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    CHA209199F Search Results

    CHA209199F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CHA2091-99F/00 United Monolithic Semiconductors 36-40GHz Low Noise Amplifier Original PDF

    CHA209199F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CHA2091

    Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22
    Text: CHA2091 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Vd Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. IN OUT Vg 1 It is supplied in chip form. Gain dB Main Features • Broad band performance 36-40GHz ■ 3.0dB noise figure, 36-40GHz


    Original
    PDF CHA2091 36-40GHz CHA2091 36-40GHz 20dBm DSCHA20919340 MS11 MS12 MS21 MS22 PS11 PS12 PS22

    CHA209199F

    Abstract: CHA2091
    Text: CHA2091 RoHS COMPLIANT 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges


    Original
    PDF CHA2091 36-40GHz CHA2091 36-40GHz 20dBm DSCHA20917150 CHA209199F

    PPH25X

    Abstract: No abstract text available
    Text: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


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    PDF

    CHA2091

    Abstract: No abstract text available
    Text: CHA2091 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and


    Original
    PDF CHA2091 36-40GHz CHA2091 36-40GHz 20dBm DSCHA20917150

    Untitled

    Abstract: No abstract text available
    Text: CHA2091 RoHS COMPLIANT 36-40GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2091 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges


    Original
    PDF CHA2091 36-40GHz CHA2091 36-40GHz 20dBm DSCHA20917150