2SB1148
Abstract: 2SB1148A 2SD1752 2SD1752A panasonic 2SB
Text: Power Transistors 2 S 1 1 4 8 , B 2 2SB1148, 2SB1148A S B 1 1 4 8 A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith ‘2S D 1752, 2S D 1752A U nit I mm • Features • Low co llecto r-eim itter saturation voltage V ceisjo
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2SB1148,
2SB1148A
2SB1148
2SB1148A
100mA
--40mA
--35mA
2SD1752
2SD1752A
panasonic 2SB
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2SB935
Abstract: 2SB935A
Text: Power T ransistors 2SB935, 2SB935A 2SB935, 2SB935A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching • Features • Low collector-emitter saturation voltage V ceissh • High speed switching ' • “N Type” package configuration with a cooling fin for direct soldèring
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2SB935,
2SB935A
2SB935
2SB930/A)
2SB935A
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ZTX504
Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220
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BC556A
BC556B
ZTX504
BCY77A
BCY77B
BCY77C
BC212
BC307
BC557A
ZTX502
BC557B
BC557C
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2151 2SD2151 Silicon NPN Epitaxial Planar Type Package D im ensions Power Sw itching • Features • L o w c o l l e c t o r - e m i t t e r s a tu r a tio n v o lta g e V ceissu • G o o d lin e a r it y o f D C c u r r e n t g a in (h Ft)
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2SD2151
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2n6700
Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA
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2N6700
2N6714
2N6726
2N6715
2N6727
2N6724
2N6725
2N6716
2N6728
2N6717
2N6718
2N6729
2N6724
2N6725
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ZTX109
Abstract: DSA2IH00224555.
Text: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type ^CEO V BCY65EP 60 2N5209 50 Max 'c mA hFE M a x V CEIsat>
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BCY65EP
2N5209
2N5210
ZTX331
BC550P
ZTX382
BCY59P
BC414P
2N3904
2N3903
ZTX109
DSA2IH00224555.
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FZT690B
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B ISSUE 3 - OCTOBER 1995 - FE A T U R E S * * * Very low equivalent on-resistance; B CEisat 1 2 5 m il a t 2A Gain of 400 at lc =1 Amp Very low saturation voltage A PPLICA TIO N S
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FZT690B
300fis.
FZT690B
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ZTX558
Abstract: PSA42
Text: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors show n in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Max Type V CBO V CEO M ax V CEIsat 'c V V mA 400 400
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ZTX758
ZTX558
ZTX757
PSA92
ZTX756
PSA93
BF491
ZTX755
ZTX555
ZTX754
PSA42
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bc558c
Abstract: BC212
Text: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t
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BC556A
BC556B
ZTX504
BCY77A
BCY77B
BCY77C
BC212
BC307
BC557A
BC557B
bc558c
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Untitled
Abstract: No abstract text available
Text: Digital is & 5 & m m * ss jm n CEiS : [ 755-fl3Z 79 l1B/B327B6 59/332 70360 R I ìI t «vwvì a p o H c U ' G o n tf£ £ : 51S03J 07S5-.03279233 flilffl • SensorOgpnI Iosz com
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SB754
Abstract: 2SD844
Text: V u =i >PNP=SI£S[^ 2SB754 u ? ï Wf c t f X ë . n l. ÿ : I c = —7 A ftÿt • ÿ ê â Î P 'S Œ ^ 'f â ^ 'o : V cEisa t) = - 0 . 4 V ( f t * ) ( I c = - 4 A ) 1 ^ 3 u- ? : P c = 60W(Tc = 25°C) 2SD844 t n > 7' 'J 7 > ? ') tz &- V) i t „ (Ta = 25°C)
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BH P58
Abstract: sot89 mark code AE ah p96 n58 sot89 sot89 mark code AA
Text: SOT89 IMPIM MEDIUM POWER TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter Type v CEIsat Max ti -E v CBO V VCEO V lc cont) mA mW FCX458 400 400 300 1500 BST 39 400 350 500 1500 P.Ot M in/M ax h Typ MHz Part Mark Code at Iq / V ce mA / Volts Volts at l c / Ib
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FCX458
SXTA42
BF620
BFN18
BST40
BF622
BFN16
FCX495
FCX5550
BCX56
BH P58
sot89 mark code AE
ah p96
n58 sot89
sot89 mark code AA
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Untitled
Abstract: No abstract text available
Text: TO-237 PLASTIC PACKAGE TRANSISTORS PNP J • Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. CSA10130 1 Po 'c (A) 'cm (A) 'ceo (MA) Max ^cs (V) hFE @ <c* (mA) ^CE ^CEISAT] @ ^BE(SAT) «0«) (ns) Max CDIL Case Style
