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    C5 MARKING TRANSISTOR PACKAGE Search Results

    C5 MARKING TRANSISTOR PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    C5 MARKING TRANSISTOR PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QW-R206-081

    Abstract: marking C5 2SA1774 2SC4617 2SC4617L-AE3-R 2SC4617-AE3-R hFE is transistor
    Text: UNISONIC TECHNOLOGIES CO., 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES 2 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 3 MARKING C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME


    Original     		PDF 2SC4617 2SA1774 OT-23 2SC4617L 2SC4617-AE3-R 2SC4617L-AE3-R QW-R206-081 marking C5 2SA1774 2SC4617 2SC4617L-AE3-R hFE is transistor

    NEC Ga FET marking L

    Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
    Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .


    Original     		PDF 2SJ209 2SJ209, NEC Ga FET marking L Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET

    ATC700a

    Abstract: J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		PDF BLF2022-90; OT502A AN01001 ATC700a J141 mosfet atc700a capacitor ATC100A W625 78L08 AN01001 BLF2022-90 marking L5 D marking amplifier

    marking C8 amplifier

    Abstract: ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08
    Text: Application Note BLF2022-90; Linear LDMOS amplifier for 3GPP applications in the 2110-2170 MHz frequency band By Barney Arntz and Korné Vennema CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. The device is available in both a standard as well as an earless SOT502A package.


    Original     		PDF BLF2022-90; OT502A AN01001 marking C8 amplifier ATC700A atc100a w262 atc700a capacitor 78L08 AN01001 BLF2022-90 CAPACITOR MARKING transistor 78l08

    transistor 5d

    Abstract: TC-2177 IC S350 marking s350
    Text: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci


    Original     		PDF TC-2177 1988M transistor 5d TC-2177 IC S350 marking s350

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
    Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193L3 Infineon Technologies transistor 4 ghz BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
    Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR340L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR340L3 BFR34* transistor marking FA

    C5 MARKING TRANSISTOR

    Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
    Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)


    Original     		PDF BFR380L3 C5 MARKING TRANSISTOR infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2

    ocr b

    Abstract: C5 MARKING TRANSISTOR FF 50 R 12 KF2
    Text: DATAEvaluation SHEET AdLib OCR IVEC SILICON TRANSISTOR ELECTRON DEVICE I GN1A3Q - MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR i FEATURES PACKAGE DIMENSIONS in millimeters 9 Resistors Built-in TYPE 2.1+0 .1 1.25±0.1 04 . - a 'c~ Ln C5 -H Oi


    Original     		PDF TC-2172 1988M ocr b C5 MARKING TRANSISTOR FF 50 R 12 KF2

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360L3 BFR360L3 BFR193L3

    Untitled

    Abstract: No abstract text available
    Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR183F

    Untitled

    Abstract: No abstract text available
    Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB


    Original     		PDF STAC9200 2002/95/EC STAC244B STAC9200 DocID025416

    RCs INFINEON

    Abstract: No abstract text available
    Text: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR193F RCs INFINEON

    BFR183F

    Abstract: Transistor Marking C3
    Text: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR183F BFR183F Transistor Marking C3

    transistor a4z

    Abstract: No abstract text available
    Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z


    Original     		PDF TC-2175 1988M transistor a4z

    SC74A

    Abstract: FMY5 equivalent transistor DTC144EK DTA114E DTC114E fmq2 FMC1A
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN/PNP TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		PDF SC-74A DTC115T 2SA1036K SC-88A, SC-88A SC74A FMY5 equivalent transistor DTC144EK DTA114E DTC114E fmq2 FMC1A

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BFR360F TRANSISTOR MARKING NK
    Text: BFR360F NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BFR360F RF NPN POWER TRANSISTOR C 10-12 GHZ BFR360F TRANSISTOR MARKING NK

    2N3904 smd

    Abstract: MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5
    Text: DAEV6240.004 23 March, 2012 MAS6240 EVALUATION BOARD INTRODUCTION The MAS6240 piezo driver IC evaluation board supports the MAS6240C2 piezo driver IC in the QFN package. This device version has the input current limitation disabled. The MAS6240C1 version, having


    Original     		PDF DAEV6240 MAS6240 MAS6240C2 MAS6240C1 2N3904 smd MARKING SMD transistor R11 transistor smd marking code c3 2N3904 TRANSISTOR SMD TRANSISTOR SMD MARKING CODE R8 TRANSISTOR SMD MARKING CODE 1K SMD MARKING CODE TRANSISTOR R5

    GE-3 PNP transistor

    Abstract: Ge 652 TRANSISTOR marking k2 dual nt transistor
    Text: UMC5N FMC5A and NPN’ with 2 resistors Features Dimensions Units: mm Transistor, digital, dual, PNP available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMC5N (UMT5) package marking: UMC5N and FMC5A; C5 package contains an NPN (DTC144EKA) and a PNP (DTA143XKA) digital transistor, each


    OCR Scan     		PDF SC-74A) DTC144EKA) DTA143XKA) SC-70) SC-59) GE-3 PNP transistor Ge 652 TRANSISTOR marking k2 dual nt transistor

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P

    MLC850

    Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
    Text: Product specification Philips Semiconductors NPN 2 G H z R F pow er transisto r BFG11 ; BFG 11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency


    OCR Scan     		PDF BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR

    rf transistor mar 8

    Abstract: npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips
    Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor BLT11 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT1Q3 plastic package. • High efficiency • Small size discrete power amplifier


    OCR Scan     		PDF BLT11 OT103. 711DflEL rf transistor mar 8 npn C 1740 Micro Choke 2222-032 SOT103 "RF Power Transistor" Transistor 1740 BD228 BLT11 2322 157 philips

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR