CGHV96100F2 Search Results

CGHV96100F2 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV96100F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W	Original	PDF		12
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.57MB
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.24MB
CGHV96100F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2	Original	PDF		12

CGHV96100F2 Price and Stock

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MACOM CGHV96100F2 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2	Tray			1	1 $1269.39 10 $1269.39 100 $1269.39 1000 $1269.39 10000 $1269.39	Buy Now
Mouser Electronics	CGHV96100F2					1 $1496.23 10 $1496.23 100 $1496.23 1000 $1496.23 10000 $1496.23	Get Quote
Richardson RFPD	CGHV96100F2				1	1 $1496.16 10 $1496.16 100 $1496.16 1000 $1496.16 10000 $1496.16	Buy Now
MACOM CGHV96100F2-AMP CGHV96100F2 DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2-AMP	Box			1	1 $1691.62 10 $1691.62 100 $1691.62 1000 $1691.62 10000 $1691.62	Buy Now
Richardson RFPD	CGHV96100F2-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CGHV96100F2 Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	CGHV96100F2		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGHV96100F2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
40VPulse Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96100F2 Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF