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TDK Corporation C3216X7R2E104K160AA Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 250V 0.1uF X7R 10% T: 1.6mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C3216X7R2E104K160AA		57,182			1 $0.26 10 $0.112 100 $0.085 1000 $0.077 10000 $0.054	Buy Now
TTI	C3216X7R2E104K160AA	Reel	102,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.046	Buy Now
TDK Corporation C3216X7R2E104K160AM Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3216X7R2E104KST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	C3216X7R2E104K160AM		60			1 $0.32 10 $0.173 100 $0.104 1000 $0.077 10000 $0.063	Buy Now
TDK Corporation C3216X7R2E104KT0L0U
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Bristol Electronics	C3216X7R2E104KT0L0U		6,994			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	C3216X7R2E104KT0L0U		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TDK Corporation C3216X7R2E104KT TDKC3216X7R2E104KT - Tape and Reel (Alt: C3216X7R2E104KT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	C3216X7R2E104KT	Reel		143 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation C3216X7R2E104KT0LOU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	C3216X7R2E104KT0LOU		2,160			1 - 10 - 100 - 1000 - 10000 -	Get Quote

C3216X7R2E104KT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CKD310 Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201 Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series	Original		PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage	Original	MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1	PDF
c2012 TDK Abstract: C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor Text: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS	Original	C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] c2012 TDK C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor	PDF
atc100b6r2 Abstract: KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9170N MRF8S9170NR3 atc100b6r2 KME63VB471M12x25LL AN1955 MRF8S9170NR3 KME63VB471M	PDF
C3225Y5V1H106ZT Abstract: 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 MW7IC2220GNR1 MW7IC2220N A114 Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage	Original	MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT 4000 watts power amplifier circuit diagram ATC100B1R1JT500XT ATC100B8R2BT500XT ATC100B1R0JT500XT C3225Y5V1H106 J9000 A114	PDF
C3225Y5V1H106ZT Abstract: C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220GNR1 MW7IC2220N MW7IC2220NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 0, 9/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage	Original	MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 C3225Y5V1H106ZT C3216X7R2E104KT A114 A115 AN1977 AN1987 JESD22 MW7IC2220NBR1	PDF
J377 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9170N MRF8S9170NR3 J377	PDF
capacitor 100MF 100v Abstract: C3225X7R2A225KT5 C2012X7R2A223KT5 cc2220 CC2220 50V 1uF C4532X7R1E475KT MLCC CRACK C2012X8R1H683KT5 C3225X7R2A225 C2012X7R2E682 Text: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS	Original	C2012 CC0805] C3216 CC1206] C3225 CC1210] C4532 CC1812] C5750 CC2220] capacitor 100MF 100v C3225X7R2A225KT5 C2012X7R2A223KT5 cc2220 CC2220 50V 1uF C4532X7R1E475KT MLCC CRACK C2012X8R1H683KT5 C3225X7R2A225 C2012X7R2E682	PDF
CKCM25X7R Abstract: inside parts for plasma tv C4520X7R3D tdk c4532x5r0j107m C5750X7R1H106 CKG57NX7R2 CKG57NX7R1H C5750Y5V1H226 C1608X7R0J MLCC CRACK Text: TDK MLCC US Catalog Version B11 of TDK MLCC US Catalog                General Application, C Series …….………………………… 3 Mid Voltage Application, C Series ….….…………………. 75 High Voltage Application, C Series .…………………….105	Original		PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage	Original	MW7IC2220N MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1	PDF
ATC100B2R0BT500X Abstract: atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB Text: Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF8S9170NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9170N MRF8S9170NR3 ATC100B2R0BT500X atc100b6r8 ATC100B3R3 transistor j326 ATC100B4R7CT500X C5750JF1H226ZT CRCW12065R10 transistor J333 ATC100B6R8CT500X KME63VB	PDF