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    KEMET Corporation T491D106K035AT

    CAP TANT 10UF 10% 35V 2917
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    DigiKey T491D106K035AT Digi-Reel 41,991 1
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    KEMET Corporation T491D106K035AT7280

    CAP TANT 10UF 10% 35V 2917
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    KEMET Corporation T491D106K035ATAUTO

    CAP TANT 10UF 10% 35V 2917
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    KEMET Corporation T491D106K035AT4081

    CAP TANT 10UF 10% 35V 2917
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    KEMET Corporation T491D106K035ATPLP1

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    T491D106K035AT Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T491D106K035AT KEMET Tantalum Capacitors, Capacitors, CAP TANT 10UF 35V 10% 2917 Original PDF
    T491D106K035AT KEMET Solid Tantalum Chip Capacitors / T491 Series - Precision Molded Chip; Capacitance [nom]: 10uF; Working Voltage (Vdc)[max]: 35V; Capacitance Tolerance: +/-10%; Dielectric: Tantalum, Solid; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-31; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 2.8mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500 Original PDF
    T491D106K035AT2478 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT24787027 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT24787622 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4062 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4068 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4069 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4081 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4100 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4118 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4119 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4160 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4165 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT42802478 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT42807027 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4380 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4513 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF
    T491D106K035AT4539 KEMET Capacitors - Tantalum Capacitors - CAP TANT 10UF 10% 35V 2917 Original PDF

    T491D106K035AT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GR331

    Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		N1200 TZ03Z2R3E169B00 TZ03Z050E169B00 TZ03Z070E169B00 TZ03Z100E169B00 TZ03T110E169B00 TZ03R200E169B00 TZ03R300E169B00 TZ03P450E169B00 GR331 en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 PDF

    air variable capacitor

    Abstract: LET9045C M243 365 pF variable capacitor
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		LET9045C 2002/95/EC LET9045C air variable capacitor M243 365 pF variable capacitor PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1


    Original     		MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 3, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 PDF

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi PDF

    AD250

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100N AD250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRFE6S9060N MRFE6S9060NR1 PDF

    LET9045f

    Abstract: 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045
    Text: LET9045F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		LET9045F 2002/95/EC LET9045F 2L TRANSISTOR M250 atc 11 capacitor 330 LET9045 PDF

    J266

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 1, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		MRF6V14300H MRF6V14300HR3 MRF6V14300HSR3 MRF6V14300H J266 PDF

    MRF6V10010NR4

    Abstract: AN1955 d2460 A03TK
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		MRF6V10010N MRF6V10010NR4 MRF6V10010NR4 AN1955 d2460 A03TK PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor, PDF

    ATC100B100JT500XT

    Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device


    Original     		MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1 PDF

    MMRF1019NR4

    Abstract: No abstract text available
    Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		MMRF1019N MMRF1019NR4 7/2014Semiconductor, MMRF1019NR4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25L MRFE6VS25LR5 PDF

    A114

    Abstract: AN1955 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
    Text: Freescale Semiconductor Technical Data MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9130HR3 MRF6S9130HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		MRF6S9130HR3/HSR3 MRFE6S9130HR3/HSR3. PCN12895 MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3 MRF6S9130H A114 AN1955 JESD22 MRF6S9130H MRF6S9130HSR3 PDF

    MRF6VP11KH

    Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical


    Original     		MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    T491A475K010AT

    Abstract: T491D686K016AT T491C106K016AT T491B226K016AT T491C105K050AT T491D335K050AT T491B156K010AT T491A225K010AT T491E477M010AT
    Text: 1798-2012.qxp:QuarkCatalogTempNew 9/18/12 2:38 PM Page 1798 Engineering Design Kits RoHS Tantalum Kits ᭤ Surface Mount Kits INTERCONNECT TEST & MEASUREMENT 21 Design Kits and Tantalum Chip Capacitors Stock No. Mfr.’s Type Capacitance Range Voltage Range


    Original     		PDF

    transistor j 127

    Abstract: No abstract text available
    Text: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 18.5 dB gain @ 960 MHz ■ POUT (@36V) = 70 W with 18.5 dB gain @ 960


    Original     		LET9045C 2002/95/EC LET9045C transistor j 127 PDF