29BDD160
Abstract: 29LV800 29f400 programming 29F400 29lv800A 29F016 29PDL128 29F400 code Common Flash memory interface Specification 29F040
Text: Common Flash Memory Interface Specification Release 2.0 December 1, 2001 AMD 1 AMD Place, Sunnyvale, CA 94088-3453 1 of 25 CFI SPECIFICATION AGREEMENT This is a royalty-free, reciprocal patent license for parties wishing to adopt the CFI Specification in their products. By making use of this specification, you “User” are agreeing to be bound by the
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29BDD160
Am29BDD160
29PDL128
29LV800)
Am29PDL128
29LV800
29f400
programming 29F400
29lv800A
29F016
29F400 code
Common Flash memory interface Specification
29F040
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M50FW080
Abstract: SST49LF008A BIOS 32 Pin PLCC sst BIOS 32 Pin PLCC FWH1
Text: SST49LF008A / M50FW080 Firmware Hub Device Comparison Application Note April 2008 Using Boh SST CFI and Spansion CFI in a System INTRODUCTION This Application Note is a comparative list of features for the SST49LF0008A and the ST M50FW080 Firmware Hub Devices FWH . Each device is used as BIOS storage and functions as a boot device where the first fetch cycles of the
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SST49LF008A
M50FW080
SST49LF0008A
M50FW080
S72074-00-000
BIOS 32 Pin PLCC
sst BIOS 32 Pin PLCC
FWH1
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lad1
Abstract: stmicroelectronics superflash lad2 BIOS 32 Pin PLCC lad1+12vdc lad2 -12vdc FFBF8002H M50FW016 M50FW080 SST49LF016C
Text: SST49LF016C / M50FW080-M50FW016 Firmware Hub Device Comparison Application Note July 2008 Using Boh SST CFI and Spansion CFI in a System INTRODUCTION This Application Note is a comparative list of features for the SST49LF016C and the ST M50FW080 and M50FW016 Firmware Hub Devices FWH . Each device is used as BIOS storage and functions as a boot device when the first fetch cycles of
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SST49LF016C
M50FW080-M50FW016
M50FW080
M50FW016
S72075-00-000
M50FW080/016
M50FW080/M50FW016
lad1
stmicroelectronics superflash
lad2
BIOS 32 Pin PLCC
lad1+12vdc
lad2 -12vdc
FFBF8002H
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phase controller L120
Abstract: AMD flash ETOX
Text: SHARP PRODUCT PREVIEW Rev. 1.3 LH28F160S3-L10/13 16-M BIT 2MBX8/1 MBx16 Sm art 3 Flash MEMORY • Smart 3 Technology — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP User-Configurable x8 or x16 Operation ■ Common Flash interface (CFI) — Universal & Upgradable Interface
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LH28F160S3-L10/13
16-MBIT
MBx16)
100/130ns
120/150ns
56-Lead
64-Lead
phase controller L120
AMD flash ETOX
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PEB 2055
Abstract: TSN2 SICOFI PEF 2465 moc xxx PSB 7200 Z sad1 smd ITB09533 ITL09531 ITL09532 ITP09463
Text: ICs for Communications Extended PCM Interface Controller EPIC -1 PEB 2055 / PEF 2055 Versions A3 EPIC®-S PEB 2054 / PEF 2054 Versions 1.0 User’s Manual 02.97 PEB 2055 PEF 2055 Revision History: User’s Manual 02.97 Previous Release: Technical Manual 02.92 Editorial Update
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lr 4087
Abstract: sensitivity of ldr LDR Datasheet ds24 monitor plc projects CODE16 DC24 DC32 DF64
Text: ARM IAR Assembler Reference Guide for Advanced RISC Machines Ltd’s ARM Cores AARM-6 COPYRIGHT NOTICE Copyright 2002 IAR Systems. All rights reserved. No part of this document may be reproduced without the prior written consent of IAR Systems. The software described in this document is furnished under a license and
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32-bit
lr 4087
sensitivity of ldr
LDR Datasheet
ds24 monitor
plc projects
CODE16
DC24
DC32
DF64
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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SC2120
Abstract: CBN-70
Text: ICs for Communications Mini IOM -2 Controller MICO PEF 2015 Version 1.1 Data Sheet 12.97 PEF2015 Revision History: Current Version: Data Sheet 12.97 Previous Version: Preliminary Data Sheet 05.97 Page in previous Version Page (in new Version) Subjects (major changes since last revision)
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PEF2015
P-DSO-28
SC2120
CBN-70
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RWS 434 RF receiver
Abstract: sad1 smd PEF 4266 mtxa1 cm 45-12 SC11 MTX-A1 intel 4265 moc30 siemens 4261
Text: ICs for Communications Mini IOM -2 Controller MICO PEF 2015 Version 1.1 Data Sheet 12.97 DS 1 PEF 2015 Revision History: Current Version: Data Sheet 12.97 Previous Version: Preliminary Data Sheet 05.97 Page Page in previous (in new Version Version) Subjects (major changes since last revision)
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ITD05871
P-DSO-28
RWS 434 RF receiver
sad1 smd
PEF 4266
mtxa1
cm 45-12
SC11
MTX-A1
intel 4265
moc30
siemens 4261
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SST39WF160x
Abstract: SST39WF1601-90-4C-B3K SST39WF1601-90-4I-B3KE SST39WF1601 SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
48-wfbga-MBQ-5x6-32mic-0
48-ball
S71297-01-000
SST39WF160x
SST39WF1601-90-4C-B3K
SST39WF1601-90-4I-B3KE
