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    C4 MMIC Search Results

    C4 MMIC Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    C4 MMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rogers 4350

    Abstract: HMC245QS16 HMC252QS24 sp8t rf switch PATH240
    Text: v01.0404 HMC245QS16 GaAs MMIC SP3T NON-REFLECTIVE SWITCH, DC - 3.5 GHz Evaluation PCB List of Material Item Description J1 - J4 PC Mount SMA RF Connector J5 - J8 DC Pin C1 - C4 100 pF Capacitor, 0402 Pkg. C5 10k pF Capacitor, 0603 Pkg. U1 HMC245QS16 SP3T Switch


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    PDF HMC245QS16 HMC245QS16 Rogers 4350 HMC252QS24 sp8t rf switch PATH240

    MLA-01122B-C4

    Abstract: C4 MMIC schematic diagram receiver data circuit satellite
    Text: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications


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    PDF MLA-01122B-C4 50-Ohm MLA-01122B-C4 C4 MMIC schematic diagram receiver data circuit satellite

    MLA-01122B-C4

    Abstract: mmic instrumentation amplifier PCB layout
    Text: MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier Data Sheet Rev A June 2010 FEATURES • • • • • • • • • • APPLICATIONS 1.0 to 12 GHz • Microwave Point-to-Point Radios 1.3 dB @ 2.0 GHz • Satellite and Telemetry Communications


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    PDF MLA-01122B-C4 50-Ohm MLA-01122B-C4 mmic instrumentation amplifier PCB layout

    Capacitor 0.01 uF

    Abstract: No abstract text available
    Text: MAALSS0024 Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • V 1.00 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 Description L2 GND VDD C4


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    PDF MAALSS0024 OT-26 MAALSS0024 OT-26 Capacitor 0.01 uF

    capacitor 0.01 uF

    Abstract: M513 MAALSS0024 MAALSS0024SMB-01 MAALSS0024SMB-02 MAALSS0024TR L2 sot26
    Text: Broadband Low Noise Amplifier 1.7 - 2.1 GHz Features • • • • • MAALSS0024 V2 Application Schematic High Gain: 20 dB Low Noise Figure: 1.0 dB High IP3: 26 dBm Single +3 V or +5 V Bias Small Package: SOT-26 VDD1 VDD2 C3 L2 Description GND VDD C4 RFOUT


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    PDF MAALSS0024 OT-26 MAALSS0024 capacitor 0.01 uF M513 MAALSS0024SMB-01 MAALSS0024SMB-02 MAALSS0024TR L2 sot26

    stripline filter

    Abstract: BGA2012 TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz
    Text: H High IP3 MMIC LNA at 1.8-2.4 GHz Application note for the BGA2012 The BGA2012 is a MMIC 50 Ω LNA block for cellular applications at 1.8 GHz to 2.4 GHz that require low noise, high gain and good linearity. Possible applications: • 1.8 GHz - DECT - gain 15 dB, low noise 1.7 dB, supply curent 4 mA


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    PDF BGA2012 BGA2012 OT363. -------20mm-------> TDK0603 stripline filter TDK0603 TRANSISTOR SMD nf c4 High IP3 MMIC LNA at 1.8-2.4 GHz

    MIXER SCHEMATIC DIAGRAM

    Abstract: c4 ic rf amplifier
    Text: HPMX-2006 Demonstration Circuit Board rev AP060596A Applications Bulletin Introduction The circuit board described is designed for use with HPMX-2006 up converter / amplifier MMIC. The board can be set up to test the mixer alone or to test the mixer/amp combination. It allows testing the


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    PDF HPMX-2006 AP060596A MR102993A MIXER SCHEMATIC DIAGRAM c4 ic rf amplifier

    MP0402

    Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)


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    PDF MP0001 MP0002 MP0003 MP0004 MP0005 MP0010 MP0015 MP0022 MP0033 MP0047 MP0402 MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004

    MG271H

    Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
    Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low


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    PDF MMG20271H9 OT--89 MMG20271H9T1 MMG20271H9 MG271H marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01

    Zener C212

    Abstract: diode zener c71 zener ma 1150
    Text: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide


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    PDF ASX621 ASX621, Zener C212 diode zener c71 zener ma 1150

    Untitled

    Abstract: No abstract text available
    Text:  AWT918 TX POWER MMIC Advanced Product Information Rev 0 CELLULAR/PCS Dual Band GaAs Power Amplifier IC DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800, GSM900/GSM1900 and


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    PDF AWT918 GSM900/DCS1800, GSM900/GSM1900 AMPS/GSM1900. PCS/GSM1900

    AH03L

    Abstract: TAJB104KLRH m 213 exposed pad 5v mmic A MCH18 SXA-3318B TAJB106K020R 99c4
    Text: Preliminary Product Description SXA-3318B Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


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    PDF SXA-3318B SXA-3318B MPO-101644 3318B EDS-103164 AH03L TAJB104KLRH m 213 exposed pad 5v mmic A MCH18 TAJB106K020R 99c4

    tk 1838

    Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
    Text: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V


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    PDF UPC8179TK UPC8179TK-E3 tk 1838 h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low


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    PDF MMG20271H9 MMG20271H9T1 MMG20271H9 OT--89

    Untitled

    Abstract: No abstract text available
    Text: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of


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    PDF AWG3020 AWG3020 AWG3020,

    SXA3318BZ

    Abstract: TAJB104KLRH MCH18 SXA-3318B TAJB106K020R AM03M
    Text: SXA-3318B SXA-3318BZ Product Description RoHS Compliant & Green Package Pb 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost


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    PDF SXA-3318B SXA-3318BZ SXA-3318B digS-103164 -3318B -3318B SXA3318B" SXA3318BZ" MPO-101644 EDS-103164 SXA3318BZ TAJB104KLRH MCH18 TAJB106K020R AM03M

    zener diode c5

    Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
    Text: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide


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    PDF ASX401 ASX401, 100pF RCP2150A03 zener diode c5 Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5

    mmic C4 sot 89

    Abstract: No abstract text available
    Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209 OT-89) mmic C4 sot 89

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,


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    PDF MMG15241H MMG15241HT1 MMG15241H

    Untitled

    Abstract: No abstract text available
    Text: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89


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    PDF AP209 3000MHz 43dBm 24dBm OT-89 OT-89 AP209

    Untitled

    Abstract: No abstract text available
    Text: AWG3020 AWG3020 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3020, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of


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    PDF AWG3020 AWG3020 AWG3020,

    Untitled

    Abstract: No abstract text available
    Text: AWG3023 AWG3023 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3023, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 50 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of


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    PDF AWG3023 AWG3023 AWG3023,

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMG20271H Rev. 0, 12/2010 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271HT1 High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,


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    PDF MMG20271H MMG20271HT1 MMG20271H

    ASL39D2

    Abstract: No abstract text available
    Text: ASL39D2 ASL39D2 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview Features • 5 ~ 1200 MHz Bandwidth  18.5 dB High Gain at 1 GHz  High Output Power: 105 dBV  Robust under Hard Operating Conditions  +5 V, 300 mA Supply Applications


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    PDF ASL39D2 ASL39D2