Datasheet Archive: CGHV96 datasheets

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MACOM CGHV96130F RF MOSFET HEMT 40V 440217
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96130F	Tray	50		1	1 $1164.79 10 $1164.79 100 $1164.79 1000 $1164.79 10000 $1164.79	Buy Now
Mouser Electronics	CGHV96130F		50			1 $806.53 10 $794.03 100 $794.03 1000 $794.03 10000 $794.03	Buy Now
Richardson RFPD	CGHV96130F		2		1	1 $1743.18 10 $1743.18 100 $1743.18 1000 $1743.18 10000 $1743.18	Buy Now
MACOM CGHV96050F2 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96050F2	Tray	30		1	1 $766.79 10 $766.79 100 $766.79 1000 $766.79 10000 $766.79	Buy Now
Mouser Electronics	CGHV96050F2					1 $860.83 10 $860.83 100 $860.83 1000 $860.83 10000 $860.83	Get Quote
Richardson RFPD	CGHV96050F2				1	1 $932.18 10 $932.18 100 $932.18 1000 $932.18 10000 $932.18	Buy Now
MACOM CGHV96050F1 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96050F1	Tray	28		1	1 $475.75 10 $475.75 100 $475.75 1000 $475.75 10000 $475.75	Buy Now
Mouser Electronics	CGHV96050F1					1 - 10 - 100 $484.76 1000 $484.76 10000 $484.76	Get Quote
Richardson RFPD	CGHV96050F1		30		1	1 $395.21 10 $395.21 100 $395.21 1000 $395.21 10000 $395.21	Buy Now
MACOM CGHV96100F2-AMP CGHV96100F2 DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2-AMP	Box	3		1	1 $1378.61 10 $1378.61 100 $1378.61 1000 $1378.61 10000 $1378.61	Buy Now
Richardson RFPD	CGHV96100F2-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV96130F-AMP RF MOSFET HEMT 40V 440217
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96130F-AMP	Bulk	2		1	1 $1475.38 10 $1475.38 100 $1475.38 1000 $1475.38 10000 $1475.38	Buy Now
Richardson RFPD	CGHV96130F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CGHV96 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
CGHV96050F1	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210	Original	PDF
CGHV96050F1-AMP	Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF
CGHV96050F1-AMP	Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF
CGHV96050F1-TB	Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050	Original	PDF
CGHV96050F2	Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W	Original	PDF
CGHV96050F2-AMP	Wolfspeed	CGHV96050F2 DEV BOARD WITH HEMT	Original	PDF
CGHV96050F2-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2	Original	PDF
CGHV96100F2	Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W	Original	PDF
CGHV96100F2-AMP	Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF
CGHV96100F2-AMP	Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF
CGHV96100F2-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2	Original	PDF
CGHV96130F	Wolfspeed	100W GAN HEMT 7.9-9.6GHZ 50-OHM	Original	PDF
CGHV96130F-AMP	Wolfspeed	8.4-9.6GHZ, AMP W/ CGHV96100F2	Original	PDF

CGHV96 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F2 Abstract: No abstract text available Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1	PDF
40VPulse Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
Untitled Abstract: No abstract text available Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Untitled Abstract: No abstract text available Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Untitled Abstract: No abstract text available Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
CGHV96050F2 Abstract: CGHV96 Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
CGHV96100F2 Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F1 Abstract: No abstract text available Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Untitled Abstract: No abstract text available Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96100F1 Abstract: taconic Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic	PDF

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CGHV96 Datasheets (13)

CGHV96 Datasheets Context Search

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CGHV96050F2

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40VPulse

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CGHV96050F2

CGHV96100F2

CGHV96050F1

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CGHV96100F1