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    CGH40006P Search Results

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    CGH40006P Price and Stock

    MACOM CGH40006P-AMP

    CGH40006P DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40006P-AMP Box 2 1
    • 1 $726.29
    • 10 $726.29
    • 100 $726.29
    • 1000 $726.29
    • 10000 $726.29
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    Richardson RFPD CGH40006P-AMP 1
    • 1 -
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    MACOM CGH40006P

    RF MOSFET HEMT 28V 440109
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40006P Tray 1
    • 1 $79.97
    • 10 $65.575
    • 100 $65.575
    • 1000 $65.575
    • 10000 $65.575
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    Mouser Electronics CGH40006P
    • 1 $99.31
    • 10 $90.66
    • 100 $86.5
    • 1000 $86.5
    • 10000 $86.5
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    Verical CGH40006P 1,235 1
    • 1 $123.75
    • 10 $123.75
    • 100 $123.75
    • 1000 $123.75
    • 10000 $123.75
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    Richardson RFPD CGH40006P 1,235 1
    • 1 $123.73
    • 10 $123.73
    • 100 $123.73
    • 1000 $123.73
    • 10000 $123.73
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    CGH40006P Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40006P Cree RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG Original PDF
    CGH40006P-AMP Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF
    CGH40006P-AMP Wolfspeed CGH40006P DEV BOARD WITH HEMT Original PDF
    CGH40006P-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P Original PDF

    CGH40006P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006

    CGH40006

    Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P

    Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB

    cgh40006p

    Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS