CI 116H Search Results

CI 116H Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LM5116HJD	PCB Footprint and Symbol	Texas Instruments	80V High Temperature Wide Range Synchronous Buck Controller 20-CDIP SB -55 to 175

CI 116H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
laf 0001 Abstract: ic laf 0001 laf 0001 power 0158h testing motherboards using multi meter 10BASE2 10BASE5 CDK8920A CS8920 CS8920A Contextual Info: CS8920A Advanced Product Databook &U\VWDO /$1TM ISA FEATURES Plug-and-Play Ethernet Controller • Single-Chip IEEE 802.3 Ethernet Controller with Direct ISA-Bus Interface ■ Implements Industry-Standard Plug and Play ■ Full Duplex Operation DESCRIPTION	Original	CS8920A 10BASE-T 10BASE2, 10BASE5 10BASE-F 0144h) 0146h) CS8920A DS238PP2 laf 0001 ic laf 0001 laf 0001 power 0158h testing motherboards using multi meter 10BASE2 CDK8920A CS8920	PDF
3G3JV-AB007 Abstract: 3G3JV-AB004 3G3JV-AB015 3G3JV-A4007 3G3JV-A2007 3G3JV-A4004 A4040 3G3JV-AB007 fr 3g3jv inverter 3G3JV-AB002 Contextual Info: Falownik 3G3JV Wiadomoœci ogólne Falownik 3G3JV jest miniaturowym przetwornikiem czêstotliwoœci z szerokimi mo¿liwoœciami parametryzacji przez u¿ytkownika. Unikalne rozwi¹zanie sekcji zasilaj¹cej powoduje, ¿e wymiary falownika zosta³y ograniczone do minimum.	Original	RS422A, 3G3JV-AB007 3G3JV-AB004 3G3JV-AB015 3G3JV-A4007 3G3JV-A2007 3G3JV-A4004 A4040 3G3JV-AB007 fr 3g3jv inverter 3G3JV-AB002	PDF
laf 0001 Abstract: ic laf 0001 laf 0001 power center tap transformer 10BASE2 10BASE5 10BASET CDK8920 CS8920 CS8920-CQ Contextual Info: CS8920 ISA Plug-and-Play Ethernet Controller Features Description • Single-Chip IEEE 802.3 Ethernet Controller with • • • • • • • • • • • • Direct ISA-Bus Interface Implements Industry-Standard Plug and Play Full Duplex Operation	Original	CS8920 10BASE-T 10BASE2, 10BASE5 10BASE-F 0144h) 0146h) CS8920 DS150PP1 laf 0001 ic laf 0001 laf 0001 power center tap transformer 10BASE2 10BASET CDK8920 CS8920-CQ	PDF
M58LT128HSB Abstract: CR10 M58LT128HST Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HST M58LT128HSB TBGA64 M58LT128HSB CR10 M58LT128HST	PDF
CR10 Abstract: M58LT128HSB M58LT128HST Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HST M58LT128HSB 128-Mbit TBGA64 CR10 M58LT128HSB M58LT128HST	PDF
Contextual Info: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128KST M58LT128KSB	PDF
CR10 Abstract: M58LT256JSB M58LT256JST Contextual Info: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LT256JST M58LT256JSB TBGA64 CR10 M58LT256JSB M58LT256JST	PDF
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HST M58LT128HSB TBGA64 M58LT128HSB8ZA6 M58LT128HSB8ZA6E \TEMP\SGST\M58LT128HSB8ZA6 20-Aug-2007	PDF
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HST M58LT128HSB M58LT128HST8ZA6 M58LT128HST8ZA6E	PDF
CR10 Abstract: M58LT128HSB M58LT128HST Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HST M58LT128HSB TBGA64 CR10 M58LT128HSB M58LT128HST	PDF
Contextual Info: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M30L0R8000T2 M30L0R8000B2	PDF
Contextual Info: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT256JST M58LT256JSB	PDF
Contextual Info: M30L0T8000T2 M30L0T8000B2 256 Mbit 16 Mb x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M30L0T8000T2 M30L0T8000B2	PDF
M58LT256KST Abstract: M58LT256KSB Contextual Info: M58LT256KST M58LT256KSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT256KST M58LT256KSB M58LT256KSB	PDF

M58LT256JSB Abstract: CR10 M58LT256JST M58LT256JSB8 Contextual Info: M58LT256JST M58LT256JSB 256 Mbit 16 Mb x 16, multiple bank, multilevel, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT256JST M58LT256JSB TBGA64 M58LT256JSB CR10 M58LT256JST M58LT256JSB8	PDF
M58LR128HC Abstract: M58LR128HD VFBGA44 CR10 882F Contextual Info: M58LR128HC M58LR128HD 128 Mbit x16, Mux I/O, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LR128HC M58LR128HD VFBGA44 M58LR128HC M58LR128HD VFBGA44 CR10 882F	PDF
M58LRxxxKC Contextual Info: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers	Original	M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LRxxxKC	PDF
CR10 Abstract: 4047N Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)	Original	M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N	PDF
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB	PDF
CR10 Abstract: M58LR128HB M58LR128HT VFBGA56 Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56	PDF
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB	PDF
BP 109 Abstract: CR10 M58LR128HB M58LR128HT VFBGA56 Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB BP 109 CR10 M58LR128HB M58LR128HT VFBGA56	PDF
Contextual Info: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program	Original	M58LR128HT M58LR128HB M58LR128HB85ZB5F M58LR128HB	PDF
M58LT128HB Abstract: M58LT128HT CR10 VFBGA56 026h Contextual Info: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program	Original	M58LT128HT M58LT128HB VFBGA56 M58LT128HB M58LT128HT CR10 VFBGA56 026h	PDF

CI 116H Search Results

CI 116H Result Highlights (1)

CI 116H Datasheets Context Search

laf 0001

3G3JV-AB007

laf 0001

M58LT128HSB

CR10

CR10

CR10

M58LT256KST

M58LT256JSB

M58LR128HC

M58LRxxxKC

CR10

CR10

BP 109

M58LT128HB

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