54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
|
Original
|
RC410MD
SB450
BA41-00615A
RC410MD
Sheet18.
Sheet19.
Sheet20
TP682
TP685
TP686
54B2
HH-1M1608-600JT
20B3 diode
tp807
TP889
hh-1m1608
RC410M
IR 30D1 7E
TP828
t9504
|
PDF
|
C460A
Abstract: C424A C410A C428A C411A C414A C49A
Text: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series devices are a low profile alternative to standard
|
Original
|
C4SMAFL170A
C433A
C436A
C440A
C443A
C445A
C448A
C451A
C454A
C458A
C460A
C424A
C410A
C428A
C411A
C414A
C49A
|
PDF
|
C416A
Abstract: C451A C443A C436A
Text: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series devices are a low profile alternative to standard
|
Original
|
C4SMAFL170A
C433A
C436A
C440A
C443A
C445A
C448A
C451A
C454A
C458A
C416A
C451A
C443A
C436A
|
PDF
|
C410A
Abstract: C443A C424A C412A C422A C448A C436A C428A c426a c451a
Text: C4SMAFL8.5A THRU C4SMAFL170A SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 400 WATTS, 8.5 THRU 170 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C4SMAFL8.5A series is a glass passivated junction TVS packaged
|
Original
|
C4SMAFL170A
C433A
C436A
C440A
C443A
C445A
C448A
C451A
C454A
C458A
C410A
C424A
C412A
C422A
C428A
c426a
|
PDF
|
A725F
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 w ords by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : /¿PD4516421A are assembled.
|
OCR Scan
|
MC-454AA725
72-BIT
MC-454AA725
uPD4516421A
C-454AA725-A80
C-454AA725-A10
A725F
|
PDF
|
A10B1
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
|
OCR Scan
|
MC-454AC725
72-BIT
MC-454AC725
uPD4516821A
C-454AC725-A80
-454AC
725-A10
A10B1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y D A T A S H E E T _ NEC MOS INTEGRATED CIRCUIT MC-454AD644 4 M-W ORD BY 64-BIT SYN C H R O N O U S DYNAMIC RAM MODULE U NBUFFERED TYPE Description The M C -454A D644 is a 4,194,304 words by 64 bits synchronous dynamic R A M module on which 16 pieces of 16 M
|
OCR Scan
|
MC-454AD644
64-BIT
MC-454AD644
uPD4516821
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
|
OCR Scan
|
MC-454AD645
64-BIT
MC-454AD645
uPD4516821
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
|
OCR Scan
|
MC-454AC725
72-BIT
MC-454AC725
uPD4516821
M168S-50A68
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
|
OCR Scan
|
MC-454AA725
72-BIT
MC-454AA725
uPD4516421
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AD646 4 M-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE UNBUFFERED TYPE Description The MC-454AD646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 16M ★ SDRAM : /¿PD4516821A Revision P are assembled.
|
OCR Scan
|
MC-454AD646
64-BIT
MC-454AD646
uPD4516821A
C-454AD646-A80
C-454AD646-A10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-454AD645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AD645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
|
OCR Scan
|
MC-454AD645
64-BIT
MC-454AD645
uPD4516821
M13348X)
C-454AD645F,
MC-454AD645FA]
M168S-50A65-1
|
PDF
|
