Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of HXQFN16 package SOT1039-2 4.250 3.300 pa + oa 2.000 1.500 0.500 0.500 0.240 0.500 4.250 3.300 2.000 pa + oa 0.0125 0.240 0.0125 0.350 1.500 0.800 1.800 2.300 4.000 0.500 0.800 0.350 1.500
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HXQFN16
OT1039-2
sot1039-2
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Untitled
Abstract: No abstract text available
Text: Package outline BGA736: plastic ball grid array package; 736 balls SOT1034-1 B D D1 A ball A1 index area E1 E A2 A A1 detail X e1 e AP AM AK AH AF AD AB Y V T P M K H F D B C ∅v ∅w b 1/2 e AN AL AJ AG AE AC AA W U R N L J G E C A M M C A B C y y1 C e e2
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BGA736:
OT1034-1
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Untitled
Abstract: No abstract text available
Text: Package outline HXQFN16U: plastic thermal enhanced extremely thin quad flat package; no leads; 16 terminals; UTLP based; body 3 x 3 x 0.5 mm A B D SOT1039-1 terminal 1 index area E A A1 detail X e1 e 1/2 e v w b L1 5 8 M M C C A B C y1 C y L 9 4 e e2 Eh 1/2 e
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HXQFN16U:
OT1039-1
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA736: plastic thermal enhanced ball grid array package; 736 balls; heatsink SOT1035-1 B D D1 A ball A1 index area E1 j E A2 A A1 detail X e1 e C ∅v ∅w b 1/2 e AP AN AM AL AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E
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HBGA736:
OT1035-1
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Untitled
Abstract: No abstract text available
Text: Package outline HWQFN56R: plastic thermal enhanced very very thin quad flat package; no leads; 56 terminals; resin based; body 11 x 5 x 0.7 mm B D SOT1033-1 A terminal 1 index area E A detail X e1 e 1/2 e L1 C v w b L 21 28 C A B C M M y1 C y 29 20 e Eh e2
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HWQFN56R:
OT1033-1
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Untitled
Abstract: No abstract text available
Text: Package outline HWQFN48R: plastic thermal enhanced very very thin quad flat package; no leads 48 terminals; resin based; body 7 x 7 x 0.7 mm A B D SOT1031-1 terminal 1 index area E A detail X e1 e L1 1/2 e v w b 13 24 L C C A B C M M y1 C y 25 12 e Eh e2 1/2 e
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HWQFN48R:
OT1031-1
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Untitled
Abstract: No abstract text available
Text: SOT1039-1 Standard product orientation 12NC ending 115 Rev. 02 — 27 July 2011 Packing information 1. Packing method Fig. 1 Package version 12NC ending Reel dimensions d x w mm SPQ/PQ (pcs) Reels per box Outer box dimensions l x w x h (mm) SOT1039-1 115
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OT1039-1
OT1039-1
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Untitled
Abstract: No abstract text available
Text: Package outline HVQFN32: plastic thermal enhanced very thin quad flat package; no leads; 32 terminals; body 5 x 5 x 0.85 mm A B D SOT1030-1 terminal 1 index area E A A1 c detail X e1 1/2 e v w b e L 9 16 C C A B C M M y1 C y 17 8 e e2 Eh 1/2 e 1 24 terminal 1
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HVQFN32:
OT1030-1
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Untitled
Abstract: No abstract text available
Text: Package outline HXQFN16: plastic thermal enhanced extremely thin quad flat package; no leads; 16 terminals; body 3 x 3 x 0.5 mm A B D SOT1039-2 terminal 1 index area E A A1 c detail X e1 1/2 e e 5 8 C C A B C v w b y y1 C L 4 9 e e2 Eh 1/2 e 1 12 terminal 1
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HXQFN16:
OT1039-2
sot1039-2
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Untitled
Abstract: No abstract text available
Text: Package outline HUQFN76U: plastic thermal enhanced ultra thin quad flat package; no leads; 76 terminals; UTLP based; body 6 x 6 x 0.55 mm B D SOT1036-1 A terminal 1 index area E A A1 detail X e2 v w M M C A B C e1 e D2 D6 eR L L1 A11 v w b C A B C M M C B8
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HUQFN76U:
OT1036-1
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Untitled
Abstract: No abstract text available
Text: Package outline HWQFN48R: plastic thermal enhanced very very thin quad flat package; no leads 48 terminals; resin based; body 7 x 7 x 0.7 mm A B D SOT1031-2 terminal 1 index area E A detail X e1 e L1 1/2 e v w b 13 24 L M M C C A B C y1 C y 25 12 e Eh e2 1/2 e
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HWQFN48R:
OT1031-2
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2322-712
Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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OT103
33-OS
BFG134
Q04S2014
OT103.
