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    NXP Semiconductors MRF9060LR5

    RF MOSFET LDMOS 26V NI360
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    DigiKey MRF9060LR5 Reel 50
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    • 100 $39.439
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    NXP Semiconductors MRF9060NR1

    RF MOSFET LDMOS 26V TO270-2
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    DigiKey MRF9060NR1 Reel 500
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    Avnet Americas MRF9060NR1 Reel 4 Weeks 11
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    Find more MRF9060 price and stock on Findchips.com

    MRF9060 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRF9060 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9060 Freescale Semiconductor MRF9060LR1, MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9060 Motorola MRF9060, MRF9060S, MRF9060SR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9060LR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9060LR1 Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9060LR5 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360 Original PDF
    MRF9060LSR1 Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    MRF9060LSR1 Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9060LSR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9060M Freescale Semiconductor MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs Original PDF
    MRF9060MBR1 Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9060MBR1 Freescale Semiconductor 60W TO272 DUAL LEAD Original PDF
    MRF9060MBR1 Motorola 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Original PDF
    MRF9060MBR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9060MR1 Freescale Semiconductor 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET Original PDF
    MRF9060MR1 Freescale Semiconductor RF PWR FET 60W TO-270 Original PDF
    MRF9060MR1 Motorola 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Original PDF
    MRF9060MR1 Motorola RF Power Field Effect Transistor Original PDF
    MRF9060NBR1 Freescale Semiconductor RF Power Field Effect Transistors Original PDF
    MRF9060NBR1 Freescale Semiconductor 60W, 1GHZ, FET, TO-272N Original PDF

    MRF9060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF-35-0300

    Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360

    RF-35-0300

    Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L

    MRF9060l equivalent

    Abstract: MRF9060 equivalent MRF9060L
    Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Narrowband CDMA


    Original     		PDF MRF9060LR1 MRF9060LSR1 MRF9060l equivalent MRF9060 equivalent MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D

    93F2975

    Abstract: Motorola 305
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305

    MRF9060

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 MRF9060 MRF9060LSR1 MRF9060S 9600MHz

    ATC100B100JT500XT

    Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1

    MRF9060

    Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent

    A113

    Abstract: MRF9060NBR1 MRF9060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060N MRF9060NR1 MRF9060NBR1 MRF9060NR1 A113 MRF9060NBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1

    RF-35-0300

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S marking wb1 MRF9060L
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S marking wb1 MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1

    100B0R5BP

    Abstract: MRF9060L
    Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060 MRF9060LR1 MRF9060LSR1 100B0R5BP MRF9060L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies


    Original     		PDF MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D

    A113

    Abstract: MRF9060MBR1 MRF9060MR1
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1

    motorola MOSFET 935

    Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S MRF9060 MRF9060L
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060LSR1 MRF9060S MRF9060 MRF9060L

    pd 223

    Abstract: MARKING WB1 A113 MRF9060M MRF9060MBR1 MRF9060MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 pd 223 MARKING WB1 A113 MRF9060M MRF9060MBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 MRF9060MR1

    93F2975

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975

    motorola MOSFET 935

    Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S
    Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060 MRF9060LSR1 MRF9060S

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1

    MARKING WB1

    Abstract: ATC100B0R5BT500XT ATC100B470JT500XT MRF9060 MRF9060LR1 MRF9060S T491D106K035AT
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF9060 MRF9060LR1 MARKING WB1 ATC100B0R5BT500XT ATC100B470JT500XT MRF9060LR1 MRF9060S T491D106K035AT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060M/D MRF9060MR1 MRF9060MBR1

    MRF9060MR1

    Abstract: 93F2975
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060MR1 MRF9060MBR1 93F2975