SST39WF1602
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a103 636 transistor
Abstract: BF274 SST39WF1601-90-4C-MBQE SST39WF1601 SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
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SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
S71297-02-000
a103 636 transistor
BF274
SST39WF1601-90-4C-MBQE
SST39WF1602
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39WF800A
Abstract: SST39WF800A SST39WF800B
Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
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SST39WF800B
S71344-02-000
39WF800A
SST39WF800A
SST39WF800B
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MO-222
Abstract: 39WF800A SST39WF800A SST39WF800B
Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800B Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
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SST39WF800B
48-wfbga-MBQ-5x6-32mic-0
48-ball
S71344-00-000
MO-222
39WF800A
SST39WF800A
SST39WF800B
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amd 15h power
Abstract: AM29LV640
Text: Implementing a Common Layout for AMD MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with AMD MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both AMD and
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32Mb-128Mb
64Megabit
amd 15h power
AM29LV640
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SST39WF800A
Abstract: 39WF800A
Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
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SST39WF800A
SST39WF800A1
S71258-06-000
SST39WF800A
39WF800A
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XX98
Abstract: SST39WF800A
Text: 8 Mbit x16 Multi-Purpose Flash SST39WF800A SST39WF800A1.8V 8Mb (x16) MPF memory Data Sheet FEATURES: • Organized as 512K x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
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SST39WF800A
SST39WF800A1
S71258-05-000
XX98
SST39WF800A
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SST39VF080
Abstract: SST39LF080
Text: 8 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39VF080 SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories EOL Data Sheet FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 • Superior Reliability
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SST39LF080
SST39VF080
SST39LF/VF0803
SST39LF080
S71146
SST39LF/VF016
S71146-07-EOL
SST39VF080
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SST39VF1601
Abstract: SST39LF160 SST39VF160 f173
Text: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability
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SST39LF160
SST39VF160
SST39LF/VF1603
SST39LF160
S71145-04-000
SST39VF1601
SST39VF160
f173
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f333
Abstract: SST36VF1601 2F312 F2311
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36V160116Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
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SST36VF1601
SST36V160116Mb
SST36VF1601:
48ba-tfbga-BK-8x10-300mic-ILL
MO-210,
48-BALL
S71142-06-000
f333
SST36VF1601
2F312
F2311
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Untitled
Abstract: No abstract text available
Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L160UA/F49L160BA
152x8
576x16
9s/11s
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M28W160
Abstract: JESD97 M28W160C M28W160CB M28W160CT Ai329
Text: M28W160CT M28W160CB 16 Mbit 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W160CT
M28W160CB
100ns
TFBGA46
TSOP48
M28W160
JESD97
M28W160C
M28W160CB
M28W160CT
Ai329
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M28W800CB
Abstract: M28W800CT
Text: M28W800CT M28W800CB 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W800CT
M28W800CB
512Kb
100ns
TFBGA46
TSOP48
M28W800CB
M28W800CT
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sample code read and write flash memory spansion
Abstract: AMD29LV SPANSION date code format spansion S29GL064 sample code write buffer spansion intel MLC flash Intel 56 TSOP PL32LM amd 15h power S29GL
Text: Implementing a Common Layout for Spansion MirrorBitTM and Intel StrataFlashTM Memory Devices Application Note Overview This document describes the benefits of designing with Spansion MirrorBit Flash memory and the ease with which system designers can layout a board to accommodate high-density flash devices from both
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S29GL
32Mb-256Mb
sample code read and write flash memory spansion
AMD29LV
SPANSION date code format
spansion S29GL064
sample code write buffer spansion
intel MLC flash
Intel 56 TSOP
PL32LM
amd 15h power
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555H
Abstract: SST36VF1601E SST36VF1602E
Text: 16 Mbit x8/x16 Concurrent SuperFlash SST36VF1601E / SST36VF1602E SST36VF1601E / 1602E16Mb (x8/x16) Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 or 2M x8 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection
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x8/x16)
SST36VF1601E
SST36VF1602E
1602E16Mb
SST36VF1601E:
SST36VF1602E:
S71274-03-000
555H
SST36VF1602E
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