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    C2M0160120D Search Results

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    C2M0160120D Price and Stock

    Wolfspeed C2M0160120D

    SICFET N-CH 1200V 19A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C2M0160120D Tube 1,298 1
    • 1 $17.29
    • 10 $17.29
    • 100 $10.726
    • 1000 $17.29
    • 10000 $17.29
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    Mouser Electronics C2M0160120D 2,417
    • 1 $13.48
    • 10 $12.83
    • 100 $9.9
    • 1000 $9.37
    • 10000 $9.37
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    Verical C2M0160120D 780 30
    • 1 -
    • 10 -
    • 100 $9.101
    • 1000 $9.101
    • 10000 $8.831
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    C2M0160120D 170 6
    • 1 -
    • 10 $10.25
    • 100 $10.25
    • 1000 $10.25
    • 10000 $10.25
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    Arrow Electronics C2M0160120D 780 34 Weeks 30
    • 1 -
    • 10 -
    • 100 $9.101
    • 1000 $9.101
    • 10000 $8.831
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    Newark C2M0160120D Bulk 259 1
    • 1 $12.6
    • 10 $12.03
    • 100 $11.07
    • 1000 $10.71
    • 10000 $10.71
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    Bristol Electronics C2M0160120D 10,080
    • 1 -
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    C2M0160120D 3,422
    • 1 -
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    TME C2M0160120D 41 1
    • 1 $15.3
    • 10 $12.2
    • 100 $11.3
    • 1000 $11.3
    • 10000 $11.3
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    Richardson RFPD C2M0160120D 170 1
    • 1 $8.33
    • 10 $8.33
    • 100 $7.52
    • 1000 $7.52
    • 10000 $7.52
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    Cree, Inc. C2M0160120D

    POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 1200V, 0.196OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components C2M0160120D 30
    • 1 $15.915
    • 10 $11.9363
    • 100 $10.3448
    • 1000 $10.3448
    • 10000 $10.3448
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    C2M0160120D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C2M0160120D Cree FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 17.7A TO-247 Original PDF

    C2M0160120D Datasheets Context Search

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    C2M0160120D

    Abstract: No abstract text available
    Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF C2M0160120D O-247-3 C2M0160applications C2M0160120D

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 17.7 A CPM2-1200-0160B Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 160 mΩ N-Channel Enhancement Mode Features • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original     		PDF CPM2-1200-0160B CPM2-1200-0160B