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    UPC8128TB Price and Stock

    Rochester Electronics LLC UPC8128TB-E3-A

    IC AMP PCS 100MHZ-1.9GHZ 6SUPER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPC8128TB-E3-A Bulk 93,000 417
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    California Eastern Laboratories (CEL) UPC8128TB-EV09

    EVAL BOARD FOR UPC8128 900MHZ
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    DigiKey UPC8128TB-EV09 Box
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    Mouser Electronics UPC8128TB-EV09
    • 1 $110
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    California Eastern Laboratories (CEL) UPC8128TB-EV19

    RF Development Tools Silicon MMIC Amp Evaluation
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    Mouser Electronics UPC8128TB-EV19
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    NEC Electronics Group UPC8128TB-E3

    Microwave Amplifier, Single, 6 Pin, Plastic, TSSOP
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    Quest Components UPC8128TB-E3 178
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    Renesas Electronics Corporation UPC8128TB-E3-A

    Wide Band Low Power Amplifier, 100MHz Min, 1900MH '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics UPC8128TB-E3-A 93,000 1
    • 1 $0.6933
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    Find more UPC8128TB price and stock on Findchips.com

    UPC8128TB Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC8128TB NEC SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES Original PDF
    uPC8128TB NEC RF Amplifier, Buffer amplifier, Single channel, Chip, 3100 MHz, SOT-363, 6-Pin Original PDF
    UPC8128TB-E3 NEC Silicon RFIC low current amplifier for cellular/cordless telephones. Original PDF
    uPC8128TB-E3 NEC RF Amplifier, Buffer amplifier, Single channel, Chip, 3100 MHz, SOT-363, 6-Pin Original PDF
    UPC8128TB-EV09 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8128 900MHZ Original PDF
    UPC8128TB-EV19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8128 1.9GHZ Original PDF

    UPC8128TB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    upc 1478

    Abstract: uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8128TB CELLULAR/CORDLESS TELEPHONES FEATURES GAIN vs. FREQUENCYand VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 Gain, GP dB • LOW CURRENT CONSUMPTION: Icc = 2.8 mA, TYP at 3.0 V • HIGH EFFICIENCY: P1dB = -4 dBm, TYP at f = 1 GHz


    Original     		PDF UPC8128TB OT-363 UPC8128TB UPC8128TB-E3 900MHZ 24-Hour upc 1478 uPC 1163 nec marking power amplifier upc rfics marking 5 900MHZ UPC8128TB-E3 UPC8151TB UPC8152TB 8128TB

    MARKING c2p

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:


    Original     		PDF UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB; MARKING c2p

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    top marking c3

    Abstract: No abstract text available
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C


    Original     		PDF UPC8178TB POWE15 UPC8178TB-E3 24-Hour top marking c3

    UPC8128TB

    Abstract: UPC8151TB UPC8151TB-E3-A UPC8152TB
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz


    Original     		PDF UPC8151TB UPC8151TB; OT-363 UPC8128TB UPC8151TB UPC8151TB-E3-A UPC8152TB

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    8151TB

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PC8128TB, PC8151TB, PC8152TB P13914JJ1V0ANJ11 FAX044435-9608 8151TB

    tk 1838

    Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
    Text: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V


    Original     		PDF UPC8179TK UPC8179TK-E3 tk 1838 h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB

    az 10840

    Abstract: tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A
    Text: NEC's SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE TK • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) 1.3 ± 0.05 • SUPPLY VOLTAGE:


    Original     		PDF UPC8179TK az 10840 tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    gp 752

    Abstract: marking C2U
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V


    Original     		PDF UPC8151TB; UPC8151TB OT-363 UPC8151TB-E3-A 24-Hour gp 752 marking C2U

    UPC8128TB

    Abstract: UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C


    Original     		PDF UPC8178TB UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB

    nec marking power amplifier upc

    Abstract: 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8152TB CELLULAR/CORDLESS TELEPHONES FEATURES 1.0 GHz Output Port Matching • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V GAIN vs. FREQUENCY and VOLTAGE • LOW CURRENT CONSUMPTION: Icc = 5.6 mA TYP at 3.0 V +30 VCC = 3.3 V


    Original     		PDF UPC8152TB OT-363 UPC8152TB-E3 900MHZ 24-Hour nec marking power amplifier upc 900MHZ UPC8128TB UPC8151TB UPC8152TB UPC8152TB-E3 18 sot-363 rf power amplifier

    UPC8128TB

    Abstract: UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V Tuned at 1 GHz


    Original     		PDF UPC8151TB UPC8151TB; OT-363 UPC8151TB-E3 24-Hour UPC8128TB UPC8151TB UPC8151TB-E3 UPC8152TB SOT-363* marking 1001 gp 823

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    MARKING c2p

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES DESCRIPTION • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT CONSUMPTION: UPC8128TB; Icc = 2.8 mA t y p . @ 3.0 V UPC8151TB; Icc = 4.5 mA t y p . @ 3.0 V


    OCR Scan     		PDF UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB; MARKING c2p

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V • LOW CURRENT UPC8128TB; Icc UPC8151TB; Icc UPC8152TB; Icc • • UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz


    OCR Scan     		PDF UPC8128TB UPC8151TB UPC8152TB UPC8128TB; UPC8151TB; UPC8152TB;

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for


    OCR Scan     		PDF PC8128TB, IPC8151TB, PC8152TB 8151TB 8152TB nitridP15-00-3 WS60-00-1 C10535E)

    CD 2399 GP

    Abstract: ic cd 2399 gp ic cd 2399 go
    Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS liPC8128TB, /¿PC8151TB, pPC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for


    OCR Scan     		PDF liPC8128TB, PC8151TB, pPC8152TB PC8128TB, 8151TB 8152TB T-00-3 WS60-00-1 C10535E) CD 2399 GP ic cd 2399 gp ic cd 2399 go

    uc8151

    Abstract: TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478
    Text: _ DATA SHEET_ / BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC8128TB, ¿¿PC8151TB, ¿¿PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The /xPC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for


    OCR Scan     		PDF uPC8128TB uPC8151TB uPC8152TB /xPC8128TB, 8151TB 8152TB uc8151 TPC815 UPC 1035 8151T upc 814 l nec uPC 1163 A upc 1478

    t06 sot 23

    Abstract: UPC2710 upc2713
    Text: RF 1C Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL CHARACTERISTICS’ f t * • 25“C Typical Fraquancy Hangs Vcc 93H B V) Pan Numbar MIN 9m NF (dB) Icc <mA) TYP MAX Gain RLin RLout PldB ISOL (dB) (dB) (dB) (dBm) (dB) TYP TYP TYP TYP TYP MIN TYP MAX Pfeg.


    OCR Scan     		PDF UPC1678GV6 UPC2708T2 UPC2709TB2 UPC2710T6 UPC2711TB2 UPC2712TB2 UPC2713T6 UPC2745TB6 UPC2746TB6 UPC2747T3 t06 sot 23 UPC2710 upc2713