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    CHIP 66 LOW NOISE AMPLIFIER Search Results

    CHIP 66 LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    CHIP 66 LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    nec ne3

    Abstract: NE32500 NE32500M NE32500N
    Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 • GATE LENGTH: LG = 0.20 µm


    Original     		NE32500 NE32500 NE32500M NE32500N 24-Hour nec ne3 NE32500M NE32500N PDF

    NE27200

    Abstract: No abstract text available
    Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE27200 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ


    Original     		NE27200 NE27200 3e-13 3e-12 1e-12 033e-12 PDF

    NE27200

    Abstract: FC 0137 NEC Ga FET
    Text: C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE27200 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ


    Original     		NE27200 NE27200 FC 0137 NEC Ga FET PDF

    NE32500M

    Abstract: NE3250 ka band power fet NE32500 NE32500N nf 27
    Text: NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES NE32500 OUTLINE DIMENSIONS Units in µm • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 58 5.5 36.5 13 66 25 13 µm • GATE LENGTH: LG = 0.20 µ


    Original     		NE32500 NE32500 24-Hour NE32500M NE3250 ka band power fet NE32500N nf 27 PDF

    HMC-ALH369

    Abstract: No abstract text available
    Text: HMC-ALH369 v00.1007 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2.0 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC462 v01.0412 Amplifiers - Low Noise Amplifiers - Chip GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 is ideal for: Noise Figure: 2 dB • Test Instrumentation Gain: 15 dB • Microwave Radio & VSAT P1dB +15.5 dBm


    Original     		HMC462 HMC462 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC462 v01.0412 AMPLIFIERS - LOW NOISE AMPLIFIERS - CHIP GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462 is ideal for: Noise Figure: 2 dB • Test Instrumentation Gain: 15 dB • Microwave Radio & VSAT P1dB +15.5 dBm


    Original     		HMC462 HMC462 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 HMCALH369 PDF

    HMC-ALH369

    Abstract: 9DB11 chip 66 low noise amplifier mmic 137
    Text: HMC-ALH369 AMPLIFIERS - LOW NOISE - CHIP v00.1007 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2.0 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 9DB11 chip 66 low noise amplifier mmic 137 PDF

    HMC-ALH369

    Abstract: No abstract text available
    Text: HMC-ALH369 v02.0209 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 PDF

    HMC-ALH369

    Abstract: No abstract text available
    Text: HMC-ALH369 v03.0709 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 HMCALH369 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC-ALH369 v01.1207 LOW NOISE AMPLIFIERS - CHIP 1 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH369 is ideal for: Excellent Noise Figure: 2 dB • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios


    Original     		HMC-ALH369 HMC-ALH369 PDF

    low noise, hetero junction fet

    Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		NE32500, NE27200 NE32500 NE27200 NE32500 low noise, hetero junction fet high frequency transistor ga as fet s11 diode shottky nec, hetero junction transistor GA 88 KA 88 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC462 v01.0907 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT


    Original     		HMC462 HMC462 025mm PDF

    HMC392

    Abstract: ps3 schematic
    Text: HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392 is ideal for: Gain: 15.5 dB • Point-to-Point Radios Noise Figure: 2.4 dB • VSAT Single Supply Voltage: +5V 50 Ohm Matched Input/Output


    Original     		HMC392 HMC392 025mm ps3 schematic PDF

    HMC462

    Abstract: HMC463
    Text: HMC462 v02.0708 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT


    Original     		HMC462 HMC462 025mm HMC463 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392 is ideal for: Gain: 15.5 dB • Point-to-Point Radios Noise Figure: 2.4 dB • VSAT Single Supply Voltage: +5 V 50 Ohm Matched Input/Output


    Original     		HMC392 HMC392 025mm PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages


    OCR Scan     		MA4T243 MA4T24300 PDF

    B52 transistor

    Abstract: No abstract text available
    Text: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz


    OCR Scan     		AT-42000 AT-42000 44475AM 0017b54 B52 transistor PDF

    AT-42000

    Abstract: 42000
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications


    OCR Scan     		AT-42000 AT-42000 nitride44 Rn/50 42000 PDF

    transistor 86 y 87

    Abstract: eic 57 210 17bs2 AT-42000 AT-42000-GP4 pj 68 S2a
    Text: « Thai minM HP AECWKLAERTDT Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High O utput Power: 21.0 dBm Typical Pj dB at 2.0 GHz m ixer and oscillator applications


    OCR Scan     		AT-42000 AT-42000 KM/50 44475aii ooi7b53 0017b54 transistor 86 y 87 eic 57 210 17bs2 AT-42000-GP4 pj 68 S2a PDF

    Untitled

    Abstract: No abstract text available
    Text: O avantek MGA-62100 Low Noise GaAs MMIC Amplifier Avantek Chip Outline Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz


    OCR Scan     		MGA-62100 MGA-62100 310-371-87l7or310-371-8478 PDF

    Untitled

    Abstract: No abstract text available
    Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • SUPER LOW NOISE FIGURE: 0.45 d B T Y P a t 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm


    OCR Scan     		NE27200 NE27200 IS12I IS11Ia IS12S21I PDF

    1A12 nec

    Abstract: No abstract text available
    Text: | \ | E C C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP FEATURES_ NE32500 OUTLINE DIMENSIONS Units in |im • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm


    OCR Scan     		NE32500 E32500 1A12 nec PDF