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    Text: |\|EC SUPER LOW NOISE C TO KA BAND AMPLIFIER NE27200 N-CHANNEL HJ FET CHIP FEATURES_ OUTLINE DIMENSIONS Units in nm • SUPER LOW NOISE FIGURE: 0.45 d B T Y P a t 12 GHz CHIP • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: Lg = 0.20 nm


    OCR Scan     		PDF NE27200 NE27200 IS12I IS11Ia IS12S21I