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    TPC82 Price and Stock

    Toshiba America Electronic Components TPC8228-H,LQ

    MOSFET 2N-CH 60V 3.8A 8SOP
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    Mouser Electronics TPC8228-H,LQ
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    Toshiba America Electronic Components TPC8227-H,LQ

    MOSFET 2N-CH 40V 5.1A 8SOP
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    Mouser Electronics TPC8227-H,LQ 2,479
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    Vishay Semiconductors TPC8.2HM3-87A

    TVS DIODE 6.63VWM 12.5VC TO277A
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    DigiKey TPC8.2HM3-87A Reel 6,500
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    Vishay Semiconductors TPC8.2HM3-86A

    TVS DIODE 6.63VWM 12.5VC TO277A
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    DigiKey TPC8.2HM3-86A Reel 1,500
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    Toshiba America Electronic Components TPC8221-H,LQ(S

    MOSFET 2N-CH 30V 6A 8SOP
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    TPC82 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8201 Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    TPC8201 Toshiba Original PDF
    TPC8201 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8201 Toshiba N-Channel MOSFET Original PDF
    TPC8201 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8201 Toshiba Scan PDF
    TPC8202 Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    TPC8202 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8202 Toshiba Original PDF
    TPC8202 Toshiba N-Channel MOSFET Original PDF
    TPC8202 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8202 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS VI) Scan PDF
    TPC8202 Toshiba Matched Pair of N-Channel Enhancement MOSFETs Scan PDF
    TPC8203 Toshiba Original PDF
    TPC8203 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8203 Toshiba Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Original PDF
    TPC8203 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8203 Toshiba Scan PDF
    TPC8204 Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    TPC8204 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    TPC82 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)


    Original     		PDF TPC8209

    Untitled

    Abstract: No abstract text available
    Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Unit: mm Small footprint due to small and thin package z Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)


    Original     		PDF TPC8209

    TPC8207

    Abstract: A1930
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 TPC8207 A1930

    TPC8214-H

    Abstract: TPC8214
    Text: TPC8214-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSIII TPC8214-H ○ 高効率 DC／DC コンバータ用 ○ CCFL インバータ用 • 小型薄型で実装面積が小さい。 • スイッチングスピードが速い。


    Original     		PDF TPC8214-H 20070701-JA TPC8214-H TPC8214

    tpc8213

    Abstract: TPC8213-H TPC82
    Text: TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8213-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package


    Original     		PDF TPC8213-H tpc8213 TPC8213-H TPC82

    Untitled

    Abstract: No abstract text available
    Text: TPC8228-H MOSFET シリコンNチャネルMOS形 U-MOS-H TPC8228-H 1. 用途 • DC-DCコンバータ用 • CCFLインバータ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。 (3) ゲート入力電荷量が小さい。: QSW = 2.6 nC (標準)


    Original     		PDF TPC8228-H

    TPC8212-H

    Abstract: TPC8212
    Text: TPC8212-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8212-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package


    Original     		PDF TPC8212-H TPC8212-H TPC8212

    A1930

    Abstract: TPC8207
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207 A1930 TPC8207

    TPC8201

    Abstract: cha marking code
    Text: TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π •MOSVI TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) l High forward transfer admittance


    Original     		PDF TPC8201 TPC8201 cha marking code

    Untitled

    Abstract: No abstract text available
    Text: TPC8228-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8228-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 2.6 nC (typ.) (4) (5) (6) Low drain-source on-resistance: RDS(ON) = 38 mΩ (typ.)


    Original     		PDF TPC8228-H

    TPC82

    Abstract: No abstract text available
    Text: TPC8229-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8229-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)


    Original     		PDF TPC8229-H TPC82

    Untitled

    Abstract: No abstract text available
    Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)


    Original     		PDF TPC8209

    Untitled

    Abstract: No abstract text available
    Text: TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC8206 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)


    Original     		PDF TPC8206

    Untitled

    Abstract: No abstract text available
    Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Small footprint due to small thin package. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPC8207

    TPC8203

    Abstract: No abstract text available
    Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance


    Original     		PDF TPC8203 TPC8203

    Untitled

    Abstract: No abstract text available
    Text: TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC8206 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)


    Original     		PDF TPC8206

    TPC8208

    Abstract: No abstract text available
    Text: TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8208 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)


    Original     		PDF TPC8208 TPC8208

    Untitled

    Abstract: No abstract text available
    Text: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance


    Original     		PDF TPC8203

    TPC8210

    Abstract: No abstract text available
    Text: TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS III TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		PDF TPC8210 TPC8210

    TPC8209

    Abstract: No abstract text available
    Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)


    Original     		PDF TPC8209 TPC8209

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF TPC8202 10//A 20kfl)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance


    OCR Scan     		PDF TPC8204

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR t p t SILICON N CHANNEL MOS TYPE tt-MOSVI f t ? n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ü g (ON) —41m n (Typ.)


    OCR Scan     		PDF TPC8202 20ki2) --16V,

    TPC150A

    Abstract: No abstract text available
    Text: 7 1 C d J TTETSB? GOGMflTb T W'iJ'-fl-iS G S-^THOMSON THOMSON SEMICONDUCTORS _ trisil XP telephone protection •r m Type* P = 15 W / TPC62A TPC62B TPC68A TPC 68B TPC75A TPC75B TPC82A TPC82B TPC 91A TPC 91B TPC100A TPC100B TPC110A TPC HOB


    OCR Scan     		PDF TPC62A TPC62B TPC68A TPC75A TPC75B TPC82A TPC82B TPC100A TPC100B TPC110A TPC150A