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    MOSFET 2N-CH 1200V 168A MODULE
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    CAS100H12AM1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CAS100H12AM1 Cree FETs - Modules, Discrete Semiconductor Products, MOD SIC 1.2KV 165A HALF-BRIDGE Original PDF

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    CAS100H12

    Abstract: No abstract text available
    Text: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package


    Original
    PDF CAS100H12AM1 CAS120M12BM2 CAS100H12AM1 CAS100H12

    CPWR-AN12

    Abstract: CAS100H12AM1
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original
    PDF CAS100H12AM1 CAS100H12AM1 CPWR-AN12

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original
    PDF CAS100H12AM1 CAS100H12AM1

    CAS100H12

    Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
    Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original
    PDF CAS100H12AM1 VDS1200 CAS100H12AM1, CAS100H12 CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original
    PDF CAS100H12AM1 CAS100H12AM1

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original
    PDF CAS100H12AM1 CAS100H12AM1