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O-237
O-237-2
TN2905
TN2905A
TN369
TN4030
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ZTX653
Abstract: ZTX749 ZTX650 ZTX751 BCX38B 100C ZTX649 ZTX651 ZTX652 ZTX750
Text: TABLE 8 : NPNiPNP HIGH PERFORMANCE TYPES These transistors offer the ultimate performance for a TO-92 style package, and are suited to audio output stages, lamp driving, general switching applications etc. Type V cbo V Max V CEIsat| Min fT P,o, hFE at Max Max
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ZTX653
ZTX753
ZTX652
ZTX752
ZTX651
ZTX751
ZTX650
ZTX750
ZTX649
ZTX749
ZTX749
ZTX751
BCX38B
100C
ZTX750
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b14 smd diode
Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60
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T0-220
O-263
O-247
O-247
T0-204
24N60
30N60
40N60
25N100
45N100
b14 smd diode
B1108
DIODE SMD b14
smd diode B1100
16N60
B1106
B1112
B1108 D
B1116
IXYS 30N60
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th50vsf1400
Abstract: BA30
Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory
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50VSF1400/1401ACXB
TH50VSF1400/1401ACXB
152-bit
216-bit
48-pin
50VSF1400/1401
th50vsf1400
BA30
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texas instruments tip34
Abstract: texas instruments tip33 TIP33C
Text: TYPES TIP33, TIP33A, TIP33B. TIP33C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X O H m c< tj r FO R POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGN ED FOR COM PLEM ENTARY USE WITH TIP34, TIP34A, TIP34B, TIP34C • 80 W at 25° C Case Temperature
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TIP33,
TIP33A,
TIP33B.
TIP33C
TIP34,
TIP34A,
TIP34B,
TIP34C
texas instruments tip34
texas instruments tip33
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2N5227
Abstract: a5t5227
Text: TYPES 2N5227, A5T5227 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L S 731 1927, M A R C H 1973 S IL E C T t TR A N S IS TO R S ! • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil
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2N5227,
A5T5227
100-mil
-202C
2N5227
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2N5685
Abstract: 2n5686
Text: TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 300 Watts at 25° C Case Temperature • 50-A Rated Continuous Collector Current • Min f j of 2 M Hz at 10 V , 5 A TYPES 2N5685, 2 N 5686 BULLETIN NO. DL-S 7111591, DECEMBER FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S
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2N5685,
2N5686
2N5685
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LH516AZE
Abstract: No abstract text available
Text: S H A R JP L H5 1 6AZE 1 Contents 1 . Description 2 2. Pin Conf ¡{juration 2 3. Truth Table 2 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics .
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DD173SÃ
LH516AZE
001735e)
LH516AZE
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9736D
Abstract: UDN2879W UDN-2878W-2 UDN297
Text: 2 8 7 8 2 8 7 9 v \i> QUAD H IG H -CU RRENT D AR LIN G TO N SW ITCH ES These quad Darlington arrays are designed to serve as interface between low-level logic and peripheral power devices such as sole noids, motors, incandescent displays, heaters, and similar loads of up
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UDN2878W
UDN2879W
UDN2878W-2
2S79W
9736D
UDN-2878W-2
UDN297
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A5T4028
Abstract: purpose of IC 4027 5T4029
Text: TYPES A5T4026 TH R U A5T4029, A8T4026 TH R U A8T4029 P-N-P S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 2 0 0 2 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* FOR GENERAL PURPOSE APPLICATIONS • • • High V BR CEO •■80 V Min (A5T4027, A5T4029, A8T4027, A8T4029)
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A5T4026
A5T4029,
A8T4026
A8T4029
L-STD-202C,
A5T4027,
A8T4027,
A8T4029)
A5T4028
purpose of IC 4027
5T4029
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Untitled
Abstract: No abstract text available
Text: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 fiA maximum standby current • Compatible with JEDEC-standard byte-wide
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IS28F020
32-pin
IS28F020-50PLI
IS28F020-50TI
IS28F020-55PLI
IS28F020-55TI
IS28F020-70PLI
IS28F020-70TI
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