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    CGH60015D Search Results

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    CGH60015D Price and Stock

    MACOM CGH60015D-GP4

    RF MOSFET HEMT 28V DIE
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    DigiKey CGH60015D-GP4 Tray 60 10
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    • 10 $85.675
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    Mouser Electronics CGH60015D-GP4 50
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    • 100 $76.5
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    Richardson RFPD CGH60015D-GP4 10
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    • 10 $114.23
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    CGH60015D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH60015D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE Original PDF

    CGH60015D Datasheets Context Search

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    CGH60015D

    Abstract: bonding wire cree
    Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60015D CGH60015D CGH6001 bonding wire cree PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,


    Original     		CGH60015D CGH60015D CGH6001 PDF

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF