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    Chino-Excel Technology Corp CET453N

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    CET453N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CET453N Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    CET453N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30V-8A

    Abstract: CET453N 8a 817 voltage 67A SOT 23 6
    Text: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)


    Original     		PDF CET453N OT-223 OT-223 30V-8A CET453N 8a 817 voltage 67A SOT 23 6

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    es10 diode

    Abstract: 8a 817 voltage CET453N
    Text: CET453N M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 8 A , R ds on =28itiî2 RDS(ON)=42mQ @ V gs =1 0V. @ V gs =4.5V. • High dense cell design fo r lo w R ds (on ). • Rugged and reliable. • SOT-223 Package. G SOT-223


    OCR Scan     		PDF CET453N 42mfl OT-223 sot-223 es10 diode 8a 817 voltage CET453N