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    CGY98 Search Results

    CGY98 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGY98 Infineon Technologies CGY 98 is a two stage broadband Power Amplifier (800..2000MHz) which can be used for GSM, AMPS or PCN applications Original PDF
    CGY98 Infineon Technologies RF Amplifier, General purpose amplifier, Single channel, Chip, 2000 MHz, SCT-595, 5-Pin Original PDF
    CGY98 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    CGY98 Siemens GaAs MMIC (Broadband Power Amplifier [ 800..2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V) Original PDF
    CGY98 E6400 Infineon Technologies RF-Amplifier, Broadband Power Amplifier Original PDF
    CGY98 E6784 Infineon Technologies RF-Amplifier, Broadband Power Amplifier Original PDF

    CGY98 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GSM vco

    Abstract: gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210
    Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


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    PDF EHT09097 EHT09123 EHT09124 GSM vco gsm 900 amplifier BFP420 Transistor BFR 98 BAS40-04 BFR93AW LQG21N Dual Band Power Amplifier 1 Schematic of the CGY K 3264 transistor IC210

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    IPC-9501

    Abstract: p0603 CGY98 DCS1800 Q62702-G0079 SCT595 infenion
    Text: GaAs MMIC CGY 98 Datasheet * Broadband Power Amplifier [ 800.2000 Mhz ] * GSM,AMPS or PCN * Operating voltage range: 2.7 to 5.0 V * Pout = 35.0dBm at Vd=3.5V


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    PDF CGY98 Q62702-G0079 SCT595 IPC-9501 p0603 CGY98 DCS1800 Q62702-G0079 SCT595 infenion

    gsm vco

    Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
    Text: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    Original
    PDF EHT09097 EHT09123 EHT09124 gsm vco bfr93aw schematic gsm 900 amplifier k 3531 transistor

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


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    PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    siemens 350 98

    Abstract: cgy siemens marking RF 98 CGY98 DCS1800 SCT595 RF 98 marking
    Text: CGY 98 GaAs MMIC l l l l l l Broadband Power Amplifier [ 800.2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V Pout = 35.0dBm at Vd=3.5V Overall power added efficiency 55 % Easy external matching ESD: Electrostatic discharge sensitive device,


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    PDF CGY98 SCT595 siemens 350 98 cgy siemens marking RF 98 CGY98 DCS1800 SCT595 RF 98 marking

    D2 DIN 6784

    Abstract: siemens 350 98 Siemens RF
    Text: SIEMENS CGY 98 GaAs MMIC • . • • • • Broadband Power Amplifier [ 800.2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V Pout = 35.0dBm at Vd=3.5V Overall power added efficiency 55 % Easy external matching ESD: Electrostatic discharge sensitive device,


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    PDF CGY98 SCT595 D2 DIN 6784 siemens 350 98 Siemens RF

    IH33

    Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
    Text: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 98 GaAs MMIC • • • • • • Broadband Power Amplifier [ 800.2000 Mhz ] GSM,AMPS or PCN Operating voltage range: 2.7 to 5.0 V Pout = 35.0dBm at Vd=3.5V Overall power added efficiency 55 % Easy external matching ESD: Electrostatic discharge sensitive device,


    OCR Scan
    PDF CGY98 SCT595