BCW30
Abstract: C212
Text: SEMICONDUCTOR BCW30 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C2 1 2 Item Marking Description Device Mark C2 BCW30 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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Original
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BCW30
OT-23
BCW30
C212
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PDF
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CAT3604
Abstract: CAT3604HV4 MO-220
Text: CAT3604 4-Channel Regulated Charge Pump White LED Driver Description http://onsemi.com TQFN−16 HV4 SUFFIX CASE 510AE Applications • • • • • • February, 2010 − Rev. 1 LED4 C2+ GND CTR1 C2− C1+ C1− VIN CTR2 4 x 4 mm (Top View) MARKING DIAGRAMS
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Original
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CAT3604
TQFN-16
510AE
CAT3604HV4-T2
CAT3604HV4-GT2
CAT3604/D
CAT3604
CAT3604HV4
MO-220
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PDF
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VSO05561
Abstract: A7s marking diode
Text: BAV 99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV 99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT-323 Maximum Ratings Parameter Symbol
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Original
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VSO05561
EHA07181
OT-323
Oct-08-1999
EHB00078
EHB00075
VSO05561
A7s marking diode
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PDF
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BAV99T
Abstract: SC75
Text: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BAV99T
VPS05996
EHA07181
Jun-29-2001
EHB00078
EHB00075
BAV99T
SC75
|
PDF
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bav99w A7S
Abstract: BAV99W VSO05561
Text: BAV99W Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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BAV99W
VSO05561
EHA07181
OT323
Aug-20-2001
EHB00078
EHB00075
bav99w A7S
BAV99W
VSO05561
|
PDF
|
Marking a1s
Abstract: BAW56W VSO05561
Text: BAW56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type BAW56W Marking A1s 1 = C1 Pin Configuration 2 = C2 3 = A1/A2 Package SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
|
BAW56W
VSO05561
EHA07187
OT323
Jun-29-2001
EHB00093
EHB00090
Marking a1s
BAW56W
VSO05561
|
PDF
|
SC-75
Abstract: VPS05996
Text: BAV 99T Silicon Switching Diode Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV 99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC-75 Maximum Ratings Parameter
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Original
|
VPS05996
EHA07181
SC-75
Oct-08-1999
EHB00078
EHB00075
SC-75
VPS05996
|
PDF
|
BAV99S
Abstract: VPS05604
Text: BAV99S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Connected in series • Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99S A7s
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Original
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BAV99S
VPS05604
EHA07287
OT363
Jun-29-2001
EHB00078
EHB00075
BAV99S
VPS05604
|
PDF
|
BAV99U
Abstract: SC74
Text: BAV99U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Connected in series • Internal galvanic isolated diodes 3 in one package C1/A2 C2 A1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV99U A7s
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Original
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BAV99U
VPW09197
EHA07287
Jun-29-2001
EHB00078
EHB00075
BAV99U
SC74
|
PDF
|
VSO05561
Abstract: No abstract text available
Text: BAW 56W Silicon Switching Diode Array 3 • For high-speed switching applications • Common anode 2 A1/A2 3 1 1 2 C1 C2 VSO05561 EHA07187 Type Marking BAW 56W A1s Pin Configuration 1 = C1 2 = C2 Package 3 = A1/A2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
|
VSO05561
EHA07187
OT-323
Oct-08-1999
EHB00093
EHB00090
VSO05561
|
PDF
|
BAW56U
Abstract: SC74
Text: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration
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Original
|
BAW56U
VPW09197
EHA07288
Jun-29-2001
EHB00093
EHB00090
BAW56U
SC74
|
PDF
|
6A1 diode
Abstract: BAW56S VPS05604
Text: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s
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Original
|
VPS05604
EHA07288
OT-363
Oct-08-1999
EHB00093
EHB00090
6A1 diode
BAW56S
VPS05604
|
PDF
|
BAW56S
Abstract: 6A1 diode VPS05604
Text: BAW56S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Common anode Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56S A1s Pin Configuration
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Original
|
BAW56S
VPS05604
EHA07288
OT363
Jul-05-2001
EHB00093
EHB00090
BAW56S
6A1 diode
VPS05604
|
PDF
|
6A1 diode
Abstract: 7006S VPS05604
Text: BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking
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Original
|
70-06S
VPS05604
EHA07288
OT-363
EHB00042
EHB00043
EHB00044
EHB00045
Oct-07-1999
6A1 diode
7006S
VPS05604
|
PDF
|
|
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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Original
|
VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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PDF
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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Original
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
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Original
|
VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
|
PDF
|
VPS05604
Abstract: A7s marking diode
Text: BAV 99S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Connected in series Internal galvanic isolated diodes in one package C1/A2 C2 A1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 A1 C2 C1/A2 EHA07287 Type Marking BAV 99S A7s Pin Configuration
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Original
|
VPS05604
EHA07287
OT-363
Oct-08-1999
EHB00078
EHB00075
VPS05604
A7s marking diode
|
PDF
|
6A1 diode
Abstract: No abstract text available
Text: BAW 56U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Common anode Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration
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Original
|
VPW09197
EHA07288
SC-74
Oct-08-1999
EHB00093
EHB00090
6A1 diode
|
PDF
|
a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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Original
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
|
PDF
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6A1 diode
Abstract: BAS70-06S VPS05604
Text: BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S
|
Original
|
BAS70-06S
VPS05604
EHA07288
OT363
EHB00042
EHB00043
EHB00044
EHB00045
Jul-06-2001
6A1 diode
BAS70-06S
VPS05604
|
PDF
|
Untitled
Abstract: No abstract text available
Text: www.hammondmfg.com Modular Rack Cabinet System C2 Series Find detailed drawings online at: www.hammondmfg.com Data Communication Infrastructure Application Features Construction • The C2 Rack Cabinet Series provides users with a generous amount of flexibility for electronic, test and
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Original
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DC100
|
PDF
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2-20C8
Abstract: No abstract text available
Text: TYPE HA POLAR Case Code 2 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 3 Volts Cl C2 C3 C4 C5 C6 C7 C8 C9 4 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 6 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 10 Volts CO Cl CO Cl CO Cl CO Cl CO Cl CO Cl C2 C3 C4 C5 C6 C7 C8 C9 Subminiature, Leaded
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OCR Scan
|
47-2C0
HA10-2C6
HA15-2C7
HA22-2C8
HA68-2C9
SHA15-2N4
SHA47-2N5
SHA10-4N4
SHA33-4N5Â
SHA22-6N5
2-20C8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode
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OCR Scan
|
Q62702-A1030
OT-323
5B35bDS
BAV70W
flE35b05
012040D
|
PDF
|
