Rogers 4350
Abstract: HMC245QS16 HMC252QS24 sp8t rf switch PATH240
Text: v01.0404 HMC245QS16 GaAs MMIC SP3T NON-REFLECTIVE SWITCH, DC - 3.5 GHz Evaluation PCB List of Material Item Description J1 - J4 PC Mount SMA RF Connector J5 - J8 DC Pin C1 - C4 100 pF Capacitor, 0402 Pkg. C5 10k pF Capacitor, 0603 Pkg. U1 HMC245QS16 SP3T Switch
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HMC245QS16
HMC245QS16
Rogers 4350
HMC252QS24
sp8t rf switch
PATH240
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MLA-01122B-C4
Abstract: C4 MMIC schematic diagram receiver data circuit satellite
Text: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications
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MLA-01122B-C4
50-Ohm
MLA-01122B-C4
C4 MMIC
schematic diagram receiver data circuit satellite
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MLA-01122B-C4
Abstract: mmic instrumentation amplifier PCB layout
Text: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications
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MLA-01122B-C4
50-Ohm
MLA-01122B-C4
mmic
instrumentation amplifier PCB layout
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Capacitor 0.01 uF
Abstract: No abstract text available
Text: MAALSS0024 Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • V 1.00 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 Description L2 GND VDD C4
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MAALSS0024
OT-26
MAALSS0024
OT-26
Capacitor 0.01 uF
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capacitor 0.01 uF
Abstract: M513 MAALSS0024 MAALSS0024SMB-01 MAALSS0024SMB-02 MAALSS0024TR L2 sot26
Text: Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • MAALSS0024 V2 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 L2 Description GND VDD C4 RFOUT
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MAALSS0024
OT-26
MAALSS0024
capacitor 0.01 uF
M513
MAALSS0024SMB-01
MAALSS0024SMB-02
MAALSS0024TR
L2 sot26
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stripline filter
Abstract: BGA2012 TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz
Text: H High IP3 MMIC LNA at 1.8-2.4 GHz Application note for the BGA2012 The BGA2012 is a MMIC 50 Ω LNA block for cellular applications at 1.8 GHz to 2.4 GHz that require low noise, high gain and good linearity. Possible applications: • 1.8 GHz - DECT - gain 15 dB, low noise 1.7 dB, supply curent 4 mA
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BGA2012
BGA2012
OT363.
-------20mm------->
TDK0603
stripline filter
TDK0603
TRANSISTOR SMD nf c4
High IP3 MMIC LNA at 1.8-2.4 GHz
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MIXER SCHEMATIC DIAGRAM
Abstract: c4 ic rf amplifier
Text: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the
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HPMX-2006
AP060596A
MR102993A
MIXER SCHEMATIC DIAGRAM
c4 ic rf amplifier
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MP0402
Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)
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MP0001
MP0002
MP0003
MP0004
MP0005
MP0010
MP0015
MP0022
MP0033
MP0047
MP0402
MP0002
MP0010
MP0022
MP0033
C4 MMIC
MP0004
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MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
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Zener C212
Abstract: diode zener c71 zener ma 1150
Text: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features 18 dB Gain at 2000 MHz 32.5 dBm P1dB at 2000 MHz 49 dBm Output IP3 at 2000 MHz MTTF > 100 Years Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX621
ASX621,
Zener C212
diode zener c71
zener ma 1150
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Untitled
Abstract: No abstract text available
Text: AWT918 TX POWER MMIC Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800, GSM900/GSM1900 and
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AWT918
GSM900/DCS1800,
GSM900/GSM1900
AMPS/GSM1900.
PCS/GSM1900
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AH03L
Abstract: TAJB104KLRH m 213 exposed pad 5v mmic A MCH18 SXA-3318B TAJB106K020R 99c4
Text: Preliminary Product Description SXA-3318B Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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SXA-3318B
SXA-3318B
MPO-101644
3318B
EDS-103164
AH03L
TAJB104KLRH
m 213 exposed pad 5v
mmic A
MCH18
TAJB106K020R
99c4
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tk 1838
Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
Text: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V
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UPC8179TK
UPC8179TK-E3
tk 1838
h028
IC 7464 circuit
7492 IC CHIP
UPC8128TB
UPC8151TB
UPC8152TB
UPC8178TB
UPC8178TK
UPC8179TB
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
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Untitled
Abstract: No abstract text available
Text: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of
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AWG3020
AWG3020
AWG3020,
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SXA3318BZ
Abstract: TAJB104KLRH MCH18 SXA-3318B TAJB106K020R AM03M
Text: SXA-3318B SXA-3318BZ Product Description RoHS Compliant & Green Package Pb 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost
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SXA-3318B
SXA-3318BZ
SXA-3318B
digS-103164
-3318B
-3318B
SXA3318B"
SXA3318BZ"
MPO-101644
EDS-103164
SXA3318BZ
TAJB104KLRH
MCH18
TAJB106K020R
AM03M
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zener diode c5
Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Text: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description 19.5 dB Gain at 900 MHz 29.5 dBm P1dB at 900 MHz 47 dBm Output IP3 at 900 MHz MTTF > 100 Years Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide
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ASX401
ASX401,
100pF
RCP2150A03
zener diode c5
Zener C422
zener diode c6
C2 6 zener diode
5-6V Zener Diode
Zener Diode C3 5
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mmic C4 sot 89
Abstract: No abstract text available
Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89
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AP209
3000MHz
43dBm
24dBm
OT-89
OT-89
AP209
OT-89)
mmic C4 sot 89
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
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MMG15241H
MMG15241HT1
MMG15241H
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Untitled
Abstract: No abstract text available
Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89
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AP209
3000MHz
43dBm
24dBm
OT-89
OT-89
AP209
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Untitled
Abstract: No abstract text available
Text: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of
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AWG3020
AWG3020
AWG3020,
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Untitled
Abstract: No abstract text available
Text: AWG3023 AWG3023 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3023, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of
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AWG3023
AWG3023
AWG3023,
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H Rev. 0, 12/2010 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
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MMG20271H
MMG20271HT1
MMG20271H
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ASL39D2
Abstract: No abstract text available
Text: ASL39D2 ASL39D2 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview Features • 5 ~ 1200 MHz Bandwidth 18.5 dB High Gain at 1 GHz High Output Power: 105 dBV Robust under Hard Operating Conditions +5 V, 300 mA Supply Applications
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ASL39D2
ASL39D2
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