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    TDK Corporation C4532X7R1H685K250KB

    CAP CER 6.8UF 50V X7R 1812
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    TDK Corporation C4532X7R1H685K(250KB)

    Multilayer Ceramic Capacitor, 6.8 uF, 50 V, ? 10%, X7R, 1812 [4532 Metric] - Tape and Reel (Alt: 79Y4465)
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    TDK Corporation C4532X7R1H685K

    Cap Ceramic 6.8uF 50V X7R 10% Pad SMD 1812 125°C T/R
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    TDK Corporation C4532X7R1H685M250KB

    Multilayer Ceramic Capacitors MLCC - SMD/SMT RECOMMENDED ALT 810-C4532X7R1H685K
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    C4532X7R1H685K Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C4532X7R1H685K250KB TDK Ceramic Capacitors, Capacitors, CAP CER 6.8UF 50V 10% X7R 1812 Original PDF

    C4532X7R1H685K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1005JB

    Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005JB C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805]

    3845 48V to 12V buck boost converter

    Abstract: ltc 3845 3845 ic 3845 n equivalent VALUE IC PIN CONFIGURATION OF IC 3845 3845 an ic 3845 ic PIN DIAGRAM regulator 48V to 12v ic 3845 REG IC 48V IN 12V 10A OUT ic
    Text: LT3845 High Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Voltage Operation: Up to 60V Synchronizable Up to 600kHz Adjustable Constant Frequency: 100kHz to 500kHz


    Original     		PDF LT3845 600kHz 100kHz 500kHz 16-Lead 200kHz LT3800 LT3844 3845 48V to 12V buck boost converter ltc 3845 3845 ic 3845 n equivalent VALUE IC PIN CONFIGURATION OF IC 3845 3845 an ic 3845 ic PIN DIAGRAM regulator 48V to 12v ic 3845 REG IC 48V IN 12V 10A OUT ic

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X

    nippon capacitors

    Abstract: CMSH5-60 EEEFK1J220XP LM22680MR-ADJ
    Text: National Semiconductor Application Note 1911 Ricardo Capetillo July 6, 2010 Introduction The performance of the evaluation board is as follows: Input Range: 4.5V to 42V Output Voltage: 3.3V Output Current Range: 0A to 2A Frequency of Operation: 500 kHz Board Size: 1.5 X 1.5 inches


    Original     		PDF LM22680 AN-1911 nippon capacitors CMSH5-60 EEEFK1J220XP LM22680MR-ADJ

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		PDF MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6

    50CE220AX

    Abstract: RJK0652 RJK0652 renesas LTC3788-1 LTC3788E-1 LTC3788 LTC3788EGN-1 LTC3788GN-1 LTC3788I-1 LTC3788IGN-1
    Text: LTC3788-1 2-Phase, Dual Output Synchronous Boost Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n The LTC 3788-1 is a high performance 2-phase dual synchronous boost converter controller that drives all N-channel power MOSFETs. Synchronous rectification


    Original     		PDF LTC3788-1 LTC3788-1 Lo/LTC1871-1/ LTC1871-7 MSOP-10 LT3757/LT3758 0V/100V, 100kHz DFN-10 MSOP-10E 50CE220AX RJK0652 RJK0652 renesas LTC3788E-1 LTC3788 LTC3788EGN-1 LTC3788GN-1 LTC3788I-1 LTC3788IGN-1

    Untitled

    Abstract: No abstract text available
    Text: LT3844 High Voltage, Current Mode Switching Regulator Controller with Programmable Operating Frequency FEATURES n n n n n n n n n n n n n n DESCRIPTION The LT 3844 is a DC/DC controller used for medium power, low part count, high efficiency supplies. It offers a wide


    Original     		PDF LT3844 100kHz 500kHz 600kHz 3703/LTC3703-5 LT3724 16-Lead 200kHz LT3800

    RJK0652

    Abstract: No abstract text available
    Text: LTC3788 2-Phase, Dual Output Synchronous Boost Controller Description Features Synchronous Operation for Highest Efficiency and Reduced Heat Dissipation n Wide Input Range: 4.5V to 38V 40V Abs Max and Operates Down to 2.5V After Start-Up n Output Voltages Up to 60V


    Original     		PDF LTC3788 850kHz. SSOP-28, QFN-28, SSOP-28 3788fc LTC3787/LTC3787-1 LTC3786 RJK0652

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		PDF MW7IC2220N MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

    MRF8P20140WH/HS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C

    Untitled

    Abstract: No abstract text available
    Text: LTC3788 2-Phase, Dual Output Synchronous Boost Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n Synchronous Operation for Highest Efficiency and Reduced Heat Dissipation Wide Input Range: 4.5V to 38V 40V Abs Max and Operates Down to 2.5V After Start-Up


    Original     		PDF LTC3788 75kHz 850kHz) 50kHz 900kHz) 500kHz SSOP-24, TSSOP-24, QFN-24

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		PDF AFT20P140--4WN AFT20P140-4WNR3

    AN19-11

    Abstract: nippon capacitors CMSH5-60 EEEFK1J220XP LM22680MR-ADJ
    Text: National Semiconductor Application Note 1911 Ricardo Capetillo December 12, 2008 Introduction The performance of the evaluation board is as follows: Input Range: 4.5V to 42V Output Voltage: 3.3V Output Current Range: 0A to 2A Frequency of Operation: 500 kHz


    Original     		PDF LM22680 AN-1911 AN19-11 nippon capacitors CMSH5-60 EEEFK1J220XP LM22680MR-ADJ

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

    DB3-5D

    Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR

    C1608C0G1H5R6C

    Abstract: C1608X7R1H104KT0Y9 C2012X5R1C226K C2012X7R1A475K
    Text: C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608C0G1H5R6C C1608X7R1H104KT0Y9 C2012X5R1C226K C2012X7R1A475K

    C1005X5R1V154K050BC

    Abstract: C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005X5R1V154K050BC C3216X7R1H335K160AC C3216X7R1H475K C3225X7R1H106 C4532X7R1E106M250KA C0402CH1C390K020BC C1608X7S1A475K C1608X5R1A226M C4532X7R1H685M250 C1608C0G1H102K

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with


    Original     		PDF MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6

    Untitled

    Abstract: No abstract text available
    Text: LTC3787 PolyPhase Synchronous Boost Controller FEATURES n n n n n n n n n n n n n n DESCRIPTION 2-Phase Operation Reduces Required Input and Output Capacitance and Power Supply Induced Noise Synchronous Operation for Highest Efficiency and Reduced Heat Dissipation


    Original     		PDF LTC3787 75kHz 850kHz) 50kHz 900kHz) MSOP-10 LTC3859 LTC3789 QFN-28

    RJK0652

    Abstract: No abstract text available
    Text: LTC3788-1 2-Phase, Dual Output Synchronous Boost Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n The LTC 3788-1 is a high performance 2-phase dual synchronous boost converter controller that drives all N-channel power MOSFETs. Synchronous rectification


    Original     		PDF LTC3788-1 850kHz. ra900kHz QFN-28, SSOP-28 50kHz 900kHz QFN-32, RJK0652