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    VFBGA44

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit VFBGA44 M58WR016KL M58WR032KL ADQ12

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F

    s1l50552

    Abstract: encounter conformal equivalence check user guide circuit diagram of mini ips system S1L50062 RTC SL 5500 S1K-7 S1X65263 512M x 8 Bit NAND Flash Memory BGA and QFP Package epson lq 300
    Text: ASIC Gate Array / Embedded Array / Standard Cell 2007/4- SEIKO EPSON CORPORATION Our goal is to be a true partner that strategically contributes to your product development through our concept of "saving technologies" that save power, time, and space. Gate Array / Embedded Array / Standard Cell


    Original     		PDF S1L60843F00A000 ARM720T: s1l50552 encounter conformal equivalence check user guide circuit diagram of mini ips system S1L50062 RTC SL 5500 S1K-7 S1X65263 512M x 8 Bit NAND Flash Memory BGA and QFP Package epson lq 300

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		PDF M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44

    CR14

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit CR14 M58WR032KU VFBGA44 MS-328

    M58LR128HC

    Abstract: M58LR128HD VFBGA44 CR10 882F
    Text: M58LR128HC M58LR128HD 128 Mbit x16, Mux I/O, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HC M58LR128HD VFBGA44 M58LR128HC M58LR128HD VFBGA44 CR10 882F

    M58LRxxxKC

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LRxxxKC

    882F

    Abstract: L70110
    Text: M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit x16, Mux I/O, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 256Mbit 66MHz M58LR128GU/L) M58LR256GU/L) 882F L70110

    ADQ14

    Abstract: M58WR032KU M58WRxxxKU
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit M58WR016KL70ZA6E ADQ14 M58WRxxxKU

    M58LR256K

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LR256K

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KU70ZA6U M58WR064K

    M58LR128GL

    Abstract: M58LR128GU M58LR256GL M58LR256GU VFBGA44 882F
    Text: M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit x16, Mux I/O, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 256Mbit 66MHz M58LR128GU/L) M58LR256GU/L) M58LR128GL M58LR128GU M58LR256GL M58LR256GU VFBGA44 882F

    M58WR064HUL

    Abstract: 04MAY2006
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)


    Original     		PDF M58WR064HU M58WR064HL M58WR064HUL 04MAY2006

    M58WR064KU

    Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit 88C0 CR14 M58WR032KU VFBGA44 M58WR064KL