cew 55
Abstract: No abstract text available
Text: =W e9 S H See Pag CAW o R oir / 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 9 ± 0,1 Version R 0,3 ± 0,05 15 min. Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension
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150VDC
cew 55
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Untitled
Abstract: No abstract text available
Text: =W e9 S H e Pag CAW 54 à/to 65 CEW 54 à/to 65 Appellation commerciale / Commercial type CAW 54 L, W, T : ± 0,5 mm 9 ± 0,1 Version R 15 min. 0,3 ± 0,05 Version AR Version W % Ø 0,8 +- 10 0,05 у 30 CARACTERISTIQUES GENERALES Diélectrique Céramique haute tension
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Untitled
Abstract: No abstract text available
Text: I S66WVC4M16ALL I S67WVC4M16ALL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several
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S66WVC4M16ALL
S67WVC4M16ALL
IS66WVC4M16ALL
64Mbit
4Mx16
IS66WVC4M16ALL-7010BLI
54-ball
IS66WVC4M16ALL-7008BLI
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cew 55
Abstract: No abstract text available
Text: I S66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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S66WVC2M16DALL
IS66WVC2M16DALL
32Mbit
2Mx16
IS66WVC2M16DALL-7013BLI
54-ball
IS66WVC2M16DALL-7010BLI
IS66WVC2M16DALL-7008BLI
cew 55
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Untitled
Abstract: No abstract text available
Text: CONDENSATEURS CERAMIQUE DE PUISSANCE POWER CERAMIC CAPACITORS GENERALITES GENERAL INFORMATION SPT 519 SPT 519 Ces condensateurs à diélectrique céramique et sorties par rubans d’argent sont des composants haute tension et fort courant qui permettent de
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BUF410
Abstract: ISO218 transistor BB 112 BUF410FI
Text: BUF410/410FI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS U.L. RECOGNISED ISOWATT218 PACKAGE
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BUF410/410FI
ISOWATT218
E81734
BUF410
BUF410FI
ISO218
transistor BB 112
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Untitled
Abstract: No abstract text available
Text: REPERTOIRE ALPHANUMERIQUE ALPHANUMERIC INDEX 2 Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page BPM 12 BPM 22 BPM 24 BPM 224 C3E C3N C4E C4N C 179 C 180 C 180 L C 180 P C 180 PL C 180 R C 181 C 181 L C 181 P C 181 PL
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Abstract: No abstract text available
Text: REPERTOIRE ALPHANUMERIQUE ALPHANUMERIC INDEX 2 Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page Modèle Page BPM 12 BPM 22 BPM 24 BPM 224 C3E C3N C4E C4N C 179 C 180 C 180 L C 180 P C 180 PL C 180 R C 181 C 181 L C 181 P C 181 PL
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facon capacitors
Abstract: CEC CAPACITORS resistor codification EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD cec EUROFARAD cec 14 cec 2r0 1 CEW65 E24-E48-E96
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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ceramic capacitor Eurofarad X7R
Abstract: CEC CAPACITORS EUROFARAD capacitor datasheet ceramique EUROFARAD cec cea 271 EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD datasheet CECC32101
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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CNX48 U
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 5SE D bbS3T31 QDa01fl3 1 CNX48 T - V - g f OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line D IL envelope. Features
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bbS3T31
QDa01fl3
CNX48
CNX48U.
T-47-85
UNX48
T-41-85
CNX48 U
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D bbS3131 OOEQ^Sl T CNX38 OPTOCOUPLER Optically coupled isolator consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r TTL integrated circuits. Features
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bbS3131
CNX38
CNX38U
bbS3T31
T-41-83
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Untitled
Abstract: No abstract text available
Text: f Z 7 S G S -T H O M S O N Ä T# 5 BUV62A m O T K S FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ F A S T S W IT C H IN G TIM E S LO W S W IT C H IN G LO S S E S LO W BASE C U R R E N T R E Q U IR E M E N T S V E R Y LO W S A T U R A T IO N V O L T A G E A N D
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BUV62A
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FT5759M
Abstract: No abstract text available
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5759M Silicon Darlington Transistor Array ABSOLUTE M A X IM U M R A TIN G S Rating Symbol Condition Value Unit -55 - +1 50 “C T, + 150 °C Collector to Base Voltage VcBO -100 V Emitter to Base Voltage
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FT5759M
FT5759M
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Untitled
Abstract: No abstract text available
Text: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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BUD600
BUD600-SMD
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a
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CNG35
CNG36
OT90B
E90700
003S234
CNG36.
CIMG36.
003SSTS
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BUD636A
Abstract: No abstract text available
Text: v S S r _ BUD636A ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature
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BUD636A
BUD636A
20-Jan-99
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CNX21
Abstract: "kv diode" sot211 121 optocoupler
Text: CNX21 A HIGH-VOLTAGE OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and a silicon n-p-n photo transistor. The base is n o t accessible. Features o f this product: • very high isolation voltage o f 10 kV d.c. .
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CNX21
CNX21
"kv diode"
sot211
121 optocoupler
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transistor SMD wm
Abstract: No abstract text available
Text: BUD636A wm m t Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA
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BUD636A
BUD636A
20-Jan-99
transistor SMD wm
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CNX62
Abstract: BS415 DDS1015
Text: N AMER PHILIPS/DISCRETE 2SE D • b b S S ^ l GOHIQÜ? .1 ■ CNX62 T - H l - S Z HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.
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CNX62
CNX62
E90700
0110b
804/VER
hbS3T31
T-41-83
BS415
DDS1015
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BUF672
Abstract: No abstract text available
Text: _ BUF672 Vishay Telefunken Silicon NPN High Voltage Sw itching Transistor Features • Simple-sWitch-Off Transistor S W O T • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF672
20-Jan-99
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HD H101
Abstract: CNG36 CNG35 SOT-90B SOT90B
Text: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a
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CNG35
CNG36
OT90B
E90700
CNG36.
7Z24Q93
CNG35.
HD H101
CNG36
CNG35
SOT-90B
SOT90B
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Transistor 3TY
Abstract: No abstract text available
Text: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life
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CNG36
OT90B
OT212.
74bbflSl
0DD4fl03
MSA048-2
Transistor 3TY
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philips cnx82a
Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Text: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and
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CNX82A/CNX83A
CNX82Aand
CNX83Aare
OT231
CNX82A
CNX83A.
CNX82A
CNX83A
bL53131
philips cnx82a
CNX83A
DE0805
435A
CNX83
PHHI
BS415
BS7002
25KVDC
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