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    CEG8208

    Abstract: AIDM-25 S127
    Text: CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES D 20V, 6.5A, RDS ON = 22mΩ @VGS = 4.5V. D RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). *1K G1 G2 *1K High power and current handing capability.


    Original     		PDF CEG8208 CEG8208 AIDM-25 S127

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139