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    CGHV96 Search Results

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    CGHV96 Price and Stock

    MACOM

    MACOM CGHV96100F2-AMP

    CGHV96100F2 DEV BOARD WITH HEMT
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    DigiKey CGHV96100F2-AMP Box 2 1
    • 1 $1691.62
    • 10 $1691.62
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    Richardson RFPD CGHV96100F2-AMP 1
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    MACOM CGHV96050F2-AMP

    CGHV96050F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F2-AMP Box 1 1
    • 1 $1152.52
    • 10 $1152.52
    • 100 $1152.52
    • 1000 $1152.52
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    Mouser Electronics CGHV96050F2-AMP 1
    • 1 $1106.46
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    Richardson RFPD CGHV96050F2-AMP 1
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    MACOM CGHV96050F1-AMP

    CGHV96050F1 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F1-AMP Box 2
    • 1 -
    • 10 $1152.525
    • 100 $1152.525
    • 1000 $1152.525
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    Richardson RFPD CGHV96050F1-AMP 1
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    MACOM CGHV96130F

    GaN FETs Amplifier,130W,GaN HEMT,40V,8.4-9.6GHz
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    Mouser Electronics CGHV96130F 11
    • 1 $1251.61
    • 10 $1251.61
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    Verical CGHV96130F 8 1
    • 1 $1743.2
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    Richardson RFPD CGHV96130F 8 1
    • 1 $1743.18
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    MACOM CGHV96100F2

    GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV96100F2
    • 1 $1496.23
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    Verical CGHV96100F2 12 1
    • 1 $1496.2
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    Richardson RFPD CGHV96100F2 12 1
    • 1 $1496.16
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    Find more CGHV96 price and stock on Findchips.com

    CGHV96 Datasheets (13)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    CGHV96050F1
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210 Original PDF
    CGHV96050F1-AMP
    		Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-AMP
    		Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF
    CGHV96050F1-TB
    		Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050 Original PDF
    CGHV96050F2
    		Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF
    CGHV96050F2-AMP
    		Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF
    CGHV96050F2-TB
    		Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF
    CGHV96100F2
    		Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W Original PDF
    CGHV96100F2-AMP
    		Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-AMP
    		Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF
    CGHV96100F2-TB
    		Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2 Original PDF
    CGHV96130F
    		Wolfspeed 100W GAN HEMT 7.9-9.6GHZ 50-OHM Original PDF
    CGHV96130F-AMP
    		Wolfspeed 8.4-9.6GHZ, AMP W/ CGHV96100F2 Original PDF

    CGHV96 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96050F2

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 PDF

    40VPulse

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse PDF

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    CGHV96050F2

    Abstract: CGHV96
    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    CGHV96100F2

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96050F1

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96100F1

    Abstract: taconic
    Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic PDF