2322-712
BFG134
LC 3524
philips resistor 2322 763
2222 372
TAG 453 665 800
2222 379
2322 712
fr 253/30 r
h a 431 transistor
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BFG34
Abstract: ON4497 TRANSISTOR 185 846 TRANSISTOR 726
Text: Philips Semiconductors Product specification -P .3 NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 3 - 0 S S ShE BFG34 TllDflEfci DDMSGSb T15 • PHIN PINNING NPN transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for wideband
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BFG34
OT103
ON4497)
OT103.
BFG34
ON4497
TRANSISTOR 185 846
TRANSISTOR 726
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BFG32
Abstract: No abstract text available
Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
BFG32
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BFG195
Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
Text: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197
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BFG195
OT103)
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
X3A-BFQ195
URV-3-5-52/733
BFG195
SOT103
BFQ195
BFG197
BFG198
320nm
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transistor 1264-1
Abstract: PHm 0440 transistor npn d 2058 BFG90A BFG90 phm 0048 phm 0031 ami 981 FP 801 UCD074
Text: Philips S em iconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ' SbE D • / g BFG90A 711Dfi2b □□45111 735 ■ PHIN PINNING NPN transistor in a 4-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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OT103
BFG90A
711002b
OT103.
transistor 1264-1
PHm 0440
transistor npn d 2058
BFG90A
BFG90
phm 0048
phm 0031
ami 981
FP 801
UCD074
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BFG96
Abstract: BFG32 MSB037 3H2 philips MBB352
Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
D04SD3S
MSB037
OT103.
BFG96
BFG32
3H2 philips
MBB352
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BFG65
Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332
Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .
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BFG65
OT103)
MSB037
OT103.
BFG65
transistor 3702
558 npn
MSB037
4221 transistor
D 1414 transistor
MBB332
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X3A-BFQ195
Abstract: BFG195 BFG197 BFG198
Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied
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bbS3T31
00322DÃ
X3A-BFQ195
BFG195
BFG197
OT143)
BFG198
OT223)
X3A-BFQ195
URV-3-5-52/733
BFG195
BFG197
BFG198
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BFG65
Abstract: TAG 9223 TAG 8653 702 P TRANSISTOR 4221 transistor transistor tag 306 558 npn 809 npn BFU65 transistor 3702
Text: Product specification Philips Semiconductors BFG65 NPN 8 GHz wideband transistor SbE D PHILIPS INTERNATIONAL DESCRIPTION 7110ÛSb 0045DÔ2 D04 « P H I N PINNING NPN transistor in a four-lead dual em itter plastic envelope SOT103 . It is designed fo r wideband
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BFG65
OT103)
7110fiSb
0045DÃ
OT103.
BFG65
TAG 9223
TAG 8653
702 P TRANSISTOR
4221 transistor
transistor tag 306
558 npn
809 npn
BFU65
transistor 3702
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BFG65 transistor
Abstract: No abstract text available
Text: Philips Semiconductors H 3 T 31 0 G 3 1 1 ^ 3 bbS SOT H A P X _ Product specification NPN 8 GHz wideband transistor ^ BFG65 N AI1ER PHILIPS/DISCRETE DESCRIPTION b'iE J> PINNING NPN transistor in a four-lead dual emitter plastic envelope SOT103 . It is designed for wideband
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BFG65
OT103)
BFG65 transistor
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BFG134
Abstract: BJE 247
Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for
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3131S
BFG134
OT103
OT103.
BFG134
BJE 247
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BFG134
Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for
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BFG134
BFG134
bt 1690 transistor
transistor bt 1630
resistor 2322 194 philips
bt 1690 philips
2222 372
DD313
752 J 1600 V CAPACITOR
LC 3524
2222 379
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D 1398 Transistor
Abstract: BFG32 BFG96 DD311
Text: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV
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G03114b
BFG32
OT103
BFG96.
OT103.
D 1398 Transistor
BFG32
BFG96
DD311
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