pci9030-aa60pi
Abstract: PLX pci9052 PCI9080-3 PCI9054-AB50PI PCI9052 PLX PCI9052 QFP PCI9030 application on PCI9052 PCI9030-AA60BI PCI9060SD-1A
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN PCN #: A050801 Device Marking Product Affected: See list below Date: May 8, 2001 Manufacturing Location Affected: N/A Date Effective: June 1, 2001 MEANS OF DISTINGUISHING CHA NGED DEVICES X Product Mark Υ Back Mark
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A050801
IOP480
1043-10030-SPC.
IOP480-AA66PI
IOP480
IOP480-AA66BI
pci9030-aa60pi
PLX pci9052
PCI9080-3
PCI9054-AB50PI
PCI9052
PLX PCI9052 QFP
PCI9030
application on PCI9052
PCI9030-AA60BI
PCI9060SD-1A
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Temex Ceramics
Abstract: No abstract text available
Text: CHA Series RF & Microwave Capacitors, RoHS Compliant DESCRIPTION Low ESR, Ultra High-Q Highest working voltage in class - 200V Porcelain Capacitors Laser Marked optional High Self-Resonance Frequencies CIRCUIT APPLICATIONS • • • • Cellular Base Station Amplifiers
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/-30ppm/Â
100pF
Temex Ceramics
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CHB capacitor Series
Abstract: 501CHB CHA capacitor Series 501 CHB cfb temex cr 510 Capacitor chb marking CEA chb temex STANDARD CERAMIC CHIP CAPACITORS temex
Text: HF & MICROWAVE CERAMIC CHIP CAPACITORS CHA-CHB-CFB Series CHA-CHB-CFB SERIES Ceramic chips for microwave applications ultra HIGH “Q” low ESR Description The high-Q characteristics of these monolithic chip capacitors make them ideally suited for applications
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Temex Ceramics
Abstract: No abstract text available
Text: C lassic- H iQ Series, Low ESR RF & Microwave Capacitors, RoHS Compliant DESCRIPTION Low ESR, Ultra High-Q Highest working voltage in class - 1'500V Porcelain Capacitors Laser Marked optional High Self-Resonance Frequencies CIRCUIT APPLICATIONS • • •
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/-30ppm/Â
100pF
000pF
Temex Ceramics
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501 CHB SPECIFICATIONS
Abstract: temex CHB 501 CHB Temex CERAMICS 501-CHB cha marking code temex CHB 501 120 501CHB 501 CHB 9r1 chb temex
Text: C lassic- H iQ Series, Low ESR RF & Microwave Capacitors, RoHS Compliant DESCRIPTION Low ESR, Ultra High-Q Highest working voltage in class - 1'500V Porcelain Capacitors Laser Marked optional High Self-Resonance Frequencies CIRCUIT APPLICATIONS • • •
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100pF
000pF
501 CHB SPECIFICATIONS
temex CHB
501 CHB
Temex CERAMICS
501-CHB
cha marking code
temex CHB 501 120
501CHB
501 CHB 9r1
chb temex
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K3024
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Package ■ Features • Code U-G2 • Pin Name 1: Gate 2: Drain 3: Source • Avalanche energy capability guaranteed • High-speed switching
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2002/95/EC)
2SK3024
K3024
K3024
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2SJ0582
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name
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2002/95/EC)
2SJ0582
J0582
2SJ0582
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k3025
Abstract: 2SK3025
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK3025 Silicon N-channel power MOS FET • Package ■ Features • Code U-DL • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na tin nc ue e/ d • Avalanche energy capability guaranteed
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2002/95/EC)
2SK3025
K3025
k3025
2SK3025
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k3025
Abstract: 2SK3025
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK3025 Silicon N-channel power MOS FET • Package ■ Features • Code U-DL • Pin Name 1: Gate 2: Drain 3: Source ■ Applications ue pl d in an c se ed lud pl vi an m m es
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2002/95/EC)
2SK3025
k3025
2SK3025
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K3024
Abstract: 2SK3024
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3024 Silicon N-channel power MOSFET • Package ■ Features • Code U-G2 • Pin Name 1: Gate 2: Drain 3: Source ■ Applications ue pl d in an c se ed lud pl vi an m m es si
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2002/95/EC)
2SK3024
K3024
2SK3024
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2SJ0582
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name 1: Gate
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2002/95/EC)
2SJ0582
2SJ0582
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Untitled
Abstract: No abstract text available
Text: TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8214-H High-Efficiency DC／DC Converter Applications CCFL Inverters • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.0 nC (typ.)
