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    C846 TRANSISTOR Search Results

    C846 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C846 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c845

    Abstract: c846 transistor D-12 IRGBC30K C-844
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 c846 transistor D-12 IRGBC30K C-844

    c845

    Abstract: c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 c845 TO 92 D-12 IRGBC30K C844 c847 C-844 DC MOTOR CONTROL IGBT

    c845

    Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
    Text: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    Original     		PDF IRGBC30K O-220AB C-848 c845 C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G LBC848BPDW1T1G LBC848BPDW1T3G LBC848CPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ AEC-Q101 LBC846BPDW1T1G LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G S-LBC846BPDW1T1G S-LBC847BPDW1T1G S-LBC847CPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ AEC-Q101 LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G S-LBC847CPDW1T3G LBC848BPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G LBC848BPDW1T1G LBC848BPDW1T3G LBC848CPDW1T1G

    LBC846BPDW1

    Abstract: lbc846bpd
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SC LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1 LBC846BPDW1 lbc846bpd

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G LBC848BPDW1T1G LBC848BPDW1T3G LBC848CPDW1T1G

    LBC847BPDW1T1G

    Abstract: SOT-363 marking BF LBC846 LBC846BPDW1T1G LBC847 LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SC LBC846BPDW1T1G LBC847CPDW1T1G LBC848CPDW1T1G LBC847BPDW1T1G LBC848BPDW1T1G LBC847BPDW1T1G SOT-363 marking BF LBC846 LBC846BPDW1T1G LBC847 LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G LBC848BPDW1T1G LBC848BPDW1T3G LBC848CPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1 LBC847BPDW1T1 LBC847CPDW1T1 LBC848BPDW1T1 LBC848CPDW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ AEC-Q101 LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G LBC847CPDW1T3G S-LBC846BPDW1T1G S-LBC846BPDW1T3G

    LBC846BPDW1T1G

    Abstract: LBC846 LBC847 LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SC LBC846BPDW1T1G LBC847CPDW1T1G LBC848CPDW1T1G LBC847BPDW1T1G LBC848BPDW1T1G LBC846BPDW1T1G LBC846 LBC847 LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC847CPDW1T1G LBC848CPDW1T1G LBC847BPDW1T1G LBC848BPDW1T1G

    r305 finger print module

    Abstract: bcm4306 toshiba c850 free C828 R305 finger print scan module C828 3-pin transistor logitech c615 logitech c270 NEC C959 transistor c939
    Text: Acer Ferrari 3000 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.FR1V7.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Ferrari 3000 service guide.


    Original     		PDF

    FOXCONN fan

    Abstract: ICS9LP505-2HGLF LGA775 crb ICS9LP505-2 cxd9872 CXD9872AK CXD9872AKD HDJ26 A93549-001 APT2012QGW-F01-INT
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B A Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Rev. 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


    Original     		PDF CK505 LGA775 PCIEX16 R1105 R1106 R1101 R1102 R1103 R1104 FOXCONN fan ICS9LP505-2HGLF LGA775 crb ICS9LP505-2 cxd9872 CXD9872AK CXD9872AKD HDJ26 A93549-001 APT2012QGW-F01-INT

    nvidia chip

    Abstract: NVIDIA schematics transistor c998 alps touch PDTA144E CIRCUIT DIAGRAM foxconn g31 max1987 nvidia reference HS8108 Transistor C1173
    Text: 1 2 3 4 5 6 7 8 MS01 915PM/GM+Gfx Block Diagram 4Mx32bx2pcs DDR Video-RAM Panel Connector A LVDS WSXGA+ nVIDIA NV44M PAGE 13 CRT VGA PAGE 10,11,12,13,14 PAGE 13 14.318MHZ PAGE 2,3 SO-DIMM 0 333 MHZ DDR FSB 533 MHZ (4.3GB/S) PCIE X16 HEAD PHONE JACK LVDS CRT


    Original     		PDF 915PM/GM 4Mx32bx2pcs NV44M BGA-701 Micro-FCBGA-478 CK-410M IDT-CV125/ ICS954206BG) TSSOP-56 318MHZ nvidia chip NVIDIA schematics transistor c998 alps touch PDTA144E CIRCUIT DIAGRAM foxconn g31 max1987 nvidia reference HS8108 Transistor C1173

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


    Original     		PDF MPC7450 200PIN RPAK10P2C 1000BT SN74AUC1G04 sil1162 Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic

    C847

    Abstract: el 847 c847
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847 FEATURES PINNING • Low curren t max. 100 mA


    OCR Scan     		PDF BC846; BC847 BC857. BC847B BC847C MAM255 115002/00/03/pp8 C847 el 847 c847

    c845

    Abstract: No abstract text available
    Text: P D -9.1071 International [^Rectifier IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC30K C-847 O-22QAB C-848 4A554S2 0020b3fl c845

    c846 transistor

    Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
    Text: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz


    OCR Scan     		PDF IRGBC30K TQ-220AB C-848 c846 transistor c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn