CGHV96100F2 Search Results
CGHV96100F2 Datasheets (4)
Part |
ECAD Model |
Manufacturer |
Description |
Datasheet Type |
PDF |
PDF Size |
Page count |
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CGHV96100F2 |
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RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W | Original | 12 | |||
CGHV96100F2-AMP |
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CGHV96100F2 DEV BOARD WITH HEMT | Original | 1.57MB | |||
CGHV96100F2-AMP |
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CGHV96100F2 DEV BOARD WITH HEMT | Original | 1.24MB | |||
CGHV96100F2-TB |
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RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2 | Original | 12 |
CGHV96100F2 Price and Stock
MACOM CGHV96100F2RF MOSFET HEMT 40V 440210 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96100F2 | Tray | 1 |
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CGHV96100F2 |
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CGHV96100F2 | 1 |
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Buy Now | |||||||
MACOM CGHV96100F2-AMPCGHV96100F2 DEV BOARD WITH HEMT |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96100F2-AMP | Box | 1 |
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CGHV96100F2-AMP | 1 |
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Wolfspeed CGHV96100F2Transistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV96100F2 | 24 |
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Get Quote |
CGHV96100F2 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 | |
40VPulseContextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse | |
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 | |
CGHV96100F2Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 | |
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison |
Original |
CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 |