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    CD3022 Price and Stock

    Microchip Technology Inc CD3022B

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    DigiKey CD3022B Reel 233
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    Avnet Americas CD3022B Bulk 233
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    Mouser Electronics CD3022B
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    Newark CD3022B Bulk 233
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    Microchip Technology Inc CD3022B
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    Onlinecomponents.com CD3022B
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    NAC CD3022B 92
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    Master Electronics CD3022B
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    Samtec Inc HLCD-30-22.00-TD-TH-1

    High Speed Hermaphroditic Cable, 0.50mm Pitch - Bulk (Alt: HLCD-30-22.00-TD-T)
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    Avnet Americas HLCD-30-22.00-TD-TH-1 Bulk 1
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    CD3022 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CD3022B Compensated Devices 1 WATT CAPABILITY WITH PROPER HEAT SINKING Original PDF

    CD3022 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAYFP1G95

    Abstract: SOW-28 DA79 PD022 PL028 16-038-PQT-2 DW74 CD022 DA79 H EM130
    Text: Physical Dimensions BSC is an ANSI standard for Basic Centering. Dimensions are measured in inches. PD022 1.090 1.120 .390 .425 12 22 .340 .390 Pin 1 I.D. .009 .015 .430 .500 11 .045 .065 0° 10° .005 MIN .140 .200 SEATING PLANE .120 .160 .090 .110 .014 .022


    Original     		PDF PD022 16-038-S PD024 16-038-SB-AG CD028 CD022 16-000038H-3 CD3022 SAYFP1G95 SOW-28 DA79 PD022 PL028 16-038-PQT-2 DW74 CD022 DA79 H EM130

    LT 83 ZENER

    Abstract: CD3030B
    Text: • 1N3016B THRU 1N3045B AVAILABLE IN CD3016B thru JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING CD3045B • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,


    Original     		PDF 1N3016B 1N3045B MIL-PRF-19500/115 CD3016B CD3045B 200mA: CD3017B CD3018B CD3019B LT 83 ZENER CD3030B

    cd3016b

    Abstract: CD3029B CD3041 1N3016B 1N3045B CD3017B CD3018B CD3019B CD3020B CD3021B
    Text: CD3016B thru • 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING CD3045B • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,


    Original     		PDF CD3016B 1N3016B 1N3045B MIL-PRF-19500/115 CD3045B 200mA: CD3016 cd3016b CD3029B CD3041 CD3017B CD3018B CD3019B CD3020B CD3021B

    UE 40 F 6470

    Abstract: pid u 13t
    Text: OY i Am99C16 4 /Am99CL164 Am99C16 5 /Am99CL165 16,384x4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS F ast a ccess tim e - 3 5 /4 5 /5 5 /7 0 ns maxim um 16K x 4 organization O utput Enable ÜE control to a lleviate bus-contention


    OCR Scan     		PDF Am99C16 /Am99CL164 /Am99CL165 384x4 99C165) 22-pin 300-inch Am99C164 UE 40 F 6470 pid u 13t

    7207 irc

    Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
    Text: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active


    OCR Scan     		PDF Am99C641 Am99CL641 22-pin AIS-WCP-10M-7/87-0 7207 irc AM99C641-25 AM99C641-35 CD3022

    pid u 13t

    Abstract: No abstract text available
    Text: AD V MICRO {MEMORY]- 0 e! 0257528 ADV MICRO A m DEj D2S7S2Ö DOESbHM MEMORY 89D 9 9 C 1 6 4 /A m 7 j~ 25634 D r T -4 6 -2 3 -1 0 9 9 C L 1 6 4 A m 9 @ C 1 6 5 /A m 9 9 C L 1 6 5 1 6 ,3 8 4 x 4 Static R /W Randoiïi-Access Memory PRELIMINARY > > 33 D ISTINCTIVE CHARACTERISTICS


    OCR Scan     		PDF Am99C165 22-pin 300-lnch Am99C164 AIS-WCP-10M-7/87-0 pid u 13t

    rsn 3404

    Abstract: cf -mh 22 e 103 m-c texas instruments data guide manual HIGH VOLTAGE ISOLATION DZ 2101 PEAK DETECTOR CIRC Transistor AND DIODE Equivalent list Scans-049 RRUS 32 b2 specs TIL Display transistor 381 7943 363AM
    Text: a Telecommunication Products Data Book 1992/1993 Advanced Micro Devices Telecommunication Products Data Book 1 9 9 2 /1 9 9 3 D V A N C E D M I C R O D E V I C E S Î 1 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products


    OCR Scan     		PDF is110 CD028 PL028 06751F PL032 CD040 rsn 3404 cf -mh 22 e 103 m-c texas instruments data guide manual HIGH VOLTAGE ISOLATION DZ 2101 PEAK DETECTOR CIRC Transistor AND DIODE Equivalent list Scans-049 RRUS 32 b2 specs TIL Display transistor 381 7943 363AM

    PD3024

    Abstract: pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266
    Text: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIMINARY DISTINCTIVE CHARACTERISTICS Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability 22-pin 0.300-inch DIP <Am99C164


    OCR Scan     		PDF Am99C164/Am99CL164 Am99C165/Am99CL165 384x4 Am99C165 22-pin 300-inch Am99C164 24-pin PD3024 pid u 13t CD3022 alc221 CERAMIC LEADLESS CHIP CARRIER AM99C164-35 alc 266

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *


    OCR Scan     		PDF Am99C164/Am99C165 Am99C164 Am99C165 Am99CL164 Am99CL165 T-46-23 Am99C16 /Am99CL164 /Am99CL165

    7207 irc

    Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
    Text: Am99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active


    OCR Scan     		PDF Am99C641 Am99CL641 22-pin AIS-WCP-10M-7/87-0 7207 irc AM99C641-25 AM99C641-35 CD3022

    pid u 13t

    Abstract: AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST
    Text: O y < s -1 Am99C16 4 / Am99CL16 4 Am99C16 5 / Am99CL16 5 1 6 ,3 8 4 x 4 Static R /W Random-Access Memory PRELIM IN ARY D IS T IN C T IV E C H A R A C T E R IS T IC S Low pow er dissipation - 550 m W operating pow er - 200 fiW d a ta retention 2-V data-retention capability


    OCR Scan     		PDF Am99C164 Am99CL164 Am99C165 Am99CL165 99C165) 22-pin 300-inch 99C164) pid u 13t AM99C164-35 AM99C164-70 CD3022 99C164 L165 ST

    CD3045

    Abstract: 5 volts ZENER DIODE 10 -50mA cd3016b CD3029B CD3017B CD3018B CD3019B CD3020B CD3021B CD3022B
    Text: CD3016B 1 WATT ZENER DIODE CHIPS thru ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD3045B 1 WATT CAPABILITY WITH PROPER HEAT SINKING MAXIMUM RATINGS O perating Tem perature: -65°C to +175DC


    OCR Scan     		PDF CD3016B CD3045B 175DC 200mA: 230P5S4 CD3016 Z30ZSS4 00D0720 CD3045 5 volts ZENER DIODE 10 -50mA cd3016b CD3029B CD3017B CD3018B CD3019B CD3020B CD3021B CD3022B

    Untitled

    Abstract: No abstract text available
    Text: Am99C641 65,536 x 1 Static Read/W rite Random-Access Memory PRELIMINARY High-performance CMOS circuit High Speed - access times as Single 5-V ±10% power-supply Low power - 715 mW active 110 mW TTL - Standby design fast as operation and •process 2 V data retention for battery back up applications


    OCR Scan     		PDF Am99C641 22-pin WF021440

    KS000010

    Abstract: No abstract text available
    Text: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ Am99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process


    OCR Scan     		PDF 2Sfa54 Am99C641 Am99CL641 536x1 22-pin OP002570 OP002580 002Sb71 CLR022* KS000010