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TPC8214-H
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CHB capacitor Series
Abstract: ADS7251 ADS7851
Text: ADS7251 ADS7851 www.ti.com SBAS587 – JANUARY 2014 12-Bit, 2-MSPS and 14-Bit, 1.5-MSPS, Dual, Differential Input, Simultaneous-Sampling, Analog-to-Digital Converters with Internal Reference Check for Samples: ADS7251, ADS7851 FEATURES DESCRIPTION • •
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ADS7251
ADS7851
SBAS587
12-Bit,
14-Bit,
ADS7251,
ADS7251
ADS7851
CHB capacitor Series
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tpc8214-h
Abstract: TPC8214 TPC82
Text: TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8214-H High-Efficiency DC／DC Converter Applications CCFL Inverters • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 2.0 nC (typ.)
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TPC8214-H
tpc8214-h
TPC8214
TPC82
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CHB capacitor Series
Abstract: ADS7251 ADS7851
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents ADS7251, ADS7851 SBAS587A – JANUARY 2014 – REVISED APRIL 2014 ADS7x51 12-Bit, 2-MSPS and 14-Bit, 1.5-MSPS, Dual, Differential Input, SimultaneousSampling, Analog-to-Digital Converters with Internal Reference
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ADS7251,
ADS7851
SBAS587A
ADS7x51
12-Bit,
14-Bit,
ADS7251
ADS7851
12-bit
CHB capacitor Series
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TPC8201
Abstract: No abstract text available
Text: TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) l High forward transfer admittance
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TPC8201
TPC8201
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Untitled
Abstract: No abstract text available
Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Low drain−source ON resistance Unit: mm : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)
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TPC8303
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TPC8201
Abstract: cha marking code
Text: TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π •MOSVI TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) l High forward transfer admittance
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TPC8201
TPC8201
cha marking code
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name 1: Gate
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2002/95/EC)
2SJ0582
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1a4 capacitor
Abstract: cha marking code 1a3 capacitor
Text: THIRD ANGLE PROJECTION ITEM E CQ E » » » » » « « " » » •i » « » » '• » » » « 1A 1 1A 1 1A1 1A1 1A 2 1A 2 1A3 1A 3 1A4 1A5 1A6 1A 8 1A 1 1A1 1A1 1A 1 1A2 1A2 1A 3 1A3 1A4 | CODE 0 3 2 3 53 8 3 23 7 3 33 9 3 7 3 6 3 8 3 2 3 0 4 24 5 4 8 4
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cha marking code
Abstract: No abstract text available
Text: B AL 99 Silicon Switching Diode Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A L 99 JF Q 6 2 7 0 2 -A 6 1 1 Q 62 702-A 687 S O T 23 Maximum ratings Parameter Symbol Ratings Unit R e ve rse voltage P e ak reverse voltage
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION ITEM CAP. RATED CODE V O LT A G E E C Q E 1 A 1 0 3 B 1 A 1 2 3 () B n B ii B ii » « » 1A 1 5 3 0 1 A 1 8 3 () 0. 1 2 5 VAC D IM E N S IO N S L (U F) 01 7. 9 0 .0 1 5 ii 0 .0 1 8 ii 4. 0. 022 ii i 027 11 « 1 A 2 2 3 () B » 1 A 2 7 3 ()
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-099R S8 Ordering Code
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14-099R
Q62702-A0042
14-099R
OT-143
EHA07012
fl535bQ5
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WHV 562 J
Abstract: WHV 822 J
Text: THIRD ANGLE PROJECTIO N [ A L T E R A T IO N I T E M CODE L 18.0 // // II If II II II II II II II 1/ 1/ // 1/ u u DIMENSIONS T H S 10.0 6. 5 1 3 .5 6 5 n u 7 1/ a 6 5 7 0 1/ II // 13.0 13.5 // 14.0 // 13.5 » II n il a h 14.5 12.5 it it li a /i il li 13.0
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81320VB
83920VB
800VDC
voltagexl50%
1500VAC
30000MÜ
500VDC.
10kHz
800VDC
WHV 562 J
WHV 822 J
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